Browsing by Subject "Electron mobility"
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Item Open Access Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC(Elsevier, 2010-09-25) Caban, P.; Strupinski, W.; Szmidt, J.; Wojcik, M.; Gaca, J.; Kelekci, O.; Caliskan, D.; Özbay, EkmelThe influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4HSiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.Item Open Access Effects of field plate on the maximum temperature and temperature distribution for gan HEMT devices(American Society of Mechanical Engineers, 2016) Kara D.; Donmezer N.; Canan, Talha Furkan; Şen, Özlem; Özbay, EkmelField plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power densities, GaN HEMTs suffer significantly from the concentrated heating effects in a small region called hotspot located closer to the drain edge of the gate. Although; the stabilizing effect of field plate on the electrical field distribution in HEMTs is known by researchers, its effect on temperature distribution and the hotspot temperature is still not studied to a greater extend. For this purpose, finite element thermal modelling of devices with different sizes of field plates are performed using the joule heating distribution data obtained from 2D electrical simulations. Results obtained from such combined model show that the existence of a field plate changes the electrical field, therefore the heat generation distribution within device. Moreover; increasing the size of the field plate has an effect on the maximum temperature at the hotspot region. The results are used to analyze these effects and improve usage of field plates for high electron mobility transistors to obtain better temperature profiles. Copyright © 2016 by ASME.Item Open Access Effects of perfluorination on thiophene and pyrrole oligomers(2010) Salzner, U.The effect of perfluorination on thiophene and pyrrole oligomers in neutral, cationic, and anionic states was investigated with density functional theory at the (TD)B3P86-30%/6-31G* level. For the title compounds fluorination leads to planarization. For pyrroles a band gap reduction of 0.58 eV results, as unsubstituted pyrroles are nonplanar and disordered in the solid state. For thiophene the band gap is slightly increased as long thiophene oligomers are almost planar. Ionization energies and electron affinities increase upon fluorination by 0.65 and 0.60 eV for polythiophene and by 0.45 and 0.90 eV for polypyrrole. Conduction band widths increase by 0.5 for polythiophene and by 0.7 eV for polypyrrole. Spectra of charged (doped) forms are almost identical to those of the parent systems. Like parent systems, fluorinated oligomers with chain lengths of more than six rings develop a third UV absorption that increases in strength and decreases in energy upon chain length increase.Item Open Access Electrical conduction properties of Si δ-doped GaAs grown by MBE(2009) Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S.The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.Item Open Access Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications(2006) Yu H.; Caliskan, D.; Özbay, EkmelSemi-insulating character (sheet resistivity of 3.26 × 10 11 Ω/sq) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor (HEMT) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. © 2006 American Institute of Physics.Item Open Access High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration(IEEE, 2009) Yu, H.-Y.; Kobayashi, M.; Jung, W. S.; Okyay, Ali Kemal; Nishi, Y.; Saraswat, K. C.We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.Item Open Access High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures(2009) Bando, M.; Ohashi, T.; Dede, M.; Akram, R.; Oral, A.; Park, S.Y.; Shibasaki I.; Handa H.; Sandhu, A.Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive properties of micro-Hall devices fabricated using InAlSb/InAsSb/InAlSb heterostructures where electrical conduction was confined to a 30 nm-InAsSb two-dimensional electron gas layer. The 300 K electron mobility and sheet carrier concentration were 36 500 cm2 V-1 s-1 and 2.5× 1011 cm-2, respectively. The maximum current-related sensitivity was 2 750 V A-1 T-1, which was about an order of magnitude greater than AlGaAs/InGaAs pseudomorphic heterostructures devices. Photolithography was used to fabricate 1 μm×1 μm Hall probes, which were installed into a scanning Hall probe microscope and used to image the surface of a hard disk. © 2009 American Institute of Physics.Item Open Access Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c(American Vacuum Society, 2009) Akram, R.; Dede, M.; Oral, A.The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. A novel method of quartz tuning fork atomic force microscopy feedback has been used which provides extremely simple operation in atmospheric pressures, high-vacuum, and variable-temperature environments and enables very high magnetic and reasonable topographic resolution to be achieved simultaneously. Micro-Hall probes were produced using optical lithography and reactive ion etching process. The active area of all different types of Hall probes were 1×1 μ m2. Electrical and magnetic characteristics show Hall coefficient, carrier concentration, and series resistance of the hall sensors to be 10 mG, 6.3× 1012 cm-2, and 12 k at 25 °C and 7 mG, 8.9× 1012 cm-2 and 24 k at 125 °C for AlGaNGaN two-dimensional electron gas (2DEG), 0.281 mG, 2.2× 1014 cm-2, and 139 k at 25 °C and 0.418 mG, 1.5× 1014 cm-2 and 155 k at 100 °C for Si and 5-10 mG, 6.25× 1012 cm-2, and 12 k at 25 °C for pseudomorphic high electron mobility transistors (PHEMT) 2DEG Hall probe. Scan of magnetic field and topography of hard disc sample at variable temperatures using all three kinds of probes are presented. The best low noise image was achieved at temperatures of 25, 100, and 125 °C for PHEMT, Si, and AlGaNGaN Hall probes, respectively. This upper limit on the working temperature can be associated with their band gaps and noise associated with thermal activation of carriers at high temperatures.Item Open Access Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel(IOP Publishing, 2010-03-16) Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, EkmelThe scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm2 (V s)-1 with corresponding sheet carrier densities of 2.3-1.3 × 1013 cm-2. On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In 0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm2 (V s)-1 with corresponding sheet carrier densities of 1.3 and 1.1 × 1013 cm-2, respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.Item Open Access Optical properties of the two-dimensional magnetoexcitons under the influence of the Rashba spin-orbit coupling(SPIE, 2011) Hakioglu, Tuğrul; Liberman, M.A.; Moskalenko, S.A.; Podlesny I.V.The influence of the Rashba spin-orbit coupling on the two-dimensional (2D) electrons and holes in a strong perpendicular magnetic field leads to different results of the Landau quantization in different spin projections. In Landau gauge the unidimensional wave vector describing the free motion in one in-plane direction is the same for both spin projections, whereas the numbers of the Landau quantization levels are different. For electron in s-type conduction band they differ by one, as was established earlier by Rashba1, whereas for heavy holes in p-type valence band influenced by the 2D symmetry of the layer they differ by three. There are two lowest spin-splitted Landau levels for electrons as well as two lowest for holes. They give rise to four lowest energy levels of the 2D magnetoexcitons. It is shown that two of them are dipole-active in band-to-band quantum transitions, one is quadrupole-active and the fourth is forbidden. The optical orientation under the influence of the circularly polarized light leads to optical alignment of the magnetoexcitons with different orbital momentum projections on the direction of the external magnetic field. © 2011 SPIE.Item Open Access Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier(IEEE, 2004-10) Schwindt, R. S.; Kumar, V.; Aktaş, Ozan; Lee, J.-W.; Adesida, I.The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.Item Open Access Theoretical investigation of excited states of oligothiophene anions(2008) Alkan, F.; Salzner, U.Electron-hole symmetry upon p- and n-doping of conducting organic polymers is rationalized with Hückel theory by the presence of symmetrically located intragap states. Since density functional theory (DFT) predicts very different geometries and energy level diagrams for conjugated π-systems than semiempirical methods, it is an interesting question whether DFT confirms the existence of electron-hole symmetry predicted at the Hückel level. To answer this question, geometries of oligothiophene anions with 5-19 rings were optimized and their UV/vis spectra were calculated with time-dependent DFT. Although DFT does not produce symmetrically placed sub-band energy levels, spectra of cations and anions are almost identical. The similarity in transition energies and oscillator strengths of anions and cations can be explained by the fact that the single sub-band energy level of cations lies above the valence band by the same amount of energy as the single sub-band level of anions lies below the conduction band. This and the resemblance of the energy level spacings in valence bands of cations to those in conduction bands of anions give rise to peaks with equal energies and oscillator strengths. © 2008 American Chemical Society.