The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
Date
2014
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Source Title
Gazi University Journal of Science
Print ISSN
13039709
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Gazi University Eti Mahallesi
Volume
27
Issue
4
Pages
1105 - 1110
Language
English
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Abstract
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples. ©2014 Gazi University Eti Mahallesi. All rights reserved.
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High resolution X-ray diffraction, InGaN, Light emitting diode, Metalorganic chemical vapor deposition, Multi quantum well, Photoluminescence, Flow rate, Growth temperature, Indium, Light emitting diodes, Metallorganic chemical vapor deposition, Photoluminescence, Sapphire, Semiconducting aluminum compounds, X ray diffraction, X ray diffraction analysis, Emission wavelength, Growth conditions, High resolution X ray diffraction, InGaN, Low-pressure MOCVD, Multi quantum wells, Room-temperature photoluminescence, Sapphire substrates, Semiconductor quantum wells