Modulation of multilayer InAs quantum dot waveguides under applied electric field

Files

Modulation of multilayer InAs quantum dot waveguides under applied electric field.pdf (72.61 KB)

Date

2007

Authors

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

BUIR Usage Stats
2
views
29
downloads

Citation Stats

  • Share

Series

Abstract

Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.

Source Title

Frontiers in Optics 2007/Laser Science XXIII/Organic Materials and Devices for Displays and Energy Conversion

Publisher

Optical Society of America

Course

Other identifiers

Book Title

Keywords

Electric fields, Indium arsenide, Modulation, Semiconductor quantum dots, Electric field dependence, Electro optic coefficient, Electro-absorption, InAs quantum dots, Self-assembled, Waveguides

Degree Discipline

Degree Level

Degree Name

Citation

Permalink

http://hdl.handle.net/11693/27132

Published Version (Please cite this version)

https://doi.org/10.1364/FIO.2007.FMD3

Collections

Scholarly Publications - Physics
Scholarly Publications - UNAM

Language

English

Type

Conference Paper