Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier
Date
2004-10
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Source Title
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Print ISSN
1550-8781
Electronic ISSN
Publisher
IEEE
Volume
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Pages
201 - 203
Language
English
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Journal Title
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Abstract
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.
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Keywords
Amplifier , Gallium nitride , GaN , HEMT , Low noise , MMIC , SiC , Wide bandgap , Low noise amplifier (LNA) , Ohmic metal , Spiral inductors , Wide bandgap , Amplifiers (electronic) , Electron mobility , Gallium nitride , Monolithic microwave integrated circuits , Rapid thermal annealing , Semiconducting aluminum compounds , Silicon carbide , Transmission line theory , High electron mobility transistors