Browsing by Subject "Indium arsenide"
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Item Open Access Electro-optic modulation of InAs quantum dot waveguides(Technische Universiteit Eindhoven, 2008) Akça, İmran. B.; Dâna, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li, L.; Fiore, A.; Dağlı, N.The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.Item Open Access Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures(IEEE, 2007) Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Dagli, N.; Fiore, A.The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.Item Open Access Modulation in InAs quantum dot waveguides(Optical Society of America, 2007) Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Fiore, A.; Dagli, N.Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.Item Open Access Modulation of multilayer InAs quantum dot waveguides under applied electric field(Optical Society of America, 2007) Akça, Imran B.; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Fiore, A.; Dagli, N.Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.