Defect luminescence in undoped p-type GaSe
Date
2001
Authors
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
BUIR Usage Stats
3
views
views
29
downloads
downloads
Citation Stats
Series
Abstract
Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T = 10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
Source Title
Philosophical Magazine Letters
Publisher
Taylor & Francis
Course
Other identifiers
Book Title
Degree Discipline
Degree Level
Degree Name
Citation
Permalink
Published Version (Please cite this version)
Collections
Language
English