Browsing by Subject "Electric properties"

Now showing 1 - 14 of 14

Open Access
Charging / discharging of thin PS / PMMA films as probed by dynamic x-ray photoelectron spectroscopy
(2007) Sezen, H.; Ertas, G.; Dâna, A.; Süzer, Şefik
Polystyrene / polymethyl methacrylate (PS-PMMA) thin films were analyzed for detecting phase separation as well as probing their electrical responses by XPS. It was also shown that electrical parameters like resistance or capacitance can also be extracted using dynamical XPS measurements. A Kratos ES300 electron spectrometer was used for XPS measurements, and a nearby filament provided low-energy electrons for charge neutralization. The results show that under a positive stress, low-energy electrons are attracted to the sample and yield less positive charge on the sample, due to partial neutralization.
Open Access
Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors
(Elsevier, 2013) Chen W.; McCarthy, K.G.; O'Brien, S.; Çopuroǧlu, Mehmet; Cai, M.; Winfield, R.; Mathewson, A.
This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, such as dielectric constant and loss tangent, are shown to depend strongly on the annealing temperature, with the best electrical properties being achieved at the highest annealing temperature. It is seen that the perovskite phase is highest in the sample annealed at 750 C indicating that a relatively high temperature is necessary for complete transition of PMNT to the perovskite phase. The sample annealed at 400 C exhibits the lowest loss tangent of approximately 0.007 at a frequency of 1 MHz. © 2012 Elsevier B.V.
Open Access
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014) Altuntas, H.; Donmez, I.; Ozgit Akgun, C.; Bıyıklı, Necmi
In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed under N2 ambient at 600, 700, and 800 C to obtain β-phase. The structure and microstructure of the β-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of β-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/β-Ga2O3/p-Si metal-oxide- semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the β-Ga2O3 thin films were annealed at 800 C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (RS), ideality factor (n), zero-bias barrier height (Bo), and interface states (NSS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (ESS-EV) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (e), and RS into account. Also using the Norde function and C-V technique, e values were calculated and cross-checked. Results show that β-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and β-Ga2O3 oxide layer.
Open Access
Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009) Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S.
The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.
Open Access
Electronic transport through a kink in an electron waveguide
(Institute of Electrical and Electronics Engineers, 1994) Yalabik, M. C.
The current-voltage denendence correspondinp to electronic transport through a kink in an electronic waveguide is analyzed. No phase breaking dissipation mechanisms are considered, but the effects of the Coulomb interaction are included through a self consistent approximation. The results indicate very nonlinear transport properties, including negative differential resistance and bistability. © 1994 IEEE
Open Access
Experimental and finite element analysis of EDM process and investigation of material removal rate by response surface methodology
(2013) Hosseini Kalajahi, M.; Rash Ahmadi, S.; Nadimi Bavil Oliaei, S.
In this study, thermal modeling and finite element simulation of electrical discharge machining (EDM) has been done, taking into account several important aspects such as temperature-dependent material properties, shape and size of the heated zone (Gaussian heat distribution), energy distribution factor, plasma flushing efficiency, and phase change to predict thermal behavior and material removal mechanism in EDM process. Temperature distribution on the cathode has been calculated using ANSYS finite element code, and the effect of EDM parameters on heat distribution along the radius and depth of the workpiece has been obtained. Temperature profiles have been used to calculate theoretical material removal rate (MRR) from the cathode. Theoretically calculated MRRs are compared with the experimental results, making it possible to precisely determine the portion of energy that enters the cathode for AISI H13 tool steel. Also in this paper, the effect of EDM parameters on MRR has been investigated by using the technique of design of experiments and response surface methodology. Finally, a quadratic polynomial regression model has been proposed for MRR, and the accuracy of this model has been checked by means of analysis of residuals. © 2013 Springer-Verlag London.
Open Access
Extracting power from sub-wavelength apertures by using electrically small resonators: Phenomenology, modeling, and applications
(IEEE, 2012) Bilotti F.; Di Palma L.; Ramaccia, D.; Toscano, A.; Vegni L.; Ateş, Damla; Özbay, Ekmel
In this contribution, we review our recent work on the extraction of the electromagnetic power from electrically small apertures by using metamaterial-inspired resonators. First, we present an antenna interpretation of the power transmission through sub-wavelength apertures and discuss the questioned concept of 'enhanced transmission'. Then, we present the so-called 'connected bi-omega particle' and the related analytical model. After that, exploiting proper numerical and experimental examples, we also show that the electromagnetic response of such a particle is not influenced by the surrounding environment. This unique property makes the particle a suitable candidate for the implementation of microwave components based on the selective power extraction from electrically small apertures. Finally, the application of the proposed concepts to the design of innovative microwave components, such as waveguide filters, diplexers, power-splitters, modal filters, horn antennas, etc. will be considered and demonstrated through proper numerical and experimental results. © 2012 IEEE.
Open Access
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010) Arslan, E.; Şafak, Y.; Taşçioğlu, I.; Uslu, H.; Özbay, Ekmel
The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage measurements in the wide frequency (5kHz-5 MHz) and temperature (80-400 K) range. The experimental values of the dielectric constant (ε'), dielectric loss (ε' '), loss tangent (tand), σ ac and the real and imaginary part of the electric modulus (M' and M' ') were found to be a strong function of frequency and temperature. A decrease in the values of ε' and ε' ' was observed, in which they both showed an increase in frequency and temperature. The values of M' and M' ' increase with increasing frequency and temperature. The σ ac increases with increasing frequency, while it decreases with increasing temperature. It can be concluded, therefore, that the interfacial polarization can occur more easily at low frequencies and temperatures with the number of interface states density located at the metal/semiconductor interface. It contributes to the e' and σ ac. © 2009 Elsevier B.V. All rights reserved.
Open Access
Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
(2006) Yu H.; Caliskan, D.; Özbay, Ekmel
Semi-insulating character (sheet resistivity of 3.26 × 10 11 Ω/sq) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor (HEMT) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. © 2006 American Institute of Physics.
Open Access
Lineshapes, shifts and broadenings in dynamical X-ray photoelectron spectroscopy
(2009) Dâna, A.
We describe in detail a model that can be used to estimate the X-ray photoelectron spectroscopic data of surfaces when a time varying bias or a modulation of the electrical properties of the surface is applied by external stimulation, in the presence of a neutralizing electron beam. Using the model and spectra recorded under periodic sample bias modulation, certain electronic properties related to charging dynamics of the surface can be estimated. The resulting technique is a non-contact impedance measurement technique with chemical specificity. Typical behavior of spectra under a square wave bias is given. Alternative modulation schemes are investigated, including small-signal square wave modulation, sinusoidal modulation and modulation of sample resistivity under fixed bias. © 2009 Elsevier B.V. All rights reserved.
Open Access
RF radiometery sensor sensitivity and detection profile
(IEEE, 2008-11) El-Sharkawy, A.-M.M.; Sotiriadis, P. P.; Bottomley, P. A.; Atalar, Ergin
Temperature sensing using microwave radiometry has proven value for non-invasively measuring the absolute temperature of tissues inside the human body. However, current clinical radiometers operate in GHz or infrared frequency ranges; this limits their depth of penetration since the human body is not "transparent" at these frequencies. To address this problem, we have previously designed and built an advanced, near-field radiometer operating at VHF frequencies (64MHz) with a ∼100 KHz bandwidth. The radiometer has performed accurate temperature measurements to within ±0.1°C, over a tested physiological range of 28-40°C in saline phantoms whose electric properties match those of human tissue. In this work we analyze radiofrequency (RF) coil designs suitable for RF Radiometry. We investigate the coil profile sensitivity to look where temperature information is coming from and the depth of penetration associated with the receiver used. We also look into the virtues of using multi-turn coils versus single loop coils. We conclude that by using multi-turn coils the received noise signal is more sensitive to sample noise and temperature can be estimated more accurately especially with the use of smaller receivers. © 2008 IEEE.
Open Access
Room-temperature larger-scale highly ordered nanorod imprints of ZnO film
(Optical Society of American (OSA), 2013) Kyaw, Z.; Wang J.; Dev, K.; Tiam Tan, S.; Ju, Z.; Zhang, Z.-H.; Ji, Y.; Hasanov, N.; Liu W.; Sun X.W.; Demir, Hilmi Volkan
Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a high-temperature process. with a 600 nm pitch on top of a critical 200 nm thick Imprinting ZnO nanorods of 200 nm in diameter and 200 nm in height continuous ZnO wetting layer, the light output power of the resulting integrated ZnO-nanorod-film/semi- transparent metal/GaN/InGaN LED shows a two-fold enhancement (100% light extraction efficiency improvement) at the injection current of 150 mA, in comparison with the conventional LED without the imprint film. The increased optical output is well explained by the enhanced light scattering and outcoupling of the ZnOrod structures along with the wetting film, as verified by the numerical simulations. The wetting layer is found to be essential for better impedance matching. The current-voltage characteristics and electroluminescence measurements confirm that there is no noticeable change in the electrical or spectral properties of the final LEDs after ZnO-nanorod film integration. These results suggest that the low-cost high-quality large-scale ZnOnanorod imprints hold great promise for superior LED light extraction. ©2013 Optical Society of America.
Open Access
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010) Ocak, Y.S.; Genisel, M.F.; Kiliçoǧlu, T.
Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current voltage (I-V) measurements. It has seen that the diodes have ideality factors more than unity and the sum of their barrier heights is 1.21 eV which is higher than the band gap of the silicon (1.12 eV). The results have been attributed the effects of inhomogeneities at the interface of the devices and native oxide layer. In addition, the barrier height values determined using capacitance-voltage (C-V) measurements have been compared the ones obtained from I-V measurements. It has seen that the interface states have strong effects on electrical properties of the diodes such as C-V and Rs-V measurements. © 2010 Elsevier Ltd. All rights reserved.
Open Access
Temperature-and excitation intensity-dependent photoluminescence in TlInSeS single crystals
(American Institute of Physics, 2002) Gasanly, N. M.; Aydınlı, Atilla; Yuksek, N. S.
Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T = 10 K and an excitation intensity of 7.5 W cm-2. We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm-2. The red shift of this band with increasing temperature and blue shift with increasing laser excitation intensity was observed. The PL was found to be due to radiative transitions from the moderately deep donor level located at 0.243 eV below the bottom of the conduction band to the shallow acceptor level at 0.023 eV located above the top of the valence band. The proposed energy-level diagram permits us to interpret the recombination processes in TlInSeS layered single crystals.