Browsing by Subject "Semiconductor quantum wells"

Now showing 1 - 20 of 50

Open Access
All-fiber Yb-doped laser mode-locked by nanotubes
(IEEE, 2013) Zhang, Zewang; Popa, D.; Sun, Z.; Hasan, T.; Ferrari, A.C.; İlday, F. Ömer
Single-wall carbon nanotubes (SWNTs) and graphene have emerged as promising saturable absorbers (SAs), due to their broad operation bandwidth and fast recovery times [1-3]. However, Yb-doped fiber lasers mode-locked using CNT and graphene SAs have generated relatively long pulses. All-fiber cavity designs are highly favored for their environmental robustness. Here, we demonstrate an all-fiber Yb-doped laser based on a SWNT saturable absorber, which allows generation of 8.7 ps-long pulses, externally compressed to 118 fs. To the best of our knowledge, these are the shortest pulses obtained with SWNT SAs from a Yb-doped fiber laser. © 2013 IEEE.
Open Access
Anomalous spectral characteristics of ultrathin sub-nm colloidal CdSe nanoplatelets
(Optical Society of America, 2017) Bose S.; Delikanlı, Savaş; Yeltik, Aydan; Sharma, Manoj; Erdem, Onur; Dang C.; Fan W.; Zhang D.H.; Demir, Hilmi Volkan
We demonstrate high quantum yield broad photoluminescence emission of ultrathin sub-nanometer CdSe nanoplatelets (two-monolayer). They also exhibit polarization-characterized lateral size dependent anomalous heavy hole and light/split-off hole absorption intensities. © 2017 IEEE.
Open Access
Carrier-induced refractive index change in InN
(Wiley, 2008) Bulutay, Ceyhun; Zakhleniuk, N. A.
Rapid development of InN technology demands comprehensive assessment of the electronic and optoelectronic potential of this material. In this theoretical work the effect of free electrons on the optical properties of the wurtzite phase of InN is investigated. The blue shift of the optical absorption edge by the free-carrier band filling is known as the Burstein-Moss effect for which InN offers to be a very suitable candidate as has been recently demonstrated experimentally. Due to well known Kramers-Kronig relations, a change in absorption is accompanied by a change in the index of refraction. Considering n-type InN samples with free electron concentrations ranging from 5x10 17 to 5x1020 cm-3, and employing a nonlocal empirical pseudopotential band structure, it is shown that this leads to a few percent change of the index of refraction. These carrier-induced refractive index changes can be utilized in optical switches, futhermore it needs to be taken into account in the design of InN-based optical devices such as lasers and optical modulators.
Open Access
Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices
(Institute of Physics Publishing Ltd., 2017) El-Atab, N.; Ulusoy, T. G.; Ghobadi, A.; Suh, J.; Islam, R.; Okyay, Ali Kemal; Saraswat, K.; Nayfeh, A.
The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer deposition on different substrate terminations. Transmission electron microscopy and Raman measurements indicate that the nano-islands consist of nano-crystallites of the cubic-crystalline phase, which results in a higher dielectric constant (κ ∼ 35) than the amorphous phase case (κ ∼ 20). X-ray photoelectron spectroscopy measurements show that a deep quantum well is formed in the Al2O3/ZrO2/Al2O3 system, which is substantially different to that in the bulk state of zirconia and is more favorable for memory application. Finally, a memory device with a ZrO2 nano-island charge-trapping layer is fabricated, and a wide memory window of 4.5 V is obtained at a low programming voltage of 5 V due to the large dielectric constant of the islands in addition to excellent endurance and retention characteristics.
Open Access
Density functional theory investigation of substituent effects on building blocks of conducting polymers
(Elsevier, 1999) Salzner, U.
Substituted heterocyclic dimers were calculated employing density functional theory (DFT) and analyzed with the natural bond orbits method (NBO). Substitution in 3- and 4-positions leads to parallel shifting of HOMO and LUMO but does not reduce energy gaps. For bridge dimers, HOMO-LUMO gaps correlate with π-electron densities in the carbon backbone and energy gap reduction correlate with the strength of π-π* interactions from the backbone to the bridging group. Alternating donor-acceptor groups do not reduce energy gaps and lead to systems with average HOMO and LUMO levels compared to the parent molecules.
Open Access
Direct numerical solution of the Lippmann-Schwinger equation in coordinate space without partial-wave decomposition
(American Physical Society, 2016) Kuruoğlu, Z. C.
Direct numerical solution of the coordinate-space integral-equation version of the two-particle Lippmann-Schwinger (LS) equation is considered without invoking the traditional partial-wave decomposition. The singular kernel of the three-dimensional LS equation in coordinate space is regularized by a subtraction technique. The resulting nonsingular integral equation is then solved via the Nystrom method employing a direct-product quadrature rule for three variables. To reduce the computational burden of discretizing three variables, advantage is taken of the fact that, for central potentials, the azimuthal angle can be integrated out, leaving a two-variable reduced integral equation. A regularization method for the kernel of the two-variable integral equation is derived from the treatment of the singularity in the three-dimensional equation. A quadrature rule constructed as the direct product of single-variable quadrature rules for radial distance and polar angle is used to discretize the two-variable integral equation. These two- and three-variable methods are tested on the Hartree potential. The results show that the Nystrom method for the coordinate-space LS equation compares favorably in terms of its ease of implementation and effectiveness with the Nystrom method for the momentum-space version of the LS equation.
Open Access
Effect of cross-sectional geometry on the RPA plasmons of quantum wires
(Pergamon Press, 1994) Bennett, C. R.; Tanatar, Bilal; Constantinou, N. C.; Babiker, M.
The effect of cross-sectional geometry on both the intrasubband plasmon and intersubband plasmon of a quantum wire is investigated within a two-subband RPA scheme. Exact analytical electronic wavefunctions for circular, elliptical and rectangular wires are employed within the infinite barrier approximation. It is found that for fixed cross-sectional area and linear electron concentration, the intrasubband plasmon energy is only marginally dependent on the wire geometry whereas the intersubband plasmon energy may change considerably due to its dependence on the electronic subband energy difference. © 1994.
Open Access
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014) Cetđn, S.; Sağlam, S.; Ozcelđk, S.; Özbay, Ekmel
Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples. ©2014 Gazi University Eti Mahallesi. All rights reserved.
Open Access
Effective mass enhancement in two-dimensional electron systems: The role of interaction and disorder effects
(Elsevier, 2004) Asgari, R.; Davoudi, B.; Tanatar, Bilal
Recent experiments on two-dimensional (2D) electron systems have found a sharp increase in the effective mass of electrons with decreasing electron density. In an effort to understand this behavior we employ the many-body theory to calculate the quasiparticle effective mass in 2D electron systems. Because the low density regime is explored in the experiments we use the GWγ approximation where the vertex correction γ describes the correlation effects to calculate the self-energy from which the effective mass is obtained. We find that the quasiparticle effective mass shows a sharp increase with decreasing electron density. Disorder effects due to charged impurity scattering plays a crucial role in density dependence of effective mass.
Open Access
Electrically-reconfigurable integrated photonic switches
(IEEE, 2004) Fidaner, O.; Demir, Hilmi Volkan; Sabnis V.A.; Harris Jr. J.S.; Miller, D.A.B.; Zheng J.-F.
We report remotely electrically reconfigurable photonic switches that intimately integrate waveguide electroabsorption modulators with surface-normal photodiodes, avoiding conventional electronics. These switches exhibit full C-band wavelength conversion at 5 Gb/s and are remotely reconfigurable within tens of nanoseconds.
Open Access
Electronic structure of conducting organic polymers: insights from time-dependent density functional theory
(John Wiley & Sons Ltd., 2014) Salzner, U.
Conducting organic polymers (COPs) became an active field of research after it was discovered how thin films rather than insoluble infusible powders can be produced. The combination of the properties of plastics with those of semiconductors opened the research field of organic electronics. COPs share many electronic properties with inorganic semiconductors, but there are also major differences, e.g., the nature of the charge carriers and the amount of the exciton binding energy. Theoretical analysis has been used to interpret experimental observations early on. The polaron model that was developed from one-electron theories is still the most widely used concept. In the 1990s, time-dependent density functional theory (TDDFT) became available for routine calculations. Using TDDFT, electronic states of long oligomers can be calculated. Now UV spectra of neutral and oxidized or reduced species can be compared with in situ UV spectra recorded during doping. Likewise states of cations can be used to model photoelectron spectra. Analysis of states has resolved several puzzles which cannot be understood with the polaron model, e.g., the origin of the dual absorption band of green polymers and the origin of a 'vestigial neutral band' upon doping of long oligomers. DFT calculations also established that defect localization is not crucial for spectral changes observed during doping and that there are no bound bipolarons in COPs.
Open Access
Energy relaxation of electrons in InGaN quantum wells
(Springer New York LLC, 2015-04) Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.; Balkan, N.; Atmaca, G.; Narin, P.; Cakmak, H.; Özbay, Ekmel
In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < Te < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. © 2015, The Minerals, Metals & Materials Society and ASM International.
Open Access
Energy-transfer rate in a double-quantum-well system due to Coulomb coupling
(Elsevier, 2002) Senger, R. T.; Tanatar, Bilal
We study the energy-transfer rate for electrons in a double-quantum-well structure, where the layers are coupled through screened Coulomb interactions. The energy-transfer rate between the layers (similar to the Coulomb drag effect in which the momentum-transfer rate is considered) is calculated as functions of electron densities, interlayer spacing, the temperature difference of the 2DEGs, and the electron drift velocity in the drive layer. We employ the full wave vector and frequency-dependent random-phase approximation at finite temperature to describe the effective interlayer Coulomb interaction. We find that the collective modes (plasmons) of the system play a dominant role in the energy-transfer rates.
Open Access
Engineered ultraviolet InGaN/AlGaN multiple-quantum-well structures for maximizing cathodoluminescence efficiency
(American Institute of Physics Inc., 2022-01-04) Zheng, Haiyang; Sharma, Vijay Kumar
We demonstrate a systematic way to understand and select the accelerating voltage for maximizing cathodoluminescence (CL) by correlating the carrier diffusion length with the efficiency of ultraviolet (UV) InGaN/AlGaN multiple quantum wells (MQWs). We showed that the absorption of MQWs benefits from the absorbed energy within the diffusion length below the MQWs. With this understanding, we have achieved good agreement between the experimental data of and the Monte Carlo (CASINO) simulations on the dependence of acceleration voltage and QW number on InGaN/AlGaN MQW structures. These findings indicate that CL-based UV generation from carefully engineered III-N MQW structures with an appropriate number of QWs is highly promising. The understanding and application of this work can be extended to electron-beam pumped devices emitting in deep-UV (200-280 nm) wavelengths. © 2022 Author(s).
Open Access
Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
(Optical Society of America, 2013) Ji Y.; Zhang, Z. -H.; Tan S.T.; Ju, Z. G.; Kyaw, Z.; Hasanov N.; Liu W.; Sun X. W.; Demir, Hilmi Volkan
We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.
Open Access
Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures
(SPIE, 2011) Jang L.-W.; Ju J.-W.; Jeon J.-W.; Jeon, D.-W.; Choi J.-H.; Lee, S.-J.; Jeon, S.-R.; Baek J.-H.; Sarı, Emre; Demir, Hilmi Volkan; Yoon H.-D.; Hwang, S.-M.; Lee I.-H.
We investigated the surface plasmon coupling behavior in InGaN/GaN multiple quantum wells at 460 nm by employing Ag nanostructures on the top of a roughened p-type GaN. After the growth of a blue light emitting diode structure, the p-GaN layer was roughened by inductive coupled plasma etching and the Ag nanostructures were formed on it. This structure showed a drastic enhancement in photoluminescence and electroluminescence intensity and the degree of enhancement was found to depend on the morphology of Ag nanostructures. From the time-resolved photoluminescence measurement a faster decay rate for the Ag-coated structure was observed. The calculated Purcell enhancement factor indicated that the improved luminescence intensity was attributed to the energy transfer from electron-hole pair recombination in the quantum well to electron vibrations of surface plasmon at the Ag-coated surface of the roughened p-GaN. © 2011 SPIE.
Open Access
Femtosecond pulse generation from a Ti3+: Sapphire laser near 800 nm with voltage reconfigurable graphene saturable absorbers
(OSA - The Optical Society, 2017) Baylam, Işınsu; Özharar, Sarper; Kakenov, Nurbek; Kocabaş, Coşkun; Sennaroglu, Alphan
We experimentally show that a voltage-controlled graphene-gold supercapacitor saturable absorber (VCG-gold-SA) can be operated as a fast saturable absorber with adjustable linear absorption at wavelengths as low as 795 nm. This was made possible by the use of a novel supercapacitor architecture, consisting of a high-dielectric electrolyte sandwiched between a graphene and a gold electrode. The high-dielectric electrolyte allowed continuous, reversible adjustment of the Fermi level and, hence, the optical loss of the VCG-gold-SA up to the visible wavelengths at low bias voltages of the order of a few volts (0-2 V). The fast saturable absorber action of the VCG-gold-SA and the bias-dependent reduction of its loss were successfully demonstrated inside a femtosecond Ti3+:sapphire laser operating near 800 nm. Dispersion compensation was employed by using dispersion control mirrors and a prism pair. At a bias voltage of 1.2 V, the laser operated with improved power performance in comparison with that at zero bias, and the VCG-gold-SA initiated the generation of nearly transform-limited pulses as short as 48 fs at a pulse repetition rate of 131.7 MHz near 830 nm. To the best of our knowledge, this represents the shortest wavelength where a VCG-gold-SA has been employed as a mode locker with adjustable loss. © 2017 Optical Society of America.
Open Access
Förster-type nonradiative energy transfer directed from colloidal quantum dots to epitaxial quantum wells for light harvesting applications
(Optical Society of America, 2011) Nizamoğlu, Sedat; Sarı, Emre; Baek J.-H.; Lee I.-H.; Demir, Hilmi Volkan
We report on Frster-type nonradiative energy transfer directed from CdSe/ZnS core/shell quantum dots to InGaN/GaN quantum wells with 69.6% efficiency at 1.527 ns-1 rate at room temperature for potential light harvesting and solar cells applications. © 2011 OSA.
Open Access
Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: a first-principles perspective to recent synthesis
(American Institute of Physics Inc., 2018) Kecik D.; Onen, A.; Konuk, M.; Gürbüz, E.; Ersan, F.; Cahangirov, S.; Aktürk, E.; Durgun, Engin; Çıracı, Salim
Potential applications of bulk GaN and AlN crystals have made possible single and multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005, the theoretical studies have predicted that GaN and AlN can form two-dimensional (2D) stable, single-layer (SL) structures being wide band gap semiconductors and showing electronic and optical properties different from those of their bulk parents. Research on these 2D structures have gained importance with recent experimental studies achieving the growth of ultrathin 2D GaN and AlN on substrates. It is expected that these two materials will open an active field of research like graphene, silicene, and transition metal dichalcogenides. This topical review aims at the evaluation of previous experimental and theoretical works until 2018 in order to provide input for further research attempts in this field. To this end, starting from three-dimensional (3D) GaN and AlN crystals, we review 2D SL and multilayer (ML) structures, which were predicted to be stable in free-standing states. These are planar hexagonal (or honeycomb), tetragonal, and square-octagon structures. First, we discuss earlier results on dynamical and thermal stability of these SL structures, as well as the predicted mechanical properties. Next, their electronic and optical properties with and without the effect of strain are reviewed and compared with those of the 3D parent crystals. The formation of multilayers, hence prediction of new periodic layered structures and also tuning their physical properties with the number of layers are other critical subjects that have been actively studied and discussed here. In particular, an extensive analysis pertaining to the nature of perpendicular interlayer bonds causing planar GaN and AlN to buckle is presented. In view of the fact that SL GaN and AlN can be fabricated only on a substrate, the question of how the properties of free-standing, SL structures are affected if they are grown on a substrate is addressed. We also examine recent works treating the composite structures of GaN and AlN joined commensurately along their zigzag and armchair edges and forming heterostructures, δ-doping, single, and multiple quantum wells, as well as core/shell structures. Finally, outlooks and possible new research directions are briefly discussed. © 2018 Author(s).
Open Access
High-efficiency optical gain in type-II semiconductor nanocrystals of alloyed colloidal quantum wells
(American Chemical Society, 2017) Guzelturk, B.; Kelestemur Y.; Olutas M.; Li, Q.; Lian, T.; Demir, Hilmi Volkan
Colloidal nanocrystals having controlled size, tailored shape, and tuned composition have been explored for optical gain and lasing. Among these, nanocrystals having Type-II electronic structure have been introduced toward low-threshold gain. However, to date, their performance has remained severely limited due to diminishing oscillator strength and modest absorption cross-section. Overcoming these problems, here we realize highly efficient optical gain in Type-II nanocrystals by using alloyed colloidal quantum wells. With composition-tuned core/alloyed-crown CdSe/CdSexTe1-x quantum wells, we achieved amplified spontaneous emission thresholds as low as 26 μJ/cm2, long optical gain lifetimes (τgain ≈ 400 ps), and high modal gain coefficients (gmodal ≈ 930 cm-1). We uncover that the optical gain in these Type-II quantum wells arises from the excitations localized to the alloyed-crown region that are electronically coupled to the charge-transfer state. These alloyed heteronanostructures exhibiting remarkable optical gain performance are expected to be highly appealing for future display and lighting technologies.