Seed layer assisted hydrothermal deposition of low-resistivity ZnO thin films

Date
2017
Authors
Chubenko, E.
Bondarenko, V.
Ghobadi, Amir
Ulusoy, Gamze
Topallı, Kağan
Okyay, Ali Kemal
Advisor
Instructor
Source Title
MRS Advances
Print ISSN
2059-8521
Electronic ISSN
Publisher
Materials Research Society
Volume
2
Issue
14
Pages
799 - 804
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.

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Other identifiers
Book Title
Keywords
Atomic layer deposition, Hydrothermal, Luminescence, Defects, Deposition, Film growth, II-VI semiconductors, Luminescence, Metallic films, Nanorods, Photoluminescence, Thin films, Zinc oxide, Band-to-band recombination, Continuous layers, Crystalline lattice, hydrothermal, Hydrothermal deposition, Photoluminescence spectrum, Radiative recombination process, Vertically aligned, Atomic layer deposition
Citation
Published Version (Please cite this version)