Experimental and theoretical investigations of electronic and atomic structure of Si-nanocrystals formed in sapphire by ion implantation

Date
2008
Advisor
Instructor
Source Title
Journal of Physics: Conference Series
Print ISSN
1742-6588
Electronic ISSN
Publisher
IOP
Volume
100
Issue
7
Pages
1 - 4
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

The semiconductor nanocomposites based on Si nanocrystals in dielectric matrices attract a great amount of attention due to their ability for luminescence in visible and near-IR part of the electromagnetic spectrum. Si nanocrystals in sapphire matrix were formed by Si+ ion implantation with doses from 5×1016 to 3×1017 cm -2 at an accelerating voltage 100 kV and post-implantation annealing at 500-1100 d̀C for 2 hours. Depth distribution of lattice defects, impurities and Si nanocrystals, the peculiarities of interband electronic transitions were investigated by XPS and HREELS. The molecular orbitals and local electronic structure of the Al2O3 matrix with Si nanocrystals was calculated using an atomistic pseudopotential technique. The electronic structure of Si nanocrystals as determined from HREELS measurements is in good agreement with the theoretically calculated electronic structure for Si nanocrystals.

Course
Other identifiers
Book Title
Keywords
Accelerating voltages, Atomic structure, Depth distribution, Dielectric matrixes, Electromagnetic spectra, Electronic transition, Interband, Lattice defects, Local electronic structures, Matrix, Postimplantation annealing, Pseudo-potential techniques, Semiconductor nanocomposite, Si nanocrystal, Theoretical investigations, Chemical bonds, Crystal atomic structure, Electronic properties, Electronic structure, Ion implantation, Molecular orbitals, Sapphire, Semiconducting silicon, Semiconducting silicon compounds, Nanocrystals
Citation
Published Version (Please cite this version)