Electrical conduction properties of Si δ-doped GaAs grown by MBE

Date
2009
Authors
Yildiz, A.
Lisesivdin, S.B.
Altuntas H.
Kasap, M.
Ozcelik, S.
Advisor
Instructor
Source Title
Physica B: Condensed Matter
Print ISSN
0921-4526
Electronic ISSN
Publisher
Volume
404
Issue
21
Pages
4202 - 4206
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.

Course
Other identifiers
Book Title
Keywords
2D VRH, Impurity band conduction, Si δ-doped GaAs, Dislocation scattering, Electrical conduction, GaAs, High temperature, Hopping conduction, Impurity band conduction, Impurity bands, Localized state, Low temperatures, Mott variable-range hopping, Resistivity measurement, Temperature dependence, Temperature dependent, Temperature range, Carrier concentration, Conduction bands, Electric properties, Electron mobility, Gallium alloys, Hall effect, Magnetic field effects, Semiconducting gallium, Silicon, Temperature distribution, Transport properties, Thermal effects
Citation
Published Version (Please cite this version)