Browsing by Subject "Photoillumination"

Now showing 1 - 3 of 3

Open Access
Charging/discharging dynamics of CdS and CdSe films under photoillumination using dynamic x-ray photoelectron spectroscopy
(A I P Publishing LLC, 2010) Sezen, H.; Süzer, Şefik
Thin films of CdS and CdSe are deposited on HF-cleaned Si O2 /Si substrates containing ∼5 nm thermally grown silicon oxide. x-ray photoelectron spectroscopy (XPS) data of these films are collected in a dynamic mode, which is based on recording the spectrum under modulation with an electrical signal in the form of ±10 V square-wave pulses. Accordingly, all peaks are twined and shifted with respect to the grounded spectrum. The binding energy difference between the twinned peaks of a dielectric system has a strong dependence on the frequency of the electrical stimuli. Therefore, dynamic XPS provides a means to extract additional properties of dielectric materials, such as effective resistance and capacitance. In this work, the authors report a new advancement to the previous method, where they now probe a photodynamic process. For this reason, photoillumination is introduced as an additional form of stimulus and used to investigate the combined optical and electrical response of the photoconductive thin films of CdS and CdSe using dynamic XPS.
Open Access
Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage
(2011) Sezen, H.; Süzer, Şefik
Binding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought into contact with each other (p-n junction). We show that the barely measurable Si2p binding energy difference between moderately doped n- and p-Si samples can be enhanced by photoillumination, due to reduction in surface band-bending, which otherwise screens this difference. Similar effects are also measured for samples containing oxide layers, since the band-bending at the buried oxide-Si interfaces is manifest as photovoltage shifts, although XPS does not probe the interface directly. The corresponding shift for the oxide layer of the p-Si is almost twice that of without the oxide, whereas no measurable shifts are observable for the oxide of the n-Si. These results are all related to band-bending effects and are vital in design and performance of photovoltaics and other related systems.
Open Access
Dynamical XPS measurements for probing photoinduced voltage changes
(2010) Sezen, H.; Süzer, Şefik
Photoillumination with 405 nm laser causes shifts in XPS peaks of n-Si(100), and CdS. To distinguish between surface photovoltage (SPV), and charging, dynamical measurements are performed, while sample is subjected to square wave pulses of ± 10.00 V amplitude, and 10-3-10 5 Hz frequency. For n-Si, Si2p peaks are twinned at + 10.00 and -10.00, yielding always 20.00 eV difference. Photoillumination shifts the twinned peaks to higher energies, but the difference is always 20.00 eV. However, for CdS, the measured binding difference of Cd3d peaks exhibits strong frequency dependence due to charging, which indicates that both fast SPV and slow charging effects are operative.