Browsing by Subject "Semiconducting silicon"
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Item Open Access Chemically specific dynamic characterization of photovoltaic and photoconductivity effects of surface nanostructures(American Chemical Society, 2010) Ekiz, O. Ö.; Mizrak, K.; Dâna, A.We report characterization of photovoltaic and photoconductivity effects on nanostructured surfaces through light induced changes in the X-ray photoelectron spectra (XPS). The technique combines the chemical specificity of XPS and the power of surface photovoltage spectroscopy (SPV), with the addition of the ability to characterize photoconductivity under both static and dynamic optical excitation. A theoretical model that quantitatively describes the features of the observed spectra is presented. We demonstrate the applicability of the model on a multitude of sample systems, including homo- and heterojunction solar cells, CdS nanoparticles on metallic or semiconducting substrates, and carbon nanotube films on silicon substrates.Item Open Access Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films(A I P Publishing LLC, 2015) Altuntas, H.; Ozgit Akgun, C.; Donmez, I.; Bıyıklı, NecmiHere, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.Item Open Access Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide(Springer New York LLC, 2015) El-Atab, N.; Turgut, B. B.; Okyay, Ali Kemal; Nayfeh, M.; Nayfeh, A.In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The results show that graphene nanoplatelets with Al2O3/HfO2 tunnel oxide allow for larger memory windows at the same operating voltages, enhanced retention, and endurance characteristics. The measurements are further confirmed by plotting the energy band diagram of the structures, calculating the quantum tunneling probabilities, and analyzing the charge transport mechanism. Also, the required program time of the memory with ultra-thin asymmetric Al2O3/HfO2 tunnel oxide with graphene nanoplatelets storage layer is calculated under Fowler-Nordheim tunneling regime and found to be 4.1 ns making it the fastest fully programmed MOS memory due to the observed pure electrons storage in the graphene nanoplatelets. With Si nanoparticles, however, the program time is larger due to the mixed charge storage. The results confirm that band-engineering of both tunnel oxide and charge trapping layer is required to enhance the current non-volatile memory characteristics.Item Open Access Experimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantation(IOP, 2008) Wainstein, D.; Kovalev, A.; Tetelbaum, D.; Mikhailov, A.; Bulutay, Ceyhun; Aydınlı, AtillaThe semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si nanocrystals in sapphire matrix were formed by Si+ ion implantation with doses from 5×1016 to 3×1017 cm -2 at an accelerating voltage 100 kV and post-implantation annealing at 500-1100 d̀C for 2 hours. Depth distribution of lattice defects, impurities and Si nanocrystals, the peculiarities of interband electronic transitions were investigated by XPS and HREELS. The molecular orbitals and local electronic structure of the Al2O3 matrix with Si nanocrystals was calculated using an atomistic pseudopotential technique. The electronic structure of Si nanocrystals as determined from HREELS measurements is in good agreement with the theoretically calculated electronic structure for Si nanocrystals.Item Open Access Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure(Wiley-VCH Verlag, 2015) El-Atab, N.; Rizk, A.; Tekcan, B.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A.A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al2O3 layer and a sputtered SiO2 layer. A memory effect due to charging of the Si nanoparticles is observed using high frequency C-V measurements. The shift of the threshold voltage obtained from the hysteresis measurements is around 3.3V at 10/-10V gate voltage sweeping. The analysis of the energy band diagram of the memory structure and the negative shift of the programmed C-V curve indicate that holes are tunneling from p-type Si via Fowler-Nordheim tunneling and are being trapped in the Si nanoparticles. In addition, the structures show good endurance characteristic (>105program/erase cycles) and long retention time (>10 years), which make them promising for applications in non-volatile memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Item Open Access Microcavity enhanced amorphous silicon photoluminescence(IEEE, 1997) Serpengüzel, Ali; Aydınlı, Atilla; Bek, AlpanA microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk a-Si:H. According to the model, small a-Si clusters are in a matrix of a-Si:H. The regions with Si-H, having larger energy gaps due to strong Si-H bonds, isolate these clusters, and form barrier regions around them. The PL originates from these a-Si clusters.Item Open Access A new directional acoustic lens: V-groove lens(IEEE, 1993) Bozkurt, Ayhan; Yaralıoğlu, G. Göksenin; Atalar, Abdullah; Köymen, HayrettinA new directional acoustic lens is introduced. The geometry is very similar to the line-focus lens except the lens cavity, which is shaped as a groove with flat-bottom V cross section. The slanted planar edges of the groove are inclined in order to generate waves incident on the object surface at a critical angle. Hence, the edges of the groove act like two wedge transducers facing each other. The cross section of the lens is the same as that of the Lamb Wave Lens. Therefore, it enjoys the same sensitivity to surface wave excitations. On the other hand, since the cross section remains the same along one of the lateral directions, it has directional properties very similar to that of the Line Focus Beam Lens. The waves normally incident on the object surface generated from the flat-bottom, interfere with those at the critical angle, giving rise to a V(Z) effect. Calculated responses of the lens are presented for silicon (001) surface as a function of crystal orientation. The calculated curves are compared with measurement results. The leaky wave velocities are extracted from the measurement results using the conventional FFT algorithm. A new model based algorithm is proposed for extracting the velocity information from V(Z) data.Item Open Access Optically implemented broadband blueshift switch in the terahertz regime(American Physical Society, 2011-01-18) Shen, N. H.; Massaouti, M.; Gokkavas, M.; Manceau J. M.; Özbay, Ekmel; Kafesaki, M.; Koschny, T.; Tzortzakis, S.; Soukoulis, C. M.We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.Item Open Access Practical multi-featured perfect absorber utilizing high conductivity silicon(Institute of Physics Publishing, 2016) Gok, A.; Yilmaz, M.; Bıyıklı, N.; Topallı, K.; Okyay, Ali KemalWe designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth as high as 2.5 μm is demonstrated. We used a silicon-on-insulator (SOI) wafer which consists of n-type silicon (Si) device layer, silicon dioxide (SiO2) as buried oxide layer, and n-type Si handle layer. The center wavelength and bandwidth can be tuned by adjusting the conductivity of the Si device and handle layers as well as the thicknesses of the device and buried oxide layers. We demonstrate proof-of-concept absorber surfaces experimentally. Such absorber surfaces are easy to microfabricate because the absorbers do not require elaborate microfabrication steps such as patterning. Due to the structural simplicity, low-cost fabrication, wide spectrum range of operation, and band properties of the perfect absorber, the proposed multi-featured perfect absorber surfaces are promising for many applications. These include sensing devices, surface enhanced infrared absorption applications, solar cells, meta-materials, frequency selective sensors and modulators. © 2016 IOP Publishing Ltd.Item Open Access Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC(TÜBİTAK, 2006) Bulutay, CeyhunThe k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a detailed formulation is provided where the associated k · p parameters are extracted from the local empirical pseudopotential method in the form of band edge energies and generalized momentum matrix elements. We demonstrate the systematic improvement of the technique with the proper choice of the band edge states for the group-IV indirect bandgap semiconductors: Si, Ge, diamond and SiC of the 30 cubic phase. The full zone agreement is observed to span an energy window of more than 20 eV for Si, and 40 eV for the diamond with the 15-band pseudopotential-based k · p approach. © TÜBİTAK.Item Open Access Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H(Pergamon Press, 1994) Compaan, A.; Savage, M. E.; Aydınlı, Atilla; Azfar, T.We have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows that recrystallization begins with the first laser pulse but the multiple pulses are needed to generate the highest hole concentrations of ∼6×1020 cm-3. In boron-doped a-Si:H the electron concentration reaches ∼1×1021 cm-3 after laser anneal which produces a dip rather than a peak near the phonon line as a consequence of a negative Fano-interference parameter, q. The results show that Raman scattering can be used to obtain carrier concentrations in poly-silicon provided that wavelength-dependent Fano interference effects are properly included. © 1994.Item Open Access Simultaneous non-contact atomic force microscopy (nc-AFM)/STM imaging and force spectroscopy of Si(1 0 0)(2 × 1) with small oscillation amplitudes(Elsevier Science B.V., 2002) Özer, H. Ö.; Atabak, M.; Ellialtoğlu, R. M.; Oral, A.Si(1 0 0)(2 × 1) surface is imaged using a new non-contact atomic force microscopy (nc-AFM)/STM with sub-Ångström oscillation amplitudes using stiff tungsten levers. Simultaneous force gradient and STM images of individual dimers and atomic scale defects are obtained. We measured force-distance (f-d) curves with different tips. Some of the tips show long force interactions, whereas some others resolve short-range interatomic force interactions. We observed that the tips showing short-range force interaction give atomic resolution in force gradient scans. This result suggests that short-range force interactions are responsible for atomic resolution in nc-AFM.Item Open Access Ultra-low-cost near-infrared photodetectors on silicon(SPIE, 2015-02) Nazirzadeh, M. Amin; Atar, Fatih B.; Turgut, B. Berkan; Okyay, Ali KemalWe demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that form Schottky contact with Silicon. NIR photons excite plasmon resonances at metal nanoislands and plasmons decay into highly energetic charge carriers (hot electrons). These hot electrons get injected into Silicon (internal photoemission), resulting in photocurrent. Several groups have studied plasmonic nanoantennas using high resolution lithography techniques. In this work, we make use of randomly formed nanoislands for broad-band photoresponse at NIR wavelengths. We observe photoresponse up to 2000 nm wavelength with low dark current density about 50 pA/μm2. The devices exhibit photoresponsivity values as high as 2 mA/W and 600 μA/W at 1.3 μm and 1.55 μm wavelengths, respectively. Thin metal layer was deposited on low-doped n-type Silicon wafer. Rapid thermal annealing results in surface reconstruction of the metal layer into nanoislands. Annealing conditions control the average size of the nanoislands and photoresponse of the devices. An Al-doped Zinc Oxide (AZO) layer was deposited on the nanoislands using thermal atomic layer deposition (ALD) technique to acts as a transparent conductive oxide (TCO) and patterned using photolithography. AZO film creates electrical connection between the nanoislands and also makes a heterojunction to Silicon. Simple and scalable fabrication on Si substrates without the need for any sub-micron lithography or high temperature epitaxy process make these devices good candidates for ultra-low-cost broad-band NIR imaging and spectroscopy applications. © 2015 SPIE.Item Open Access Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition(Pergamon Press, 1995) Timofeev, F. N.; Aydınlı, Atilla; Ellialtioglu, R.; Turkoglu, K.; Gure, M.; Mikhailov, V. N.; Lavrova, O. A.a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the films have been found to depend on initial stoichiometry of the films. © 1995.