Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

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Abstract

The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.

Source Title

2007 Quantum Electronics and Laser Science Conference

Publisher

IEEE

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Citation

Published Version (Please cite this version)

Language

English