Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure

Date
2015
Advisor
Instructor
Source Title
Physica Status Solidi (A) Applications and Materials Science
Print ISSN
1862-6300
Electronic ISSN
Publisher
Wiley-VCH Verlag
Volume
212
Issue
8
Pages
1751 - 1755
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al2O3 layer and a sputtered SiO2 layer. A memory effect due to charging of the Si nanoparticles is observed using high frequency C-V measurements. The shift of the threshold voltage obtained from the hysteresis measurements is around 3.3V at 10/-10V gate voltage sweeping. The analysis of the energy band diagram of the memory structure and the negative shift of the programmed C-V curve indicate that holes are tunneling from p-type Si via Fowler-Nordheim tunneling and are being trapped in the Si nanoparticles. In addition, the structures show good endurance characteristic (>105program/erase cycles) and long retention time (>10 years), which make them promising for applications in non-volatile memory devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Other identifiers
Book Title
Keywords
Aluminum, Application programs, Atomic layer deposition, C (programming language), Charge trapping, Data storage equipment, Digital storage, Flash memory, Metal nanoparticles, MOS devices, Nanoparticles, Semiconducting silicon, Semiconductor lasers, Silicon, Silicon oxides, Synthesis (chemical), Threshold voltage, Atomic layer deposited, Charge trapping memory, Hysteresis measurements, Laser process, Metal Oxide Semiconductor structure, Nonvolatile memory devices, Silicon nanoparticles, Synthesized solution, Crystal atomic structure
Citation
Published Version (Please cite this version)