Effect of cross-sectional geometry on the RPA plasmons of quantum wires
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1994
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Abstract
The effect of cross-sectional geometry on both the intrasubband plasmon and intersubband plasmon of a quantum wire is investigated within a two-subband RPA scheme. Exact analytical electronic wavefunctions for circular, elliptical and rectangular wires are employed within the infinite barrier approximation. It is found that for fixed cross-sectional area and linear electron concentration, the intrasubband plasmon energy is only marginally dependent on the wire geometry whereas the intersubband plasmon energy may change considerably due to its dependence on the electronic subband energy difference. © 1994.
Source Title
Solid State Communications
Publisher
Pergamon Press
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A. nanostructures, A. semiconductors, D. dielectric response, Approximation theory, Electromagnetic dispersion, Electromagnetic waves, Electron energy levels, Geometry, Mathematical models, Matrix algebra, Quantum theory, Semiconductor device structures, Waveform analysis, Cross sectional geometry, Dielectric response, Electronic subband energy difference, Electronic wavefunctions, Fixed cross sectional area, Infinite barrier approximation, Linear electron concentration, Plasmons, Quantum wires, Semiconductor quantum wells
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Language
English
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Article