Browsing by Author "Aytür, O."
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Item Open Access 45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes(IEEE, 2001) Bıyıklı, Necmi; Kimukin, I.; Aytür, O.; Gökkavas, M.; Ünlü, M. S.; Özbay, EkmelHigh-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.Item Open Access Analysis of Gaussian-beam degenerate optical parametric amplifiers for the generation of quadrature-squeezed states(American Physical Society, 1999-11) Köprülü, K. G.; Aytür, O.This paper investigates the generation of quadrature-squeezed states of light using a degenerate optical parametric amplifier (DOPA) that is pumped by a focused Gaussian beam. The formulation that is presented facilitates the calculation of squeezing for an arbitrary local oscillator beam. This formulation also establishes a formal equivalence between the classical parametric gain and the measured level of squeezing. The maximum squeezing that can be achieved using a Gaussian-beam local oscillator is determined to be limited to 13.4 dB, as a consequence of gain-induced diffraction. The phase lag of the maximally squeezed quadrature is shown to be significantly different from the plane-wave theoretic value of π/2, unless the focusing is very weak. The use of a second DOPA for generating a local oscillator beam that is matched to the squeezed field is also investigated. In this case, squeezing is limited only by the available pump power.Item Open Access Analysis of the generation of amplitude-squeezed light with Gaussian-beam degenerate optical parametric amplifiers(OSA Publishing, 2001-06) Köprülü, K. G.; Aytür, O.We investigate the generation of amplitude-squeezed states with degenerate optical parametric amplifiers that are pumped by focused Gaussian beams. We present a model that facilitates the calculation of the squeezing level for an experimentally realistic cofiguration in which there is a Gaussian input signal beam that has the same confocal parameter and waist location as the Gaussian pump beam, with no restriction on the interaction length-to-confocal parameter ratio. We show that the 3-dB squeezing limit that was thought to be imposed by the Gaussian pump profile can be exceeded in the (previously uninvestigated) tight-focusing regime. We find the maximum possible amplitude squeezing in this regime to be 4.65 dB. However, it is possible to increase the squeezing level further by spatially filtering the tails of the output signal beam, resulting in squeezing levels in excess of 10 dB. (C) 2001 Optical Society of America.Item Open Access Fabrication of high-speed resonant cavity enhanced schottky photodiodes(Institute of Electrical and Electronics Engineers, 1997-05) Özbay, Ekmel; Islam, M. S.; Onat, B.; Gökkavas, M.; Aytür, O.; Tuttle, G.; Towe, E.; Henderson, R. H.; Ünlü, M. S.We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.Item Open Access Femtosecond optical parametric oscillator based on periodically poled KTiOPO4(1998-01-01) Kartaloğlu, T.; Köprülü, K. G.; Aytür, O.; Sundheimer, M.; Risk, W. P.We report a femtosecond optical parametric oscillator based on a periodically poled KTiOPO4 crystal for which quasi-phase matching is achieved with a 24-μm poling period. The singly resonant parametric oscillator, synchronously pumped by a Ti:sapphire laser at a wavelength of 758 nm, generates a signal at 1200 nm and an idler at 2060 nm. The maximum signal power conversion efficiency of the device is 22% with a pump depletion of 69%. We tune the signal wavelength over a 200-nm band by changing the cavity length. In addition, pump wavelength tuning provides output tunability in the 1000-1235-nm range.Item Open Access Femtosecond self-doubling optical parametric oscillator based on KTiOAsO4(IEEE, 2003) Kartaloğlu, T.; Aytür, O.We report a femtosecond intracavity-frequency-doubled optical parametric oscillator that employs a single KTiOAsO4 crystal for both parametric generation and frequency doubling. This device generates a yellow output beam at 575 nm with 39.4% power conversion efficiency when synchronously pumped by a femtosecond Ti:sapphire laser at a wavelength of 796 nm. An intracavity retarder is employed to alleviate temporal pulse overlap problems associated with group velocity mismatch inside the KTiOAsO4 crystal.Item Open Access Fractional Fourier domains(Elsevier BV, 1995-09) Özaktaş, Haldun M.; Aytür, O.It is customary to define the time-frequency plane such that time and frequency are mutually orthogonal coordinates. Representations of a signal in these domains are related by the Fourier transform. We consider a continuum of “fractional” domains making arbitrary angles with the time and frequency domains. Representations in these domains are related by the fractional Fourier transform. We derive transformation, commutation, and uncertainty relations among coordinate multiplication, differentiation, translation, and phase shift operators between domains making arbitrary angles with each other. These results have a simple geometric interpretation in time-frequency space.Item Open Access High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures(IEEE, 2004) Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Tut, T.; Aytür, O.Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3 fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I-V) characteristics led to a detectivity performance of 4.9×1014 cmHz1/2W -1. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2×104 was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.Item Open Access High-speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm range(A I P Publishing LLC, 1999-02-22) Özbay, Ekmel; Kimukin, İ.; Bıyıklı, Necmi; Aytür, O.; Gökkavas, M.; Ulu, G.; Ünlü, M. S.; Mirin, R. P.; Bertness, K. A.; Christensen, D. H.We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.Item Open Access High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector(American Institute of Physics., 2000) Kimukin, I.; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, T.; Aytür, O.; Unlu, S.; Tuttle, G.We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics.Item Open Access High-speed high-efficiency resonant cavity enhanced photodiodes(Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States, 1999) Özbay, Ekmel; Kimukin, I.; Bıyıklı, N.; Aytür, O.; Gökkavas, M.; Ulu, G.; Ünlü, M. S.; Mirin, R. P.; Bertness, K. A.; Christensen, D. H.; Towe, E.; Tuttle, G.In this paper, we review our research efforts on RCE high-speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.Item Open Access High-Speed InSb photodetectors on GaAs for mid-IR applications(IEEE, 2004) Kimukin, I.; Bıyıklı, Necmi; Kartaloǧlu, T.; Aytür, O.; Özbay, EkmelWe report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 Ω cm 2. At 77 K, spectral measurements yielded high responsivity between 3 and 5 μm with the cutoff wavelength of 5.33 μm. The maximum responsivity tor 80-μm diameter detectors was 1.00 × 10 5 V/W at 435 μm while the detectivity was 3.41×10 9 cm Hz 1/2/W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 μm with the pump at 780 mm. 30-μm diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.Item Open Access Highly efficient wavelength conversion of Q-switched Nd: YAG lasers into a red wavelength(Institute of Electrical and Electronics Engineers, 2006) Figen, Z. G.; Yalabik, A.; Aytür, O.We report a nanosecond upconversion optical parametric oscillator which can convert the output of a Nd:YAG laser at 1064-nm wavelength into 627 nm with high efficiency. This device is based on a single KTiOAsO4 crystal that is simultaneously phase matched for optical parametric generation and sum-frequency generation. Pumped at a wavelength of 1064 nm by a Q-switched Nd:YAG laser in a double-pass configuration, this device produces 14.2-ns-long 5.8-mJ red pulses at a wavelength of 627 nm with 29% energy conversion efficiency. In addition, we developed a theoretical model for this device, whose predictions agree reasonably well with our experimental results. It is possible to scale this device for use with higher energy pump lasers and to shape it into a physically small semi-monolithic configuration.Item Open Access Idler-efficiency-enhanced long-wave infrared beam generation using aperiodic orientation-patterned GaAs gratings(Optical Society of America, 2016) Figen, Z. G.; Aytür, O.; Arıkan, OrhanIn this paper, we design aperiodic gratings based on orientation-patterned gallium arsenide (OP-GaAs) for converting 2.1 μm pump laser radiation into long-wave infrared (8-12 μm) in an idler-efficiency-enhanced scheme. These single OP-GaAs gratings placed in an optical parametric oscillator (OPO) or an optical parametric generator (OPG) can simultaneously phase match two optical parametric amplification (OPA) processes, OPA 1 and OPA 2. We use two design methods that allow simultaneous phase matching of two arbitrary χ 2 processes and also free adjustment of their relative strength. The first aperiodic grating design method (Method 1) relies on generating a grating structure that has domain walls located at the zeros of the summation of two cosine functions, each of which has a spatial frequency that equals one of the phase-mismatch terms of the two processes. Some of the domain walls are discarded considering the minimum domain length that is achievable in the production process. In this paper, we propose a second design method (Method 2) that relies on discretizing the crystal length with sample lengths that are much smaller than the minimum domain length and testing each sample's contribution in such a way that the sign of the nonlinearity maximizes the magnitude sum of the real and imaginary parts of the Fourier transform of the grating function at the relevant phase mismatches. Method 2 produces a similar performance as Method 1 in terms of the maximization of the height of either Fourier peak located at the relevant phase mismatch while allowing an adjustable relative height for the two peaks. To our knowledge, this is the first time that aperiodic OP-GaAs gratings have been proposed for efficient long-wave infrared beam generation based on simultaneous phase matching.Item Open Access ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum(IEEE, 2004) Bıyıklı, Necmi; Kimukin, I.; Butun, B.; Aytür, O.; Özbay, EkmelHigh-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, InAlGaAs-InP, and InGaAsP-InP) were utilized for detection in the ultraviolet (UV) (λ < 400 nm), near-IR (λ ∼ 850 nm), and IR (λ ∼ 1550 nm) spectrum. The material properties of thin ITO films were characterized. Using resonant-cavity-enhanced (RCE) detector structures, improved efficiency performance was achieved. Current-voltage, spectral responsivity, and high-speed measurements were carried out on the fabricated ITO-Schottky devices. The device performances obtained with different material systems are compared.Item Open Access Non-orthogonal domains in phase space of quantum optics and their relation to fractional Fourier transforms(Elsevier BV * North-Holland, 1995-10-15) Aytür, O.; Özaktaş, Haldun M.It is customary to define a phase space such that position and momentum are mutually orthogonal coordinates. Associated with these coordinates, or domains, are the position and momentum operators. Representations of the state vector in these coordinates are related by the Fourier transformation. We consider a continuum of "fractional" domains making arbitrary angles with the position and momentum domains. Representations in these domains are related by the fractional Fourier transformation. We derive transformation, commutation, and uncertainty relations between coordinate multiplication, differentiation, translation, and phase shift operators making arbitrary angles with each other. These results have a simple geometric interpretation in phase space and applications in quantum optics.Item Open Access Operational approach to quantum limits on polarization measurement(Elsevier, 1994) Hakioğlu, T.; Shumovsky, A. S.; Aytür, O.We discuss the polarization measurement of a fully polarized coherent field in the weak intensity quantum limit within the framework of operational approach which was recently discussed by Noh, Fougéres and Mandel. We mainly focus on the fluctuations in the measurement of the parameters of polarization and on the uncertainty relations between them. A dependence of these parameters and their quantum fluctuations on the parameters of the initial coherent field is found. © 1994.Item Open Access Phase-matched self-doubling optical parametric oscillator(Optical Society of America, 1997-03-01) Kartaloğlu, T.; Köprülü, K. G.; Aytür, O.We report a synchronously pumped intracavity frequency-doubled optical parametric oscillator that employs a single KTiOPO4 crystal for both parametric generation and frequency doubling. Both nonlinear processes are phase matched for the same direction of propagation in the crystal. The parametric oscillator, pumped by a femtosecond Ti:sapphire laser at a wavelength of 745 nm, generates a green output beam at 540 nm with a 29% power conversion efficiency. Angle tuning in conjunction with pump wavelength tuning provides output tunability in the 530-585-nm range.Item Open Access Plane-wave dynamics of optical parametric oscillation with simultaneous sum-frequency generation(Institute of Electrical and Electronics Engineers, 1999-06) Dikmelik, Y.; Akgün, G.; Aytür, O.This paper presents a theoretical analysis of sum-frequency generating optical parametric oscillators where a single nonlinear crystal is used for both parametric generation and sum-frequency generation. In these devices, the parametric and sum-frequency generation processes are both phase matched for the same direction of propagation inside the crystal. Different polarization geometries for which this simultaneous phase-matching condition can potentially be satisfied are identified and categorized, for both birefringent and quasi-phase-matching methods. Plane-wave coupled-mode equations are presented for each of these categories. Solutions of these coupled mode equations and calculation of the single-pass saturated signal gain are outlined. Intracavity signal photon flux density calculations based on these solutions lead to stable steady-state upconversion, multistability, and chaos. The dependence of the photon conversion efficiency on various design parameters are investigated.Item Open Access Plane-wave theory of self-doubling optical parametric oscillators(Institute of Electrical and Electronics Engineers, 1998-03) Aytür, O.; Dikmelik, Y.This paper presents a theoretical analysis of self-doubling optical parametric oscillators (OPO's) where a single nonlinear crystal is used for both parametric generation and frequency doubling. In these devices, the parametric generation and frequency-doubling processes are both phase matched for the same direction of propagation inside the crystal. Different polarization geometries for which this simultaneous phase-matching condition can potentially be satisfied are identified and categorized. Plane-wave coupled-mode equations are presented for each of these categories. Numerical solutions of these coupled-mode equations and calculation of the single-pass saturated signal gain are outlined. Intracavity signal photon flux calculations iased on these numerical solutions are presented. The dependence of performance measures such as the photon conversion efficiency on various design parameters are investigated.