Microcavity enhanced amorphous silicon photoluminescence

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Microcavity enhanced amorphous silicon photoluminescence.pdf (169.87 KB)

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1997

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Abstract

A microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk a-Si:H. According to the model, small a-Si clusters are in a matrix of a-Si:H. The regions with Si-H, having larger energy gaps due to strong Si-H bonds, isolate these clusters, and form barrier regions around them. The PL originates from these a-Si clusters.

Source Title

Proceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1997

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IEEE

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Keywords

Cavity resonators, Chemical bonds, Chemical vapor deposition, Energy gap, Gold, Mathematical models, Photoluminescence, Plasma applications, Quantum theory, Semiconducting silicon, Plasma enhanced chemical vapor deposition (PECVD), Quantum confinement model, Amorphous silicon

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http://hdl.handle.net/11693/27689

Published Version (Please cite this version)

https://doi.org/10.1109/LEOS.1997.630606

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Scholarly Publications - Physics

Language

English

Type

Conference Paper