Modulation in InAs quantum dot waveguides

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Modulation in InAs quantum dot waveguides.pdf (194.61 KB)

Date

2007

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Abstract

Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.

Source Title

Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light

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Optical Society of America

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Keywords

Indium arsenide, Molecular beam epitaxy, Nanophotonics, Photonics, Semiconductor quantum dots, Waveguides, Electro optic coefficient, GaAs, InAs quantum dots, Self-assembled, Modulation

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http://hdl.handle.net/11693/27122

Published Version (Please cite this version)

https://doi.org/10.1364/IPNRA.2007.IWE4

Collections

Scholarly Publications - Physics
Scholarly Publications - UNAM

Language

English

Type

Conference Paper