Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

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Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures.pdf (282.05 KB)

Date

2007

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Source Title

2007 Quantum Electronics and Laser Science Conference

Print ISSN

2162-2701

Electronic ISSN

Publisher

IEEE

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Language

English

Type

Conference Paper

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Abstract

The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.

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Keywords

Electrooptical devices , Molecular beam epitaxy , Semiconductor quantum dots , Electro optic coefficient , GaAs , InAs quantum dots , Laser structures , Linear electro-optic coefficients , Reverse bias , Indium arsenide

Citation

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http://hdl.handle.net/11693/27121

item.page.isversionof

http://dx.doi.org/10.1109/QELS.2007.4431212

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Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)