Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
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1994
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Abstract
We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
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Journal of Physics Condensed Matter
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Institute of Physics Publishing Ltd.
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Alloy disorder scattering, Axial magnetic field, Electron impurity interaction, Homogeneous background scattering, Interface roughness scattering, Remote impurity scattering, Anisotropy, Charge carriers, Crystal impurities, Electron energy levels, Electron scattering, Low temperature effects, Magnetic field effects, Mathematical models, Semiconducting gallium arsenide, Electron transport properties
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English