Electro-optic modulation of InAs quantum dot waveguides

Date

2008

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Source Title

Proceedings of the 14th European Conference on Integrated Optics, ECIO 2008

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Technische Universiteit Eindhoven

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Pages

185 - 188

Language

English

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Abstract

The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.

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Published Version (Please cite this version)