Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC
Date
2010-09-25
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Source Title
Journal of Crystal Growth
Print ISSN
0022-0248
Electronic ISSN
Publisher
Elsevier
Volume
315
Issue
1
Pages
168 - 173
Language
English
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Abstract
The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4HSiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.
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Keywords
A1. High resolution X-ray diffraction , A3. Low pressure metalorganic vapor phase epitaxy , B1. Nitrides , B3. High electron mobility transistors , A1. Defects , A1. Nucleation , B1. Nitrides , High resolution X-ray diffraction , Low-pressure metalorganic vapor phase epitaxy , Coalescence , Defects , Diffraction , Electron mobility , Epitaxial growth , Gallium alloys , Gallium nitride , Metallorganic vapor phase epitaxy , Pressure effects , Silicon carbide , Superconducting films , Surface roughness , Vapors