Defect luminescence in undoped p-type GaSe
Date
2001
Authors
Advisor
Instructor
Source Title
Philosophical Magazine Letters
Print ISSN
0950-0839
Electronic ISSN
1362-3036
Publisher
Taylor & Francis
Volume
81
Issue
12
Pages
859 - 867
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T = 10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Course
Other identifiers
Book Title
Keywords
Photoluminescence, Semiconducting gallium compounds, Spectrum analysis, Thermoanalysis, Excitation intensity, Wavelengths, Single crystals