Broadband terahertz modulators using self-gated graphene capacitors

Date

2015

Authors

Kakenov, N.
Balci, O.
Polat, E. O.
Altan, H.
Kocabas, C.

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Source Title

Journal of the Optical Society of America B: Optical Physics

Print ISSN

0740-3224

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Publisher

Optical Society of America

Volume

32

Issue

9

Pages

1861 - 1866

Language

English

Type

Article

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Abstract

We demonstrate a terahertz intensity modulator using a graphene supercapacitor which consists of two large-area graphene electrodes and an electrolyte medium. The mutual electrolyte gating between the graphene electrodes provides very efficient electrostatic doping with Fermi energies of 1 eV and a charge density of 8 × 1013 cm-2. We show that the graphene supercapacitor yields more than 50% modulation between 0.1 and 1.4 THz with operation voltages less than 3 V. The low insertion losses, high modulation depth over a broad spectrum, and the simplicity of the device structure are the key attributes of graphene supercapacitors for THz applications.

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Keywords

Capacitors, Electrodes, Electrolytes, Graphene, Graphite electrodes, Modulation, Modulators, Broadband terahertz, Electrostatic doping, Graphene electrodes, Intensity modulators, Large-area graphene, Low insertion loss, Modulation depth, Operation voltage, Electrolytic capacitors

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Published Version (Please cite this version)