Browsing by Subject "Capacitors"

Now showing 1 - 17 of 17

Open Access
Analytic modeling of loss and cross-coupling in capacitive micromachined ultrasonic transducers
(IEEE, Piscataway, NJ, United States, 1998) Bozkurt, A.; Degertekin, F. L.; Atalar, Abdullah; Khuri-Yakub, B. T.
The structural loss mechanism of capacitive micromachined ultrasonic transducer (cMUT) is investigated using finite element analysis and the normal mode theory. A single micromachined transducer membrane on an infinite silicon substrate is simulated by incorporating absorbing boundary conditions in the finite element method. This enables direct evaluation of the mechanical impedance of the membrane. Furthermore, the field distribution along the thickness of the silicon substrate due to outward radiating wave modes is obtained. The normal mode theory is applied to extract the contributions of different wave modes to the complicated field distributions. It is found that, the lowest order Lamb wave modes are responsible for the loss. Evaluation of absolute and relative power losses due to individual modes indicate that the lowest order anti-symmetric (A0) mode is the dominant radial mode in agreement with experimental measurements. The results of the analysis are used to derive a detailed equivalent circuit model of a cMUT with structural loss.
Open Access
Biquadratic transconductance switched-capacitor filters
(IEEE, 1993-04) Tan, M. A.
Switched-capacitor (SC) filters yield efficient implementations in integrated form. However, they employ op-amps, each of which must be designed for a given filter separately. Furthermore, SC filters are not tunable. This work presents a new type of sampled data filters consisting of transconductance elements, switches and capacitors, called transconductor switched capacitor (TSC) filters. Transconductance elements do not degrade their performance within a wide frequency range and tunable ones are available.
Open Access
Broadband terahertz modulators using self-gated graphene capacitors
(Optical Society of America, 2015) Kakenov, N.; Balci, O.; Polat, E. O.; Altan, H.; Kocabas, C.
We demonstrate a terahertz intensity modulator using a graphene supercapacitor which consists of two large-area graphene electrodes and an electrolyte medium. The mutual electrolyte gating between the graphene electrodes provides very efficient electrostatic doping with Fermi energies of 1 eV and a charge density of 8 × 1013 cm-2. We show that the graphene supercapacitor yields more than 50% modulation between 0.1 and 1.4 THz with operation voltages less than 3 V. The low insertion losses, high modulation depth over a broad spectrum, and the simplicity of the device structure are the key attributes of graphene supercapacitors for THz applications.
Open Access
Circuit theoretical method for efficient finite element analysis of acoustical problems
(IEEE, 1998) Ekinci, A. Suat; Atalar, Abdullah
In the last decade, there has been an outstanding improvement in the computer aided design tools for VLSI circuits regarding solution times and the circuit complexity. This study proposes formulating the acoustic field analysis problem using FEM, and employing the recent speed-up techniques used in the circuit simulators. In this work, total mass, stiffness and damping matrices are obtained using the FE approach, and piped into a computer program which generates an equivalent SPICE compatible circuit netlist. This approach makes it possible to use the most recent circuit simulation techniques to simulate the acoustical problems. The equivalent electrical circuit is a resistor-inductor-capacitor (RLC) circuit containing controlled sources to handle the couplings. The circuit matrices are 6 times larger but are sparser. We analyze these circuits with a general-purpose circuit simulation program, HSPICE, which provides high accuracy solutions in a short time. We also use an in-house developed circuit simulation program, MAWE, which makes use of asymptotic waveform evaluation (AWE) technique that has been successfully used in circuit simulation for solutions of large sets of equations. The results obtained on several problems, which are solved in time and frequency domains using circuit simulators and the FE analysis program ANSYS, match each other pretty well. Using circuit simulators instead of conventional method improves simulation speed without a significant loss of accuracy.
Open Access
Comparative operando XPS and SEM spatiotemporal potential mapping of ionic liquid polarization in a coplanar electrochemical device
(American Chemical Society, 2021-09-21) Suzer, Sefik; Strelcov, E.; Kolmakov, A.
The polarization response of a coplanar electrochemical capacitor covered with an ionic liquid as the electrolyte has been examined using a combination of two powerful analytic techniques, X-ray photoelectron spectroscopy (XPS) and scanning electron microcopy (SEM). Spatiotemporal distribution of the ionic liquid surface potential, upon DC or AC (square wave) biasing, has been monitored via chemical element binding energy shifts using XPS and secondary electron intensity variations using SEM. SEM’s high spatial resolution and speedy imaging together with application of a data mining algorithm made mapping of the surface potential distribution across the capacitor possible. Interestingly, despite the differences in the detection principles, both techniques yield similar polarization relaxation time constants. The results demonstrate the power of a synergistic combination of the two techniques with complementary capabilities and pave the way to a deeper understanding of liquid/solid interfaces and for performance evaluation and diagnostics of electrochemical devices.
Open Access
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
(A I P Publishing LLC, 2015) Altuntas, H.; Ozgit Akgun, C.; Donmez, I.; Bıyıklı, Necmi
Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.
Open Access
Design considerations for MMIC distributed amplifiers
(IEEE, 1994) Ergun, Şanlı; Atalar, Abdullah
The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated.
Open Access
Design of all-pole low-pass ladder filters using current-mode damped integrators
(IEEE, 1996) Oralkan, Ömer; Karşılayan, Aydın İlker; Tan, M. A.
A method for operational simulation of all-pole low-pass LC ladders filters by using current-mode damped integrators is introduced. The circuits obtained by this method need only current mirrors and capacitors and are convenient for realization in CMOS technology as well as can be used in other technologies.
Open Access
Graphene supercapacitor as a voltage controlled saturable absorber for femtosecond pulse generation
(OSA, 2014) Baylam, I.; Çizmeciyan, M. N.; Özharar, S.; Polat, Emre Ozan; Kocabaş, Coşkun; Sennaroğlu, A.
For the first time to our knowledge, we employed a graphene supercapacitor as a voltage controlled saturable absorber at bias voltages of 0.5-1V to generate 84-fs pulses from a solid-state laser near 1255 nm.
Open Access
Graphene-gold supercapacitor as a voltage controlled saturable absorber for femtosecond pulse generation
(Optical Society of America, 2016-02) Baylam, I.; Balci, O.; Kakenov, N.; Kocabas, C.; Sennaroglu, A.
We report, for the first time to the best of our knowledge, use of a graphene-gold supercapacitor as a voltage controlled fast saturable absorber for femtosecond pulse generation. The unique design involving only one graphene electrode lowers the insertion loss of the device, in comparison with capacitor designs with two graphene electrodes. Furthermore, use of the high-dielectric electrolyte allows reversible, adjustable control of the absorption level up to the visible region with low bias voltages of only a few volts (0-2 V). The fast saturable absorber action of the graphene-gold supercapacitor was demonstrated inside a multipass-cavity Cr:forsterite laser to generate nearly transform-limited, sub-100 fs pulses at a pulse repetition rate of 4.51 MHz at 1.24 μm.
Open Access
Graphene-gold supercapacitor as a voltage-controlled saturable absorber for femtosecond pulse generation
(OSA, 2015) Baylam, I.; Balcı, Osman; Kakenov, Nurbek; Kocabaş, Coşkun; Sennaroğlu, A.
We report, for the first time to our knowledge, a voltage-controlled graphene-gold supercapacitor saturable absorber, as a modulator with adjustable insertion loss for low-gain mode-locked lasers. Nearly transform-limited, 80-fs pulses were generated near 1240 nm.
Open Access
High-speed resonant-cavity-enhanced Schottky photodiodes
(IEEE, 1998) Ata, Erhan P.; Bıyıklı, Necmi; Demirel, Ekrem; Özbay, Ekmel; Gökkavas, M.; Onat, B.; Ünlü, M. S.; Tuttle, G.
The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method.
Open Access
Investigation of magnetic resonances for different split-ring resonator parameters and designs
(Institute of Physics Publishing, 2005) Aydin, K.; Bulu, I.; Guven, K.; Kafesaki, M.; Soukoulis, C. M.; Özbay, Ekmel
We investigate the magnetic resonance of split-ring resonators (SRR) experimentally and numerically. The dependence of the geometrical parameters on the magnetic resonance frequency of SRR is studied. We further investigate the effect of lumped capacitors integrated to the SRR on the magnetic resonance frequency for tunable SRR designs. Different resonator structures are shown to exhibit magnetic resonances at various frequencies depending on the number of rings and splits used in the resonators.
Open Access
Methods for probing charging properties of polymeric materials using XPS
(2010) Sezen, H.; Ertas, G.; Süzer, Şefik
Various thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, and three different forms of (square-wave (SQW), sinusoidal (SIN) and triangular (TRG)), a.c. pulses. All films exhibit charging shifts as observed in the position of the corresponding C1s peak under d.c. bias. The a.c. pulses convert the single C1s peak to twinned peaks in the case of the square-wave form, and distort severely in the cases of the SIN, and TRG forms, and all three of them exhibit strong frequency dependence. In order to mimic and better understand the behavior of these polymeric materials, an artificial dielectric system consisting of a clean Si-wafer coupled to an external 1 MΩ resistor and 56 nF capacitor is created, and its response to different forms of voltage stimuli, is examined in detail. A simple electrical circuit model is also developed treating the system as consisting of a parallel resistor and a series capacitor. With the help of the model, the response of the artificial system is successfully calculated as judged by comparison with the experimental data. Using one high frequency SQW measurements, the off-set in the charging shift due to the extra low-energy neutralizing electrons is estimated. After correcting the corresponding off-set shifts, the XPS spectra of the three different PS films, one PMMA, and one PS + PMMA blend film are re-examined. As a result of these detailed analysis, there emerges a clear relationship between the thicknesses of the PS films with their charging abilities. In the blend film, PS and PMMA domains are electrically separated, and exhibit different charging shifts, however, the presence of one is felt by the other. Hence, the PS component shifts are larger in the blend, due to the presence of PMMA domains, which has intrinsically a larger Reff, and conversely the PMMA component shifts are smaller due to the presence of PS domains.
Open Access
A new detection method for capacitive micromachine ultrasonic transducers
(IEEE, 2001) Ergun, A. S.; Temelkuran, B.; Özbay, Ekmel; Atalar, Abdullah
Capacitive micromachine ultrasonic transducers (cMUT) have become an alternative to piezoelectric transducers in the past few years. They consist of many small circular membranes that are connected in parallel. In this work, we report a new detection method for cMUTs. We model the membranes as capacitors and the interconnections between the membranes as inductors. This kind of LC network is called an artificial transmission line. The vibrations of the membranes modulate the electrical length of the transmission line, which is proportional to the frequency of the signal through it. By measuring the electrical length of the artificial line at a high RF frequency (in the gigahertz range), the vibrations of the membranes can be detected in a very sensitive manner. For the devices we measured, we calculated the minimum detectable displacement to be in the order of 10 -5 Å/√Hz with a possible improvement to 10 -7 Å/√Hz.
Open Access
A new detection method for capacitive micromachined ultrasonic transducers
(IEEE, 1998) Ergun, A. S.; Temelkuran, B.; Özbay, Ekmel; Atalar, Abdullah
Capacitive micromachined ultrasonic transducers (cMUT) have become an alternative to piezoelectric transducers in the past few years. They usually consist of many small membranes all in parallel. In this work we report a new detection method for cMUT's. We arrange the membranes in the form of an artificial transmission line by inserting small inductances between the membranes. The vibrations of the membranes modulate the electrical length of the transmission line, which is proportional to the total capacitance and the frequency of the signal through it. By measuring the electrical length of the artificial line at a RF frequency in the GHz range, the vibrations of the membranes can be detected in a very sensitive manner. For the detector structure we considered a minimum detectable displacement in the order of 10-7 angstroms/√Hz is expected.
Open Access
A reduction in the number of active components used in transconductance grounded capacitor filters
(IEEE, 1990) Tan, Mehmet Ali; Schaumann, R.
The number of active components in transconductance grounded capacitor filters is reduced. This reduction is possible in the case where capacitor loops and/or inductor cutsets exist in LC-ladder prototype. A more significant reduction is obtained in the OTA-C (operational transductance amplifier-capacitor version. The number of OTAs is reduced to 7 from 13 while the total capacitance value remains intact. It is also important to note that all transconductance elements or OTAs are identical except possibly one. The only drawback of this reduction is implementation of some floating capacitors instead of all grounded capacitors.