Electro-optic modulation of InAs quantum dot waveguides

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Electro-optic modulation of InAs quantum dot waveguides.pdf (389.68 KB)

Date

2008

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Abstract

The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.

Source Title

Proceedings of the 14th European Conference on Integrated Optics, ECIO 2008

Publisher

Technische Universiteit Eindhoven

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Keywords

Indium arsenide, Integrated circuits, Integrated optics, Modulation, Optical materials, Optical waveguides, Photonics, Quantum electronics, Waveguides, InAs/GaAs, Optic modulations, Optic properties, Quantum dots, Semiconductor quantum dots

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http://hdl.handle.net/11693/26818

Published Version (Please cite this version)

Collections

Scholarly Publications - Physics
Scholarly Publications - UNAM

Language

English

Type

Conference Paper