Browsing by Subject "Photoluminescence"

Now showing 1 - 20 of 68

Open Access
Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures
(2010) Bengi, A.; Lisesivdin, S.B.; Kasap, M.; Mammadov, T.; Ozcelik, S.; Özbay, Ekmel
The optical transitions in AlGaN/GaN heterostructures that are grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in detail by using Hall and room temperature (RT) photoluminescence (PL) measurements. The Hall measurements show that there is two-dimensional electron gas (2DEG) conduction at the AlGaN/GaN heterointerface. PL measurements show that in addition to the characteristic near-band edge (BE) transition, there are blue (BL) and yellow luminescence (YL) bands, free-exciton transition (FE), and a neighboring emission band (NEB). To analyze these transitions in detail, the PL measurements were taken under bias where the applied electric field changed from 0 to 50 V/cm. Due to the applied electric field, band bending occurs and NEB separates into two different peaks as an ultraviolet luminescence (UVL) and Y4 band. Among these bands, only the yellow band is unaffected with the applied electric field. The luminescence intensity change of these bands with an electric field is investigated in detail. As a result, the most probable candidate of the intensity decrease with an increasing electric field is the reduction in the radiative lifetime. © 2010 Elsevier Ltd. All rights reserved.
Open Access
Brightly luminescent Cu-Zn-In-S/ZnS Core/shell quantum dots in salt matrices
(De Gruyter, 2019) Lox, J. F. L.; Eichler, F.; Erdem, Talha; Adam, M.; Gaponik, N.; Demir, Hilmi Volkan; Lesnyak, V.; Eychmüller, A.
In the past decades cadmium-free quantum dots (QDs), among which are quaternary colloidal Cu-Zn-In-S/ZnS (CZIS/ZnS) core/shell nanocrystals (NCs), have attracted great scientific interest. Particularly, their low toxicity and the possibility to tune their photoluminescence (PL) properties by varying the composition in the multicomponent system make them highly attractive for applications in light-emitting diodes (LEDs). Thus, the demands for high quality CZIS/ZnS QDs and methods to process them into bulk materials stimulate investigations of these nanomaterials. Herein, we demonstrate the synthesis of CZIS/ZnS core/shell NCs via a surfactant induced nucleation process, which emit in various colors covering the range from 520 nm to 620 nm possessing high photoluminescence quantum yields (PLQYs) up to 47%. Furthermore, the as synthesized NCs were successfully integrated into two different salt matrices [Na2B4O7 (Borax) and LiCl] using two different approaches. The commonly used incorporation of the NCs into Borax salt led to salt crystals emitting from 540 nm to 600 nm with PLQYs up to 24%. By encapsulating the QDs into LiCl, brightly emitting NCs-in-LiCl powders with the PL covering a range from 520 nm to 650 nm with PLQYs of up to 14% were obtained. As a proof of concept, the fabrication of a color conversion LED using NCs encapsulated into LiCl demonstrated the applicability of the encapsulated NCs.
Open Access
CdSe/CdSe1-xTex core/crown heteronanoplatelets: tuning the excitonic properties without changing the thickness
(American Chemical Society, 2017) Kelestemur Y.; Guzelturk, B.; Erdem, O.; Olutas M.; Erdem, T.; Usanmaz, C. F.; Gungor K.; Demir, Hilmi Volkan
Here we designed and synthesized CdSe/CdSe1-xTex core/crown nanoplatelets (NPLs) with controlled crown compositions by using the core-seeded-growth approach. We confirmed the uniform growth of the crown regions with well-defined shape and compositions by employing transmission electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. By precisely tuning the composition of the CdSe1-xTex crown region from pure CdTe (x = 1.00) to almost pure CdSe doped with several Te atoms (x = 0.02), we achieved tunable excitonic properties without changing the thickness of the NPLs and demonstrated the evolution of type-II electronic structure. Upon increasing the Te concentration in the crown region, we obtained continuously tunable photoluminescence peaks within the range of ∼570 nm (for CdSe1-xTex crown with x = 0.02) and ∼660 nm (for CdSe1-xTex crown with x = 1.00). Furthermore, with the formation of the CdSe1-xTex crown region, we observed substantially improved photoluminescence quantum yields (up to ∼95%) owing to the suppression of nonradiative hole trap sites. Also, we found significantly increased fluorescence lifetimes from ∼49 up to ∼326 ns with increasing Te content in the crown, suggesting the transition from quasi-type-II to type-II electronic structure. With their tunable excitonic properties, this novel material presented here will find ubiquitous use in various efficient light-emitting and -harvesting applications.
Open Access
Colloidal nanoplatelet/conducting polymer hybrids: excitonic and material properties
(American Chemical Society, 2016) Guzelturk, B.; Menk, F.; Philipps, K.; Kelestemur Y.; Olutas M.; Zentel, R.; Demir, Hilmi Volkan
Here we present the first account of conductive polymer/colloidal nanoplatelet hybrids. For this, we developed DEH-PPV-based polymers with two different anchor groups (sulfide and amine) acting as surfactants for CdSe nanoplatelets, which are atomically flat semiconductor nanocrystals. Hybridization of the polymers with the nanoplatelets in the solution phase was observed to cause strong photoluminescence quenching in both materials. Through steady-state photoluminescence and excitation spectrum measurements, photoluminescence quenching was shown to result from dominant exciton dissociation through charge transfer at the polymer/nanoplatelet interfaces that possess a staggered (i.e., type II) band alignment. Importantly, we found out that sulfide-based anchors enable a stronger emission quenching than amine-based ones, suggesting that the sulfide anchors exhibit more efficient binding to the nanoplatelet surfaces. Also, shorter surfactants were found to be more effective for exciton dissociation as compared to the longer ones. In addition, we show that nanoplatelets are homogeneously distributed in the hybrid films owing to the functional polymers. These nanocomposites can be used as building blocks for hybrid optoelectronic devices, such as solar cells.
Open Access
Controlling the photoluminescence of quantum emitters in hexagonal boron nitride by external magnetic fields
(IOP Publishing, 2022-10-28) Korkut, Hilal; Sarpkaya, İbrahim
The recent observation of room temperature spin-dependent photoluminescence (PL) emission from hexagonal boron nitride's (h-BN's) defect centers motivates for performing a complementary low-temperature photophysical study of quantum emitters under relatively high magnetic fields. Here, we investigate the PL emission dynamics of h-BN's visible single-photon emitters under an applied out-of-plane magnetic field at cryogenic temperatures. The PL intensity of the emitters in our work strikingly exhibits strong magnetic field dependence and decreases with the increased magnetic field. A substantial decrease in the integrated PL intensity of the emitters by up to one order of magnitude was observed when the applied field is increased from 0 T to 7 T. The observed reversible photodarkening of PL emission due to the applied magnetic field is in very well agreement with the predictions of a recent joint experimental and theoretical study and can happen only if the spin-selective, non-radiative, and asymmetric intersystem crossing transitions proceed from the triplet excited state to the lowest-lying spin-singlet metastable state and from the metastable state to the triplet ground state. Our results not only shed more light on the light emission paths of defect centers in h-BN but also show the use of the magnetic field as an efficient control knob in the development of magneto-optical devices.
Open Access
CVD grown 2D MoS2 layers: a photoluminescence and fluorescence lifetime imaging study
(Wiley-VCH Verlag, 2016) Özden, A.; Şar, H.; Yeltik A.; Madenoğlu, B.; Sevik, C.; Ay, F.; Perkgöz, N. K.
In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS2. µ-Raman, µ-photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) are utilized to probe the fluorescence lifetime and photoluminescence properties of individual flakes of MoS2 films. Usage of these three techniques allows identification of the grown layers, grain boundaries, structural defects and their relative effects on the PL and fluorescence lifetime spectra. Our investigation on individual monolayer flakes reveals a clear increase of the fluorescence lifetime from 0.3 ns to 0.45 ns at the edges with respect to interior region. On the other hand, investigation of the film layer reveals quenching of PL intensity and lifetime at the grain boundaries. These results could be important for applications where the activity of edges is important such as in photocatalytic water splitting. Finally, it has been demonstrated that PL mapping and FLIM are viable techniques for the investigation of the grain-boundaries. (Figure presented.). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Open Access
Defect luminescence in undoped p-type GaSe
(Taylor & Francis, 2001) Aydınlı, Atilla; Gasanly, N. M.; Gökşen, K.
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T = 10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Embargo
Demystifying trion emission in cdse nanoplatelets
(American Chemical Society, 2024-08-19) Riesner, Maurizio; Shabani, Farzan; Van Emmichoven, Levin Zeylmans; Klein, Julian; Delikanlı, Savaş; Fainblat, Rachel; Demir, Hilmi Volkan; Bacher, Gerd
At cryogenic temperatures, the photoluminescence spectrum of CdSe nanoplatelets (NPLs) usually consists of multiple emission lines, the origin of which is still under debate. While there seems to be consensus that both neutral excitons and trions contribute to the NPL emission, the prominent role of trions is rather puzzling. In this work, we demonstrate that Förster resonant energy transfer in stacks of NPLs combined with hole trap states in specific NPLs within the stack trigger trion formation, while single NPL spectra are dominated by neutral excitonic emission. This interpretation is verified by implementing copper (Cu+) dopants into the lattice as intentional hole traps. Trion emission gets strongly enhanced, and due to the large amount of hole trapping Cu+ states in each single NPL, trion formation does not necessarily require stacking of NPLs. Thus, the ratio between trion and neutral exciton emission can be controlled by either changing the amount of stacked NPLs during sample preparation or implementing copper dopants into the lattice which act as additional hole traps.
Open Access
Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity
(Pergamon Press, 1998) Gasanly, N. M.; Serpengüzel, A.; Gürlü, O.; Aydınlı, A.; Yılmaz, I.
The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. © 1998 Elsevier Science Ltd. All rights reserved.
Open Access
Does the donor-acceptor concept work for designing synthetic metals? 1. theoretical investigation of poly(3-cyano-3′-hydroxybithiophene)
(American Chemical Society, 2002) Salzner, U.
Homo- and copolymers of hydroxythiophene and cyanothiophene have been investigated by employing density functional theory with the aim of determining the effect of donor-acceptor substitution on the electronic structure. The band gap of the copolymer is 0.11 eV smaller than that of polythiophene. Bandwidths of valence and conduction bands are reduced by 0.22 and 0.36 eV compared to polybithiophene. Conductivity after p- and n-doping could therefore be less than that of polythiophene. All properties of the copolymer are averages between those of the homopolymers. The charge separation between hydroxy- and cyano-substituted rings is 0.12 e in the neutral state and 0.13 e and the dication. The ionization potential and electron affinity of poly(hydroxythiophene) are 1.78 and 1.63 eV smaller than those of poly(cyanothiophene). According to the donor-acceptor concept, a decrease in band gap and an increase in bandwidths compared to the homopolymers should have resulted: We rationalize the absence of band broadening with reduced interaction between fragments with very different energies in agreement with perturbation theory.
Open Access
Donor - acceptor pair recombination in Tl2InGaS4 layered crystals
(2005) Goksen, K.; Gasanly, N.M.; Ozkan H.; Aydınlı, Atilla
Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm-2. We observed a total of three PL bands, one centered at 542 nm (2.286 eV, A-band), one at 607 nm (2.041 eV, B-band), and one at 707 nm (1.754 eV, C-band), at various excitation intensities. The A- and the B-bands were determined to be due to radiative transitions from moderately deep donor levels located at 0.189 and 0.443 eV below the bottom of the conduction band to the shallow acceptor levels at 0.025 and 0.016 eV above the top of the valence band, respectively. The blue shift of the C-band peak energy and the quenching of the PL with increasing temperature are explained within the configuration coordinate model. The observation in the PL spectra of different emission bands in the sequence of B-, C- and A-bands at low, moderate, and high excitation laser intensities, respectively, are attributed to the shift of the quasi-Fermi level with increasing excitation intensity.
Open Access
Donor-acceptor pair recombination in AgIn5S8 single crystals
(American Institute of Physics, 1999-03-15) Gasanly, N. M.; Serpengüzel, A.; Aydınlı, Atilla; Gürlü, O.; Yilmaz, I.
Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band. (C) 1999 American Institute of Physics.
Open Access
Donor-acceptor pair recombination in gallium sulfide
(American Institute of Physics, 2000-12-15) Aydınlı, Atilla; Gasanly, N. M.; Goksen, K.
Low temperature photoluminescence of GaS single crystals shows three broad emission bands below 2.4 eV. Temperature and excitation light intensity dependencies of these bands reveal that all of them originate from close donor-acceptor pair recombination processes. Temperature dependence of the peak energies of two of these bands in the visible range follow, as expected, the band gap energy shift of GaS. However, the temperature dependence of the peak energy of the third band in the near infrared shows complex behavior by blueshifting at low temperatures followed by a redshift at intermediate temperatures and a second blueshift close to room temperature, which could only be explained via a configuration coordinate model. A simple model calculation indicates that the recombination centers are most likely located at the nearest neighbor lattice or interstitial sites. (C) 2000 American Institute of Physics. [S0021- 8979(00)04724-1].
Open Access
The effect of gadolinium doping on the structural, magnetic and photoluminescence properties of electrospun bismuth ferrite nanofibers
(Elsevier Ltd, 2015) George Philip G.; Senthamizhan, A.; Srinivasan Natarajan, T.; Chandrasekaran G.; Annal Therese H.
Gadolinium (Gd) doped Bismuth ferrite (BFO) nanofibers (Bi1-xGdxFeO3 (x=0.0, 0.05, 0.10, 0.15 and 0.20)) were synthesized via electrospinning. Scanning Electron Microscope (SEM) analysis showed that the diameter of the nanofibers ranged from 150 to 250 nm. X-Ray Diffraction (XRD) analysis revealed a structural phase transition with varying 'x', the compositions with x≤0.10 have crystal structures with space group R3c, while the compositions with x > 0.10 have crystal structures with space group Pnma. Vibrating Sample Magnetometer (VSM) analysis exhibited the weak ferromagnetic nature of the BFO nanofibers. However an increase in the saturated magnetic moment with increase in Gd dopant concentration was observed. The Photoluminescence (PL) spectra of the Bi:1-x :x nanofibers show enhanced Near Band Emission (NBE) intensity at x=0.10 due to the passivation of oxygen vacancies by Gd doping. © 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Open Access
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014) Cetđn, S.; Sağlam, S.; Ozcelđk, S.; Özbay, Ekmel
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples. ©2014 Gazi University Eti Mahallesi. All rights reserved.
Open Access
The effects of surface treatment on optical and vibrational properties of stain-etched silicon
(Pergamon Press, 1995) Kalem, Ş.; Göbelek, D.; Kurtar, R.; Mısırlı, Z.; Aydınlı, A.; Ellialtioǧlu, R.
The effects of surface treatment on optical and vibrational properties of porous silicon. (por-Si) layers grown on p-type Si wafers by electroless etching technique were studied by FTIR spectroscopy and photoluminescence (PL). The results indicate a correlatiora between the PL intensity and the strength of the absorption bands induced by mulltihydride complexes (SiHn, n ≥ 2). However, similar correlation was also established for monohydride species as evidenced from the layers containing no multihydrides. Furthermore, a new band is observed at 710 cm-1 and assigned to multihydrides suggesting a ne it, local bonding environment in these layers. © 1995.
Open Access
Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
(American Institute of Physics, 2009-05-29) Sari, E.; Nizamoglu, S.; Lee, I. H.; Baek, J. H.; Demir, Hilmi Volkan
Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.
Open Access
Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures
(SPIE, 2011) Jang L.-W.; Ju J.-W.; Jeon J.-W.; Jeon, D.-W.; Choi J.-H.; Lee, S.-J.; Jeon, S.-R.; Baek J.-H.; Sarı, Emre; Demir, Hilmi Volkan; Yoon H.-D.; Hwang, S.-M.; Lee I.-H.
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.
Open Access
Europium (II)-Doped Microporous Zeolite Derivatives with Enhanced Photoluminescence by Isolating Active Luminescence Centers
(American Chemical Society, 2011-10-21) Yang, X. Y.; Tiam, T. S.; Yu, X. B.; Demir, Hilmi Volkan; Sun, X. W.
Solid-state reaction is the most common method for preparing luminescent materials. However, the luminescent dopants in the hosts tend to aggregate in the high-temperature annealing process, which causes adverse effect in photoluminescence. Herein, we report a novel europium (II)-doped zeolite derivative prepared by a combined ion-exchange and solid-state reaction method, in which the europium (II) ions are isolated to a large extent by the micropores of the zeolite. Excited by a broad ultraviolet band from 250 to 420 nm, a strong blue emission peaking at 450 nm was observed for these Eu-embedded zeolites annealed at 800 degrees C in a reducing atmosphere. The zeolite host with pores of molecular dimension was found to be an excellent host to isolate and stabilize the Eu2+ ions. The as-obtained europium (II)-doped zeolite derivative showed an approximately 9 fold enhancement in blue emission compared to that of the general europium (111)-doped aluminosilicates obtained by conventional solid-state reaction, indicating that, by isolating active luminescence centers, it is promising to achieve highly luminescent materials. Also, the strong blue emission with broad UV excitation band suggests a potential candidate of phosphor for ultraviolet excited light-emitting diode.
Open Access
Full Visible Range Covering InP/ZnS Nanocrystals with High Photometric Performance and Their Application to White Quantum Dot Light-Emitting Diodes
(Wiley-VCH Verlag, 2012-04-30) Yang, X.; Zhao, D.; Leck K.S.; Tan S.T.; Tang, Y. X.; Zhao, J.; Demir, Hilmi Volkan; Sun, X. W.
High-quality InP/ZnS core–shell nanocrystals with luminescence tunable over the entire visible spectrum have been achieved by a facile one-pot solvothermal method. These nanocrystals exhibit high quantum yields (above 60%), wide emission spectrum tunability and excellent photostability. The FWHM can be as narrow as 38 nm, which is close to that of CdSe nanocrystals. Also, making use of these nanocrystals, we further demonstrated a cadmium-free white QD-LED with a high color rendering index of 91. The high-performance of the resulting InP/ZnS NCs coupled with their low intrinsic toxicity may further promote industrial applications of these NC emitters.