Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
Date
1994
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Source Title
Journal of Physics Condensed Matter
Print ISSN
0953-8984
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Publisher
Institute of Physics Publishing Ltd.
Volume
6
Issue
27
Pages
5113 - 5127
Language
English
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Abstract
We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
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Keywords
Alloy disorder scattering , Axial magnetic field , Electron impurity interaction , Homogeneous background scattering , Interface roughness scattering , Remote impurity scattering , Anisotropy , Charge carriers , Crystal impurities , Electron energy levels , Electron scattering , Low temperature effects , Magnetic field effects , Mathematical models , Semiconducting gallium arsenide , Electron transport properties