Microcavity enhanced amorphous silicon photoluminescence

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Microcavity enhanced amorphous silicon photoluminescence.pdf (169.87 KB)

Date

1997

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Source Title

Proceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1997

Print ISSN

1092-8081

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IEEE

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Pages

243 - 244

Language

English

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Conference Paper

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Abstract

A microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk a-Si:H. According to the model, small a-Si clusters are in a matrix of a-Si:H. The regions with Si-H, having larger energy gaps due to strong Si-H bonds, isolate these clusters, and form barrier regions around them. The PL originates from these a-Si clusters.

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Keywords

Cavity resonators , Chemical bonds , Chemical vapor deposition , Energy gap , Gold , Mathematical models , Photoluminescence , Plasma applications , Quantum theory , Semiconducting silicon , Plasma enhanced chemical vapor deposition (PECVD) , Quantum confinement model , Amorphous silicon

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http://hdl.handle.net/11693/27689

Published Version (Please cite this version)

https://doi.org/10.1109/LEOS.1997.630606

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Scholarly Publications - Physics