Browsing by Subject "Radiative recombination"

Now showing 1 - 8 of 8

Open Access
Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
(IEEE, 2009) Sarı, Emre; Nizamoğlu, Sedat; Lee I.-H.; Baek J.-H.; Demir, Hilmi Volkan
We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite direction to the polarization-induced electrostatic fields inside the well layers. Under the increasing external electric field, we observe a decrease in carrier lifetimes (τ) and radiative recombination lifetimes (τr), latter showing a weaker dependence. Our results on τr show an agreement with our transfer matrix method based simulation results and demonstrate Fermi's golden rule in polar InGaN/GaN quantum heterostructures dependent on electric field. For our study, we grew 5 pairs of 2.5 nm thick In0.15Ga 0.85N quantum well and 7.5 nm thick GaN barrier layers in a p-i-n diode architecture using metal-organic chemical vapor deposition (MOCVD) on a c-plane sapphire substrate. Devices with 300 μm × 300 μm mesa size were fabricated using standard photolithography, reactive ion etching and metallization steps. We used indium-tin oxide (ITO) based semi-transparent contacts in top (p-GaN) layer for uniform application of electric field across the well layers. The fabricated devices were diced and mounted on a TO-can for compact testing. © 2009 IEEE.
Open Access
Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields
(American Institute of Physics, 2009-05-29) Sari, E.; Nizamoglu, S.; Lee, I. H.; Baek, J. H.; Demir, Hilmi Volkan
Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence.
Open Access
Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
(Optical Society of America, 2013) Ji Y.; Zhang, Z. -H.; Tan S.T.; Ju, Z. G.; Kyaw, Z.; Hasanov N.; Liu W.; Sun X. W.; Demir, Hilmi Volkan
We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating that hole transport depth is limited in the active region. Emission from deeper wells only occurs under high current injection. However, with Mg-doped quantum barriers, holes penetrate deeper within the active region even under low injection, increasing the radiative recombination. Moreover, the improved hole transport leads to reduced forward voltage and enhanced light generation. This is also verified by numerical analysis of hole distribution and energy band structure. © 2013 Optical Society of America.
Open Access
Low-threshold optical gain and lasing of colloidal nanoplatelets
(IEEE, 2014-10) Keleştemur, Yusuf; Güzeltürk, Burak; Olutaş, Murat; Delikanlı, Savaş; Demir, Hilmi Volkan
Semiconductor nanocrystals, which are also known as colloidal quantum dots (CQDs), are highly attractive materials for high performance optoelectronic device applications such as lasers. With their size, shape and composition tunable electronic structure and optical properties, CQDs are highly desired for achieving full-color, temperature-insensitive, low-threshold and solution-processed lasers [1, 2]. However, due to their small size, they suffer from the nonradiative multiexciton Auger Recombination (AR), where energy of a bound electron-hole pair is transferred to a third particle of either an electron or a hole instead of radiative recombination. Therefore, CQDs having suppressed AR are strongly required for achieving high quality CQD-based lasers. To address this issue, CQDs having different size, shape and electronic structure have been synthesized and studied extensively [3-5]. Generally, suppression of AR and lower optical gain thresholds are achieved via reducing the wavefunction overlap of the electron and hole in a CQD. However, the separation of the electron and hole wavefunctions will dramatically decrease the oscillator strength and optical gain coefficient, which is highly critical for achieving high performance lasers. Therefore, colloidal materials with suppressed AR and high gain coefficients are highly welcomed. Here, we study optical gain performance of colloidal quantum wells [6] of CdSe-core and CdSe/CdS core/crown nanoplatelets (NPLs) that demonstrate remarkable optical properties with ultra-low threshold one- and two-photon optical pumping. As a result of their giant oscillator strength, superior optical gain and lasing performance are achieved from these colloidal NPLs with greatly enhanced gain coefficient [7]. © 2014 IEEE.
Open Access
Observation of biexcitons in the presence of trions generated via sequential absorption of multiple photons in colloidal quantum dot solids
(IEEE, 2012) Cihan, Ahmet Fatih; Hernandez-Martinez Pedro L.; Kelestemur, Yusuf; Demir, Hilmi Volkan
Multi exciton generation (MEG) and multi exciton recombination (MER) in semiconductor quantum dots (QDs) have recently attracted significant scientific interest as a possible means to improve device efficiencies [1-5]. Convenient bandgap tunability, easy colloidal synthesis, and solution-based processability of these QDs make them further attractive for such device applications using MEG and MER. For example, recent theoretical and experimental studies have shown that MEG enables >100% peak external quantum efficiency where the generated multi excitons (MEs) are collected in a simple QD solar cell structure [1]. Furthermore, MEG has also been shown in QD photodetectors exhibiting substantially increased photocurrent levels [2]. Another promising application for MEs is the use of QDs as an alternative gain medium based on MER for lasers. Although MEG is very promising and supported with quite persuasive reports, there are still some debatable issues that need to be clarified. One of the issues that have generated great debates in the field has been the confusion of MER with the recombination of trions, which takes place in photocharged QDs. To utilize MEG and MER in practical devices such as QD solar cells and QD lasing devices, these phenomena need to be well understood. Here, we showed distinct spectrally-resolved temporal behavior of biexciton (BX), single exciton (X) and trion radiative recombinations in near unity quantum yield (QY) quasi-type II CdSe/CdS core/shell nanocrystal QDs. Upon sequential absorption of multiple photons, the extraction of Xs, BXs, and trions were achieved using time correlated single photon counting (TCSPC) measurements performed on low concentration thin film samples of these QDs at different emission wavelengths. The QDs were embedded in PMMA medium to obtain homogeneous samples and avoid Förster-type nonradiative energy transfer (NRET) between them. Here to extract Xs, BXs, and trions, we devised a new analysis approach for the time decays of the QDs that allowed us to attribute the physical events to their corresponding time decay terms, which were further verified with their excitation intensity dependencies [6]. © 2012 IEEE.
Open Access
P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas
(2013) Zhang, Z.-H.; Tiam Tan, S.; Kyaw, Z.; Liu W.; Ji, Y.; Ju, Z.; Zhang X.; Wei Sun X.; Volkan Demir H.
Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants. © 2013 AIP Publishing LLC.
Open Access
Reduced recombination and enhanced UV-assisted photocatalysis by highly anisotropic titanates from electrospun TiO2-SiO2 nanostructures
(Royal Society of Chemistry, 2014) Babu, V. J.; Vempati S.; Ramakrishna, S.
The surface areas of electrospun fibers/rice grain-shaped nanostructures of TiO2-SiO2 composites were further enhanced after transforming them into thorn or sponge shaped titanates via selective leaching of SiO2, which was reported by our group previously [RSC Adv., 2012, 2, 992]. In this study, we report on their application in photocatalytic activity (PCA) when juxtaposed with photoluminescence (PL). Two defect related bands are observed in PL and their origin is discussed in relation to calcination, crystallization and nucleation effects. The relative PL intensity for sponge shapes was the lowest and hence had the lowest radiative recombination, which suggests carrier trapping at defect centers. This enables the charge carriers to migrate to the surface and participate in the PCA. The results of PCA suggested that the sponge-shaped titanate exhibits the highest degradation rate among all samples. A plausible mechanism for the differences in PCA is proposed based on the variation in the defect-densities. This journal is © the Partner Organisations 2014.
Open Access
White CdS nanoluminophore based tunable hybrid light emitting diodes
(IEEE, 2007) Nizamoğlu, Sedat; Mutlugün, Evren; Akyüz, Özgün; Kosku-Perkgöz, Nihan; Demir, Hilmi Volkan; Liebscher, L.; Sapra, S.; Gaponik, N.; Eychmüller, A.
The study aims to fabricate and demonstrate hybrid white light emitting diodes that integrate white emitting CdS nanoluminophores with high light quality. Results show that the white light properties of these hybrid WLED (including (x,y) chromaticity coordinates, color temperature, and color rendering index (Ra)) are conveniently tuned as desired across the white region by controlling the number of these surface state emitting nanoluminophores hybridized on the n-UV LED platform. In this tuning process, with the increasing number of the hybridized surface state emitting nanocrystals, it is observed that (x,y) and Ra increase while Tc decreases.