Browsing by Subject "Low temperature effects"
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Item Open Access Density functional theory investigation of two-dimensional dipolar fermions in a harmonic trap(IOP, 2014) Üstünel, H.; Abedinpour, S. H.; Tanatar, BilalWe investigate the behavior of polarized dipolar fermions in a two-dimensional harmonic trap in the framework of the density functional theory (DFT) formalism using the local density approximation. We treat only a few particles interacting moderately. Important results were deduced concerning key characteristics of the system such as total energy and particle density. Our results indicate that, at variance with Coulombic systems, the exchange- correlation component was found to provide a large contribution to the total energy for a large range of interaction strengths and particle numbers. In addition, the density profiles of the dipoles are shown to display important features around the origin that is not possible to capture by earlier, simpler treatments of such systems.Item Open Access Drag effect in double-layer dipolar fermi gases(IOP, 2014) Tanatar, Bilal; Renklioğlu, Başak; Öktel, M. ÖzgürWe consider two parallel layers of two-dimensional spin-polarized dipolar Fermi gas without any tunneling between the layers. The effective interactions describing screening and correlation effects between the dipoles in a single layer (intra-layer) and across the layers (interlayer) are modeled within the Hubbard approximation. We calculate the rate of momentum transfer between the layers when the gas in one layer has a steady flow. The momentum transfer induces a steady flow in the second layer which is assumed initially at rest. This is the drag effect familiar from double-layer semiconductor and graphene structures. Our calculations show that the momentum relaxation time has temperature dependence similar to that in layers with charged particles which we think is related to the contributions from the collective modes of the system.Item Open Access Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures(IEEE, 2015) Bıyıklı, Necmi; Ozgit-Akgun, Çağla; Goldenberg, Eda; Haider, Ali; Kızır, Seda; Uyar, Tamer; Bolat, Sami; Tekcan, Burak; Okyay, Ali KemalHollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.Item Open Access Low-temperature phase transitions in TlGaS2 layer crystals(Pergamon Press, 1993) Aydınlı, Atilla; Ellialtioǧlu, R.; Allakhverdiev, K. R.; Ellialtioǧlu, S.; Gasanly, N. M.Polarized Raman scattering spectra of TlGaS2 layer crystals have been studied for the first time as a function of temperature between 8.5 and 295 K. No evidence for a soft mode behaviour has been found. The anomalies observed in the temperature dependence of low- and high-frequency phonon modes at ∼ 250 and ∼ 180 K, respectively, are explained as due to the phase transitions. It is supposed that the phase transitions are caused by the deformation of structural complexes GaS4, rather than by slippage of Tl atom channels in [110] and [110] directions, which is mainly responsible for the appearance of the low-temperature ferroelectric phase transitions in other representatives of TlBX2 layer compounds. © 1993.Item Open Access Low-temperature photoluminescence spectra of layered semiconductor TlGaS2(Pergamon Press, 1998) Gasanly, N. M.; Aydınlı, Atilla; Bek, A.; Yilmaz, I.Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 × 10-2 to 9 W cm-2. The A- and B-bands were found to be due to radiative transitions from the deep donor levels located at 0.362 and 0.738 eV below the bottom of the conduction band to the shallow acceptor levels at 0.005 and 0.085 eV located above the top of the valence band, respectively. The proposed energy-level diagram permits us to interpret the recombination processes in TlGaS2 layered single crystals. © 1997 Elsevier Science Ltd.Item Open Access Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals(Pergamon Press, 1995) Allakhverdiev, K. R.; Gasanly, N. M.; Aydınlı, AtillaLow-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel. © 1995.Item Open Access Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems(Institute of Physics Publishing Ltd., 1994) Tanatar, Bilal; Constantinou, N. C.We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.Item Open Access Real-space condensation in a dilute Bose gas at low temperature(Natsional'na Akademiya Nauk Ukrainy, 2001) Kulik, I. O.We show with a direct numerical analysis that a dilute Bose gas in an external potential - which is choosen for simplicity as a radial parabolic well - undergoes at certain temperature Tc a phase transition to a state supporting macroscopic fraction of particles at the origin of the phase space (r = 0, p = 0). Quantization of particle motion in a well wipes out sharp transition but supports a distribution of radial particle density p(r) peacked at r = 0 (a real-space condensate) as well as the phase-space Wigner distribution density W(r, p) peaked at r = 0 and p = 0 below the crossover temperature Tc* of order of Tc. Fixed-particle-number canonical ensemble which is a combination of the fixed-N condensate part and the fixed-μ excitation part is suggested to resolve the difficulty of large fluctuation of the particle number (δN ∼ N) in the Bose-Einstein condensation problem treated within the orthodox grand canonical ensemble formalism.