Modulation in InAs quantum dot waveguides

Date
2007
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light
Print ISSN
2162-2701
Electronic ISSN
Publisher
Optical Society of America
Volume
Issue
Pages
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Series
Abstract

Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.

Course
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Book Title
Keywords
Indium arsenide, Molecular beam epitaxy, Nanophotonics, Photonics, Semiconductor quantum dots, Waveguides, Electro optic coefficient, GaAs, InAs quantum dots, Self-assembled, Modulation
Citation
Published Version (Please cite this version)