Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier
Date
2004-10
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Source Title
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Print ISSN
1550-8781
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Publisher
IEEE
Volume
Issue
Pages
201 - 203
Language
English
Type
Conference Paper
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Volume Title
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Abstract
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.
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Keywords
Amplifier, Gallium nitride, GaN, HEMT, Low noise, MMIC, SiC, Wide bandgap, Low noise amplifier (LNA), Ohmic metal, Spiral inductors, Wide bandgap, Amplifiers (electronic), Electron mobility, Gallium nitride, Monolithic microwave integrated circuits, Rapid thermal annealing, Semiconducting aluminum compounds, Silicon carbide, Transmission line theory, High electron mobility transistors