Browsing by Subject "Transport properties"

Now showing 1 - 9 of 9

Open Access
Atomic strings of group IV, III-V, and II-VI elements
(American Institute of Physics, 2004) Tongay, S.; Durgun, Engin; Çıracı, Salim
A systematic first-principles study of atomic strings made by group IV, III-V, and II-VI elements has revealed interesting mechanical, electronic, and transport properties. The double bond structure underlies their unusual properties. We found that linear chain of C, Si, Ge, SiGe, GaAs, InSb, and CdTe are stable and good conductor, although their parent diamond (zincblende) crystals are covalent (polar) semiconductors but, compounds SiC, BN, AlP, and ZnSe are semiconductors. First row elements do not form zigzag structures.
Open Access
Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
(2011) Celik O.; Tiras, E.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel
Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained by fitting the nonoscillatory component to a polynomial of second degree, and then subtracting it from the raw experimental data. It is shown that only first subband is occupied with electrons. The two-dimensional (2D) carrier density and the Fermi energy with respect to subband energy (EF-E1) have been determined from the periods of the SdH oscillations. The in-plane effective mass (m*) and the quantum lifetime (τq) of electrons have been obtained from the temperature and magnetic field dependencies of the SdH amplitude, respectively. The in-plane effective mass of 2D electrons is in the range between 0.19 m0 and 0.22 m0. Our results for in-plane effective mass are in good agreement with those reported in the literature © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Open Access
Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires
(A I P Publishing LLC, 2015) Keleş, Ü.; Çakan, A.; Bulutay, C.
We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.
Open Access
Effective mass of electron in monolayer graphene: Electron-phonon interaction
(AIP Publishing LLC, 2013-01-25) Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel
Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.
Open Access
Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009) Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S.
The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.
Open Access
Quantum effects in electrical and thermal transport through nanowires
(Institute of Physics Publishing, 2001) Çıracı, Salim; Buldum, A.; Batra, I. P.
Nanowires, point contacts and metallic single-wall carbon nanotubes are one-dimensional nanostructures which display important size-dependent quantum effects. Quantization due to the transverse confinement and resultant finite level spacing of electronic and phononic states are responsible for some novel effects. Many studies have revealed fundamental and technologically important properties, which are being explored for fabricating future nanodevices. Various simulation studies based on the classical molecular dynamics method and combined force and current measurements have shown the relationship between atomic structure and transport properties. The atomic, electronic and transport properties of these nanostructures have been an area of active research. This brief review presents some quantum effects in the electronic and phononic transport through nanowires.
Open Access
Size-dependent alternation of magnetoresistive properties in atomic chains
(American Institute of Physics, 2006) Durgun, Engin; Senger, R. T.; Mehrez, H.; Sevinçli, H.; Çıracı, Salim
Spin-polarized electronic and transport properties of carbon atomic chains are investigated when they are capped with magnetic transition-metal (TM) atoms like Cr or Co. The magnetic ground state of the TM-C n-TM chains alternates between the ferromagnetic (F) and antiferromagnetic (AF) spin configurations as a function of n. In view of the nanoscale spintronic device applications the desirable AF state is obtained for only even-n chains with Cr; conversely only odd-n chains with Co have AF ground states. When connected to appropriate metallic electrodes these atomic chains display a strong spin-valve effect. Analysis of structural, electronic, and magnetic properties of these atomic chains, as well as the indirect exchange coupling of the TM atoms through non-magnetic carbon atoms are presented.
Open Access
Spintronic properties of zigzag-edged triangular graphene flakes
(AIP Publishing LLC, 2010) Şahin, H.; Senger, R. T.; Çıracı, Salim
We investigate quantum transport properties of triangular graphene flakes with zigzag edges by using first principles calculations. Triangular graphene flakes have large magnetic moments which vary with the number of hydrogen atoms terminating its edge atoms and scale with its size. Electronic transmission and current-voltage characteristics of these flakes, when contacted with metallic electrodes, reveal spin valve and remarkable rectification features. The transition from ferromagnetic to antiferromagnetic state under bias voltage can, however, terminate the spin polarizing effects for specific flakes. Geometry and size dependent transport properties of graphene flakes may be crucial for spintronic nanodevice applications.
Open Access
Thermoelectric efficiency in model nanowires
(2013) Badalov, Sabuhi
Nowadays, the use of thermoelectric semiconductor devices are limited by their low efficiencies. Therefore, there is a huge amount of research effort to get high thermoelectric efficient materials with a fair production value. To this end, one important possibility for optimizing a material’s thermoelectric properties is reshaping their geometry. The main purpose of this thesis is to present a detailed analysis of thermoelectric efficiency of 2 lead systems with various geometries in terms of linear response theory, as well as 3 lead nanowire system in terms of the linear response and nonlinear response theories. The thermoelectric efficiency both in the linear response and nonlinear response regime of a model nanowire was calculated based on Landauer-B¨uttiker formalism. In this thesis, first of all, the electron transmission probability of the system at the hand, i.e. 2 lead or 3 lead systems are investigated by using R-matrix theory. Next, we make use of these electron transmission probability of model systems to find thermoelectric transport coefficients in 2 lead and 3 lead nanowires. Consequently, the effect of inelastic scattering is incorporated with a fictitious third lead in the 3 lead system. The efficiency at maximum power is especially useful to define the optimum working conditions of nanowire as a heat engine. Contrary to general expectation, increasing the strength of inelastic scattering is shown to be a means of making improved thermoelectric materials. A controlled coupling of the nanowire to a phonon reservoir for instance could be a way to increase the efficiency of nanowires for better heat engines.