Browsing by Subject "Metallic films"

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Open Access
Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics
(Wiley-VCH Verlag, 2017) Sisman, Z.; Bolat, S.; Okyay, Ali Kemal
We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Open Access
Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material
(Wiley-VCH Verlag, 2014) Battal, E.; Bolat, S.; Tanrikulu, M. Y.; Okyay, Ali Kemal; Akin, T.
ZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37 eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as-10.4% K-1 near room temperature with the ZnO thin film grown at 120 °C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 °C grown ZnO has a corner frequency of 2 kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 °C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Open Access
Co doping induced structural and optical properties of sol-gel prepared ZnO thin films
(Elsevier BV, 2014-11) Gungor, E.; Gungor, T.; Caliskan, D.; Ceylan, A.; Özbay, Ekmel
The preparation conditions for Co doping process into the ZnO structure were studied by the ultrasonic spray pyrolysis technique. Structural and optical properties of the Co:ZnO thin films as a function of Co concentrations were examined. It was observed that hexagonal wurtzite structure of ZnO is dominant up to the critical value, and after the value, the cubic structural phase of the cobalt oxide appears in the X-ray diffraction patterns. Every band-edge of Co:ZnO films shifts to the lower energies and all are confirmed with the PL measurements. Co substitution in ZnO lattice has been proved by the optical transmittance measurement which is observed as the loss of transmission appearing in specific region due to Co2+ characteristic transitions. © 2014 Elsevier B.V. All rights reserved.
Open Access
Concentric ring structures as efficient SERS substrates
(Institute of Electrical and Electronics Engineers, 2013) Cinel, N. A.; Cakmakyapan, S.; Ertas, G.; Özbay, Ekmel
Plasmonic nanopatterned structures that can work as highly efficient surface-enhanced Raman scattering (SERS) substrates are presented in this study. A 'coupled' concentric ring structure has been designed, fabricated, tuned, and compared to an 'etched' concentric ring structure and plain gold film via SERS experiments. The proposed design gives Raman signal intensity 630 times larger than plain gold film and 8 times larger than an 'etched' concentric ring structure. The surface plasmons were imaged with the fluorescence imaging technique and supporting numerical simulations were done.
Open Access
Low temperature atomic layer deposited ZnO photo thin film transistors
(AVS Science and Technology Society, 2014) Oruc, F. B.; Aygun, L. E.; Donmez, I.; Bıyıklı, Necmi; Okyay, Ali Kemal; Yu, H. Y.
ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80°C; Ion/Ioff ratio is extracted as 7.8 × 109 and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80°C. ID-VGS characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias. © 2014 American Vacuum Society.
Open Access
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08) Haider A.; Kizir S.; Ozgit Akgun, C.; Goldenberg, E.; Leghari, S. A.; Okyay, Ali Kemal; Bıyıklı, Necmi
Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic Ga and In precursors along with N2/H2 and N2 plasma, respectively. The effect of In content on structural, optical, and morphological properties of InxGa1−xN thin films was investigated. Grazing incidence X-ray diffraction showed that all InxGa1−xN thin films were polycrystalline with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy depicted the peaks of In, Ga, and N in bulk of the film and revealed the presence of relatively low impurity contents. In contents of different InxGa1−xN thin films were determined by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. Transmission electron microscopy also confirmed the polycrystalline structure of InxGa1−xN thin films, and elemental mapping further revealed the uniform distribution of In and Ga within the bulk of InxGa1−xN films. Higher In concentrations resulted in an increase of refractive indices of ternary alloys from 2.28 to 2.42 at a wavelength of 650 nm. The optical band edge of InxGa1−xN films red-shifted with increasing In content, confirming the tunability of the band edge with alloy composition. Photoluminescence measurements exhibited broad spectral features with an In concentration dependent wavelength shift and atomic force microscopy revealed low surface roughness of InxGa1−xN films with a slight increase proportional to In content.
Open Access
Non-linear thermoelectricity and cooling effects in metallic constrictions
(Institute of Physics Publishing Ltd., 1994) Kulik, I. O.
Linear as well as non-linear contributions to the Zeebeck and Peltier coefficients of a metallic film in contact with the equilibrium metal are calculated within a simple model. The non-linear part of the thermoelectric response survives down to a very low temperature which in principle permits thermoelectric cooling at these conditions. Thermal equilibrium in a metallic constriction between dissimilar metals is evaluated in the non-linear current-carrying regime.
Open Access
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2014) Goldenberg, E.; Ozgit-Akgun, C.; Bıyıklı, Necmi; Kemal Okyay, A.
Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al xGa1-xN films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼ 85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and AlxGa1-xN were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33-1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga 2O3 formation and following phase change. The optical bandgap value of as-deposited AlxGa1-xN films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films. © 2014 American Vacuum Society.
Open Access
Quantum transport through one-dimensional aluminum wires
(American Vacuum Society, 2002) Batra, I. P.; Sen, P.; Çıracı, Salim
Quantum conductance in narrow channels has been well understood by using the two-dimensional electron gas, a model system which has been realized in semiconductor heterojunctions. An essential property of this electron gas is its ability to support a constriction of width comparable to the Fermi wavelength, a property not shared by even thin metal films. The advent of scanning tunneling microscope has made possible the fabrication of metallic wires of atomic widths. We investigate one-dimensional wires consisting of aluminum atoms, to be specific. Using the first-principles density functional calculations, we obtain the optimal structures and report the bonding as deduced from the charge density analysis. With the calculated electronic structure in hand, we discussed the quantum ballistic transport using channel capacity arguments motivated by the Heisenberg’s uncertainty principle. By comparing our results with the detailed pioneering calculations by Lang, we inferred an average value for channel transmitivity and touched upon material specific contact resistance. Finally, the validity of the Wiedemann–Franz law in the quantum domain is established by studying thermal conductance in nanowires.
Open Access
Room-temperature larger-scale highly ordered nanorod imprints of ZnO film
(Optical Society of American (OSA), 2013) Kyaw, Z.; Wang J.; Dev, K.; Tiam Tan, S.; Ju, Z.; Zhang, Z.-H.; Ji, Y.; Hasanov, N.; Liu W.; Sun X.W.; Demir, Hilmi Volkan
Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a high-temperature process. with a 600 nm pitch on top of a critical 200 nm thick Imprinting ZnO nanorods of 200 nm in diameter and 200 nm in height continuous ZnO wetting layer, the light output power of the resulting integrated ZnO-nanorod-film/semi- transparent metal/GaN/InGaN LED shows a two-fold enhancement (100% light extraction efficiency improvement) at the injection current of 150 mA, in comparison with the conventional LED without the imprint film. The increased optical output is well explained by the enhanced light scattering and outcoupling of the ZnOrod structures along with the wetting film, as verified by the numerical simulations. The wetting layer is found to be essential for better impedance matching. The current-voltage characteristics and electroluminescence measurements confirm that there is no noticeable change in the electrical or spectral properties of the final LEDs after ZnO-nanorod film integration. These results suggest that the low-cost high-quality large-scale ZnOnanorod imprints hold great promise for superior LED light extraction. ©2013 Optical Society of America.
Open Access
Seed layer assisted hydrothermal deposition of low-resistivity ZnO thin films
(Materials Research Society, 2017) Chubenko, E.; Bondarenko, V.; Ghobadi, Amir; Ulusoy, Gamze; Topallı, Kağan; Okyay, Ali Kemal
In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.
Open Access
Strong coupling between localized and propagating plasmon polaritons
(OSA - The Optical Society, 2015) Balci, S.; Karademir, E.; Kocabas, C.
We investigate plasmon-plasmon (PP) coupling in the strongly interacting regimes by using a tunable plasmonic platform consisting of triangular Ag nanoprisms placed nanometers away from Ag thin films. The nanoprisms are colloidally synthesized using a seed-mediated growth method and having size-tunable localized surface plasmon polariton (SPP) resonances immobilized on Si3N4 films. The PP coupling between the localized SPPs of metal nanoprisms and the propagating SPPs of the metal film is controlled by the nanoprism concentration and the plasmon damping in the metal film. Results reveal that Rabi splitting energy determining the strength of the coupling can reach up to several hundreds meV, thus demonstrating the ultrastrong coupling occurring between localized and propagating SPPs. The metal nanoparticle-metal thin film hybrid system over the square-centimeter areas presented here provides a unique configuration to study PP coupling all the way from the weak to ultrastrong coupling regimes in a broad range of wavelengths.
Open Access
Synthesis and optical properties of Co and Zn-based metal oxide nanoparticle thin films
(Polish Academy of Sciences, 2017) Gungor, E.; Gungor, T.; Calıskan, D.; Özbay, Ekmel
ZnO, Co doped ZnO (ZnO:Co) and CoO thin films were deposited on glass substrates by using the spark discharge technique with Zn-Zn, Zn-Co and Co-Co metal electrodes (tips). The structural and optical properties of the films were characterized by X-ray diffraction, scanning electron microscopy measurements and UV-Vis spectrometry. Cubic phase reflection of CoO (200) was observed in the samples containing Co. The size of nanoparticles had varied between 38 nm and 200 nm in ZnO thin films. When Co electrode was used, spherical structure had deteriorated and clusters of particles, with smaller radii, were observed. In addition, when Co-Co electrode pairs were used, various cavities with different sizes were formed. Especially, it was observed that the optical transmittance had generally increased with the decreasing spark (charge) voltage, while increasing with the number of sparks. The Co-containing samples were green in color and it was observed that the loss of transmission appears in a specific region in the Co-doped ZnO thin films due to characteristic d-d transition of Co2+ ions. The thickness of the films had decreased with the increasing number of sparks. In addition, the band gap energy, Eg, evaluated by UV-Vis spectroscopy measurements has been shifted to higher wavelengths (red shift) for the ZnO:Co thin films.
Open Access
Synthesis of stable mesostructured coupled semiconductor thin films: meso-CdS-TiO2 and meso-CdSe-TiO2
(2010) Okur, H. İ.; Türker, Y.; Dag, Ö.
Cd(II) ions can be incorporated into the channels of mesostructured titania films, using the evaporation-induced self-assembly (EISA) approach, up to a record high Cd/Ti mole ratio of 25%. The film samples were obtained by spin or dip coating from a mixture of 1-butanol, [Cd(H20)4] (N03)2, HNO3, and Ti(OC4H 9)4 and then aging the samples under 50% humidity at 30 0C (denoted as meso-xCd(II)-y TiO2). The nitrate ions, from nitric acid and cadmium nitrate, play important roles in the assembly process by coordinating as bidentate and bridged ligands to Cd(II) and Ti(IV) sites, respectively, in the mesostructured titania films. The film samples can be reacted under a H 2S (or H2Se) gas atmosphere to produce CdS (or CdSe) on the channel surface and/or pore walls. However, the presence of such a large number of nitrate ions in the film samples also yields an extensive amount of nitric acid upon H2S (or H2Se) reaction, where the nanoparticles are not stable (they undergo decomposition back to metal ion and H2S or H2Se gas). However, this problem can be overcome by further aging the samples at 130 °C for a few hours before H2S (or H2Se) reaction. This step removes about 90% of the nitrate ions, eliminates the nitric acid production step, and stabilizes the CdS nanoparticles on the surface and/or walls of the pores of the coupled semiconductor films, denoted as meso-xCdS-yTiO2. However, the H2Se reaction, additionally, needs to be carried at lower H2Se pressures in an N2 atmosphere to produce stable CdSe nanoparticles on the surface and/or walls of the pores of the films, denoted as meso-xCdSe-.yTiO2. Otherwise, an excessive number of Se8 particles form in the film samples.
Open Access
Theoretical and spectroscopic investigations on the structure and bonding in B-C-N thin films
(2009) Bengu, E.; Genisel, M. F.; Gulseren, O.; Ovali, R.
In this study, we have synthesized boron, carbon, and nitrogen containing films using RF sputter deposition. We investigated the effects of deposition parameters on the chemical environment of boron, carbon, and nitrogen atoms inside the films. Techniques used for this purpose were grazing incidence reflectance-Fourier-transform infrared spectroscopy (GIR-FTIR), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). GIR-FTIR experiments on the B-C-N films deposited indicated presence of multiple features in the 600 to 1700 cm- 1 range for the infrared (IR) spectra. Analysis of the IR spectra, XPS and the corresponding EELS data from the films has been done in a collective manner. The results from this study suggested even under nitrogen rich synthesis conditions carbon atoms in the B-C-N films prefer to be surrounded by other carbon atoms rather than boron and/or nitrogen. Furthermore, we have observed a similar behavior in the chemistry of B-C-N films deposited with increasing substrate bias conditions. In order to better understand these results, we have compared and evaluated the relative stability of various nearest-neighbor and structural configurations of carbon atoms in a single BN sheet using DFT calculations. These calculations also indicated that structures and configurations that increase the relative amount of C-C bonding with respect to B-C and/or C-N were energetically favorable than otherwise. As a conclusion, carbon tends to phase-segregate in to carbon clusters rather than displaying a homogeneous distribution for the films deposited in this study under the deposition conditions studied.
Open Access
UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes
(IOP Publishing, 2013) Alkis, S.; Tekcan, B.; Nayfeh, A.; Okyay, Ali Kemal
We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.