Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals

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Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals.pdf (462.36 KB)

Date

1995

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Source Title

Solid State Communications

Print ISSN

0038-1098

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Pergamon Press

Volume

94

Issue

9

Pages

777 - 782

Language

English

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Article

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Abstract

Low-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and 2.576 eV (F) for TlInS2 are interpreted by supposing that the crystal undergoes structural phase transitions. Band A is considered to come from a donor-acceptor recombination channel. © 1995.

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Keywords

A. ferroelectrics, A. semiconductors, D. optical properties, D. phase transitions, E. luminescence, Band structure, Crystal symmetry, Crystals, Ferroelectric materials, Low temperature effects, Optical properties, Phase transitions, Photoluminescence, Thallium compounds, Low temperature photoluminescence spectra, Mixed crystals, Thallium indium gallium sulfide, Semiconducting indium compounds

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http://hdl.handle.net/11693/25892

Published Version (Please cite this version)

http://dx.doi.org/10.1016/0038-1098(95)00037-2

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Scholarly Publications - Physics