High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector
Date
2000
Editor(s)
Advisor
Supervisor
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Instructor
Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
Publisher
American Institute of Physics.
Volume
77
Issue
24
Pages
3890 - 3892
Language
English
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Journal Title
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Volume Title
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Abstract
We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics.