Microcavity enhanced amorphous silicon photoluminescence
Date
1997
Advisor
Instructor
Source Title
Proceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1997
Print ISSN
1092-8081
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
243 - 244
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract
A microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk a-Si:H. According to the model, small a-Si clusters are in a matrix of a-Si:H. The regions with Si-H, having larger energy gaps due to strong Si-H bonds, isolate these clusters, and form barrier regions around them. The PL originates from these a-Si clusters.
Course
Other identifiers
Book Title
Keywords
Cavity resonators, Chemical bonds, Chemical vapor deposition, Energy gap, Gold, Mathematical models, Photoluminescence, Plasma applications, Quantum theory, Semiconducting silicon, Plasma enhanced chemical vapor deposition (PECVD), Quantum confinement model, Amorphous silicon