High-Speed InSb photodetectors on GaAs for mid-IR applications

Date
2004
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
IEEE Journal on Selected Topics in Quantum Electronics
Print ISSN
1077-260X
Electronic ISSN
Publisher
IEEE
Volume
10
Issue
4
Pages
766 - 770
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Series
Abstract

We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 Ω cm 2. At 77 K, spectral measurements yielded high responsivity between 3 and 5 μm with the cutoff wavelength of 5.33 μm. The maximum responsivity tor 80-μm diameter detectors was 1.00 × 10 5 V/W at 435 μm while the detectivity was 3.41×10 9 cm Hz 1/2/W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 μm with the pump at 780 mm. 30-μm diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.

Course
Other identifiers
Book Title
Keywords
High-speed, Infrared, Photodetector, Arsenic, Bandwidth, Chemical vapor deposition, Electric resistance, Epitaxial growth, Fourier transforms, Infrared radiation, Optical properties, Semiconducting gallium arsenide, Voltage measurement, High-speed, Midinfrared (mid-IR), Wavelength, Photodetectors
Citation
Published Version (Please cite this version)