Browsing by Author "Tuttle, G."
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Item Open Access 1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector(IEEE, Piscataway, NJ, United States, 2000) Necmi, B.; Kimukin, I.; Özbay, Ekmel; Tuttle, G.GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.Item Open Access Defect structures in a layer-by-layer photonic band-gap crystal(American Physical Society, 1995) Özbay, Ekmel; Tuttle, G.; Sigalas, M.; Soukoulis, C. M.; Ho, K. M.We have experimentally and theoretically investigated defect structures that are incorporated into a three-dimensional layer-by-layer photonic band-gap crystal. The defects are formed by either adding or removing dielectric material to or from the crystal. For both cases, we observed localized modes with frequencies that lie within the forbidden band gap of the pure crystal. Relatively high peak transmission (10 dB below the incident signal), and high quality factors (2000) have been measured. These measurements were in good agreement with theoretical simulations. Theoretical calculations also predict very high (Q>106) quality factors for certain cavity structures. © 1995 The American Physical Society.Item Open Access Defect structures in metallic photonic crystals(A I P Publishing LLC, 1996-12-16) Özbay, Ekmel; Temelkuran, B.; Sigalas, M.; Tuttle, G.; Soukoulis, C. M.; Ho, K. M.We have investigated metallic photonic crystals built around a layer‐by‐layer geometry. Two different crystal structures (face‐centered‐tetragonal and tetragonal) were built and their properties were compared. We obtained rejection rates of 7–8 dB per layer from both metallic crystals. Defect modes created by removing rods resulted in high peak transmission (80%), and high quality factors (1740). Our measurements were in good agreement with theoretical simulations.Item Open Access Fabrication of high-speed resonant cavity enhanced schottky photodiodes(Institute of Electrical and Electronics Engineers, 1997-05) Özbay, Ekmel; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S.We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.Item Open Access High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector(IEEE, 2000) Kimukin, İbrahim; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Tuttle, G.Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonator. The increased field allows the use of a thin absorbing layer, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. Recently, we fabricated high-speed RCE p-i-n and Schottky photodetectors, where a 90% quantum efficiency along with a 3-dB bandwidth of 50 GHz has been reported. We used the transfer matrix method to design the epilayer structure and to simulate the optical properties of the photodiode. The samples were fabricated by a microwave-compatible process and high-speed measurements were made with an optical parametric oscillator.Item Open Access High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector(American Institute of Physics., 2000) Kimukin, I.; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, T.; Aytür, O.; Unlu, S.; Tuttle, G.We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics.Item Open Access High-speed high-efficiency resonant cavity enhanced photodiodes(Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States, 1999) Özbay, Ekmel; Kimukin, I.; Bıyıklı, N.; Aytür, O.; Gökkavas, M.; Ulu, G.; Ünlü, M. S.; Mirin, R. P.; Bertness, K. A.; Christensen, D. H.; Towe, E.; Tuttle, G.In this paper, we review our research efforts on RCE high-speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.Item Open Access High-speed resonant-cavity-enhanced Schottky photodiodes(IEEE, 1998) Ata, Erhan P.; Bıyıklı, Necmi; Demirel, Ekrem; Özbay, Ekmel; Gökkavas, M.; Onat, B.; Ünlü, M. S.; Tuttle, G.The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method.Item Open Access Highly directional resonant antennas built around photonic crystals(IEEE, 1999) Özbay, Ekmel; Temelkuran, Burak; Bayındır, Mehmet; Biswas, R.; Sigalas, M. M.; Tuttle, G.; Ho, K. M.We report a photonic crystal-based resonant antenna with a very high directivity and gain. The layer-by-layer dielectric photonic crystal we used in our experiments was designed to have a three dimensional band gap with a mid-gap frequency around 12 GHz. We used the output port of a microwave network analyzer and a monopole antenna to obtain EM waves. The input port of the network analyzer and a standard gain horn antenna were used to receive the radiated EM field from the monopole antenna. The receiver was kept free to rotate around the antenna. We investigated the radiation characteristics of this monopole antenna, which was inserted into the planar defect structures built around a photonic crystal that consisted of 20 layers. The planar defect was formed by separating the 8th and 9th layers of the structure. In order to suppress the radiation in the backward direction, we intentionally chose one of the mirrors of the cavity to have a higher reflectivity (/spl sim/18-20 dB) than the front mirror.Item Open Access Highly doped silicon micromachined photonic crystals(IEEE, Piscataway, NJ, United States, 2000) Temelkuran, B.; Bayındır, Mehmet; Özbay, Ekmel; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.Summary form only given. Photonic crystals are periodic structures with the property of reflecting the electromagnetic (EM) waves in all directions within a certain frequency range. These structures can be used to control and manipulate the behaviour of EM waves. Although earlier work concentrated on building these crystals with dielectric materials, there are certain advantages of introducing metals to photonic crystals. First, metals offer a high rejection rate when compared to the dielectric crystals. Second, for microwave applications, the dimensions of metallic crystals can be kept much smaller than the minimum dimensions needed for a typical dielectric crystal. In the paper, we propose a method for the fabrication of layer-by-layer metallic photonic crystals. A similar method had been used by Ozbay et al. to fabricate dielectric photonic crystals using silicon wafers. We fabricated a new layer-by-layer photonic crystal using highly doped silicon wafers.Item Open Access Laser-micromachined millimeter-wave photonic band-gap cavity structures(American Institute of Physics, 1995) Özbay, Ekmel; Tuttle, G.; McCalmont, J. S.; Sigalas, M.; Biswas, R.; Soukoulis, C. M.; Ho, K. M.We have used laser-micromachined alumina substrates to build a three-dimensional photonic band-gap crystal. The rod-based structure has a three-dimensional full photonic band gap between 90 and 100 GHz. The high resistivity of alumina results in a typical attenuation rate of 15 dB per unit cell within the band gap. By removing material, we have built defects which can be used as millimeter-wave cavity structures. The resulting quality ~Q! factors of the millimeter-wave cavity structures were as high as 1000 with a peak transmission of 10 dB below the incident signal. © 1995 American Institute of Physics.Item Open Access Microwave applications of photonic band gap structures(IEEE, 2000-10) Temelkuran, Burak; Bayındır, Mehmet; Özbay, Ekmel; Biswas, R.; Sigalas, M. M.; Tuttle, G.; Ho, K.-M.We have investigated two major applications of photonic band gap materials. We demonstrated the guiding and bending of electromagnetic waves through planar waveguides built around layer-by-layer photonic crystals. We then investigated the radiation properties of an antenna that was formed by a hybrid combination of a monopole radiation source and a cavity built around the same photonic crystal structure. © 2000 IEEE.Item Open Access Negative refraction and superlens behavior in a two-dimensional photonic crystal(American Physical Society, 2005) Moussa, R.; Foteinopoulou, S.; Zhang, L.; Tuttle, G.; Guven, K.; Özbay, Ekmel; Soukoulis, C. M.We experimentally and theoretically studied a left-handed structure based on a photonic crystal (PC) with a negative refractive index. The structure consists of triangular array of rectangular dielectric bars with dielectric constant 9.61. Experimental and theoretical results demonstrate the negative refraction and the superlensing phenomena in the microwave regime. The results show high transmission for our structure for a wide range of incident angles. Furthermore, surface termination within a specific cut of the structure excite surface waves at the interface between air and PC and allow the reconstruction of evanescent waves for a better focus and better transmission. The normalized average field intensity calculated in both the source and image planes shows almost the same full width at half maximum for the source and the focused beam.Item Open Access Optimized dipole antennas on photonic band gap crystals(American Institute of Physics, 1995) Cheng, S. D.; Biswas, R.; Özbay, Ekmel; McCalmont, S.; Tuttle, G.; Ho, K.-M.Photonic band gap crystals have been used as a perfectly reflecting substrate for planar dipole antennas in the 12-15 GHz regime. The position, orientation, and driving frequency of the dipole antenna on the photonic band gap crystal surface, have been optimized for antenna performance and directionality. Virtually no radiated power is lost to the photonic crystal resulting in gains and radiation efficiencies larger than antennas on other conventional dielectric substrates.© 1995 American Institute of Physics.Item Open Access Photonic crystal-based resonant antenna with a very high directivity(American Institute of Physics, 2000-09-24) Temelkuran, B.; Bayındır, Mehmet; Özbay, Ekmel; Biswas, R.; Sigalas, M. M.; Tuttle, G.; Ho, K. M.We investigate the radiation properties of an antenna that was formed by a hybrid combination of a monopole radiation source and a cavity built around a dielectric layer-by-layer three-dimensional photonic crystal. We measured a maximum directivity of 310, and a power enhancement of 180 at the resonant frequency of the cavity. We observed that the antenna has a narrow bandwidth determined by the cavity, where the resonant frequency can be tuned within the band gap of the photonic crystal. The measured radiation patterns agree well with our theoretical results. (C) 2000 American Institute of PhysicsItem Open Access Photonic-crystal-based resonant-cavity-enhanced detectors(IEEE, 1998) Temelkuran, Burak; Özbay, Ekmel; Kavanaugh, J. P.; Tuttle, G.; Ho, K. M.A layer-by-layer three-dimensional photonic crystal, with a full photonic bandgap (PBG) in all directions is proposed. The electrical fields in the cavities of this crystal are usually enhanced, and by placing active devices such as resonant cavity enhanced (RCE) photodetectors and light emitting diodes. The RCE effect is demonstrated by placing microwave detectors within localized modes of photonic crystal, along with a monopole antenna. A network analyzer measured the enhanced field. Such RCE detectors are more sensitive and efficient as compared to conventional detectors, and can be used for various applications where sensitivity and efficiency are important parameters.Item Open Access Quasimetallic silicon micromachined photonic crystals(American Institute of Physics, 2001) Temelkuran, B.; Bayındır, Mehmet; Özbay, Ekmel; Kavanaugh, J. P.; Sigalas, M. M.; Tuttle, G.We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations. (C) 2001 American Institute of Physics.Item Open Access Reflection properties and defect formation in metallic photonic crystals(IEEE, 1998-05) Özbay, Ekmel; Temelkuran, Burak; Sigalas, M.; Tuttle, G.; Soukoulis, C. M.; Ho, K. M.The reflection properties of layer-by-layer metallic photonic crystals were investigated using metallic photonic crystals with simple-tetragonal (st) structure. The observed properties were used to predict defect formation in these crystals. The reflection and transmission amplitude characteristics were measured by a network analyzer and standard gain horn antennas. Transformation matrix method was employed for the theoretical simulations.Item Open Access Reflection properties of metallic photonic crystals(1998) Temelkuran, B.; Özbay, Ekmel; Sigalas, M.; Tuttle, G.; Soukoulis, C. M.; Ho, K. M.We measured reflection-magnitude and reflection-phase properties of metallic photonic crystals. The experimental results are in good agreement with the theoretical calculations. We converted the reflection-phase information to an effective penetration depth of the electromagnetic waves into the photonic crystal. This information was then used to predict resonance frequencies of defect structures. A symmetric resonant cavity was built, and an experimental set-up limited reflection magnitude of 80 dB below the incident signal was observed at resonance frequency.Item Open Access Resonant cavity enhanced detectors embedded in photonic crystals(American Institute of Physics, 1998) Temelkuran, B.; Özbay, Ekmel; Kavanaugh, J. P.; Tuttle, G.; Ho, K. M.We report a resonant cavity enhanced (RCE) detector built around a three-dimensional photonic band gap crystal. The RCE detector was built by placing a monopole antenna within the localized modes of planar and boxlike defectstructures. The enhanced electric field around these defectstructures were then measured by a microwave detector and a network analyzer. We measured a power enhancement factor of 3450 for planar cavity structures. A Fabry–Perot cavity model was used to understand and predict resonant cavity enhancement in this structure. The tuning bandwidth of the RCE detector extends from 10.5 to 12.8 GHz, which corresponds to the full photonic band gap by the crystal. These RCE detectors have increased sensitivity and efficiency when compared to conventional detectors, and can be used for various applications. © 1998 American Institute of Physics