Communication: Enhancement of dopant dependent x-ray photoelectron spectroscopy peak shifts of Si by surface photovoltage

Date
2011
Advisor
Instructor
Source Title
Journal of Chemical Physics
Print ISSN
0021-9606
Electronic ISSN
1089-7690
Publisher
Volume
135
Issue
14
Pages
1 - 5
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Binding energies measured by x-ray photoelectron spectroscopy (XPS) are influenced by doping, since electrons are transferred to (p-type) and from (n-type) samples when they are introduced into the spectrometer, or brought into contact with each other (p-n junction). We show that the barely measurable Si2p binding energy difference between moderately doped n- and p-Si samples can be enhanced by photoillumination, due to reduction in surface band-bending, which otherwise screens this difference. Similar effects are also measured for samples containing oxide layers, since the band-bending at the buried oxide-Si interfaces is manifest as photovoltage shifts, although XPS does not probe the interface directly. The corresponding shift for the oxide layer of the p-Si is almost twice that of without the oxide, whereas no measurable shifts are observable for the oxide of the n-Si. These results are all related to band-bending effects and are vital in design and performance of photovoltaics and other related systems.

Course
Other identifiers
Book Title
Keywords
Band-bending effects, Bandbending, Energy differences, Oxide layer, P-n junction, P-type, Peak shift, Photo-voltage, Photoillumination, Photovoltaics, Related systems, Surface photovoltages, Binding energy, Doping (additives), Photoelectron spectroscopy, Photons, Photovoltaic effects, Potential energy, Semiconductor junctions, Silicon, Spectrometers, X ray photoelectron spectroscopy
Citation
Published Version (Please cite this version)