Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals

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Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals.pdf (462.36 KB)

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1995

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Abstract

Low-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel. © 1995.

Source Title

Solid State Communications

Publisher

Pergamon Press

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Keywords

A. ferroelectrics, A. semiconductors, D. optical properties, D. phase transitions, E. luminescence, Band structure, Crystal symmetry, Crystals, Ferroelectric materials, Low temperature effects, Optical properties, Phase transitions, Photoluminescence, Thallium compounds, Low temperature photoluminescence spectra, Mixed crystals, Thallium indium gallium sulfide, Semiconducting indium compounds

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http://hdl.handle.net/11693/25892

Published Version (Please cite this version)

http://dx.doi.org/10.1016/0038-1098(95)00037-2

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Scholarly Publications - Physics

Language

English

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Article