Ta/Si Schottky diodes fabricated by magnetron sputtering technique

Date
2010
Authors
Ocak, Y.S.
Genisel, M.F.
Kiliçoǧlu, T.
Advisor
Instructor
Source Title
Microelectronic Engineering
Print ISSN
1679317
Electronic ISSN
Publisher
Volume
87
Issue
11
Pages
2338 - 2342
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current voltage (I-V) measurements. It has seen that the diodes have ideality factors more than unity and the sum of their barrier heights is 1.21 eV which is higher than the band gap of the silicon (1.12 eV). The results have been attributed the effects of inhomogeneities at the interface of the devices and native oxide layer. In addition, the barrier height values determined using capacitance-voltage (C-V) measurements have been compared the ones obtained from I-V measurements. It has seen that the interface states have strong effects on electrical properties of the diodes such as C-V and Rs-V measurements. © 2010 Elsevier Ltd. All rights reserved.

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Other identifiers
Book Title
Keywords
Barrier height, Schottky diodes, Series resistance, Sputtering, Tantalum, Band gaps, Barrier heights, Capacitance voltage measurements, Characteristic parameter, Current voltage, Electrical property, I-V measurements, Ideality factors, Inhomogeneities, Interface state, Native oxide layer, Schottky diodes, Series resistance, Series resistances, Electric properties, Semiconducting silicon compounds, Semiconductor diodes, Tantalum, Schottky barrier diodes
Citation
Published Version (Please cite this version)