Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures

Date
2015
Advisor
Instructor
Source Title
2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
218 - 221
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.

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Keywords
Atomic layer deposition, Atoms, Cathodes, Deposition, Electrodes, Electron sources, Low temperature effects, Nanofibers, Nanostructures, Nanotechnology, Nitrides, Photodetectors, Photons, Pulsed laser deposition, Temperature, Thin film transistors, Hollow cathodes, Hollow nanofibers, III-Nitride, Low impurity concentrations, Low temperature synthesis, Low temperatures, Proof of concept, UV photodetectors, Thin films
Citation
Published Version (Please cite this version)