UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

Date
2013
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Source Title
Journal of Optics (United Kingdom)
Print ISSN
2040-8978
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Publisher
IOP Publishing
Volume
15
Issue
10
Pages
Language
English
Type
Article
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Abstract

We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

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Keywords
Atomic layer deposition, Photodiodes, Heterojunction diodes, Light illumination, On/off ratio, Photodetectors (PDs), Photoluminescence spectrum, Photoresponsivity, ZnO, ZnO thin film, Deposition, Electric rectifiers, Heterojunctions, Metallic films
Citation
Published Version (Please cite this version)