Browsing by Subject "Optoelectronic devices"

Now showing 1 - 20 of 47

Open Access
2D material liquid crystals for optoelectronics and photonics
(Royal Society of Chemistry, 2017) Hogan, Ben T.; Kovalska, Evgeniya; Craciun, Monica F.; Baldycheva, Anna
The merging of the materials science paradigms of liquid crystals and 2D materials promises superb new opportunities for the advancement of the fields of optoelectronics and photonics. In this review, we summarise the development of 2D material liquid crystals by two different methods: dispersion of 2D materials in a liquid crystalline host and the liquid crystal phase arising from dispersions of 2D material flakes in organic solvents. The properties of liquid crystal phases that make them attractive for optoelectronics and photonics applications are discussed. The processing of 2D materials to allow for the development of 2D material liquid crystals is also considered. An emphasis is placed on the applications of such materials; from the development of films, fibers and membranes to display applications, optoelectronic devices and quality control of synthetic processes. © 2017 The Royal Society of Chemistry.
Open Access
Active Nanophotonics
(IEEE, 2020) Alu, A.; Demir, Hilmi Volkan; Jagadish, c
Being able to manipulate and control light flows at small scales holds the promise to open groundbreaking opportunities for a variety of technologies. Consider, for instance, the challenges currently faced in the world of computing: as data rates and processing demands increase worldwide at an exponential rate, we are facing unsustainable increases in energy consumption associated with data centers and streaming providers. To address these challenges, optical computing and communications offer an interesting alternative to electronic-based systems. Using light for these purposes, however, is hindered by the fact that photons are not easily squeezed to volumes beyond the diffraction limit, i.e., below the wavelength scale, which would be required both to enable lowenergy computation at sufficiently high speeds and to match the degree of integration density available in electronic systems. Today, the field of optoelectronics, which combines highdensity electronic devices to process the data and low-energy data transport enabled by light, is growing at a very fast pace.
Open Access
AlGaN quadruple-band photodetectors
(IEEE, 2009) Gökkavas, Mutlu; Bütün, Serkan; Caban, P.; Strupinski, W.; Özbay, Ekmel
Quadruple back-illuminated ultraviolet metal-semiconductor-metal photodetectors with four different spectral responsivity bands were demonstrated. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 9.98 nm.
Open Access
AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
(2008) Tut, Turgut; Gökkavas, Mutlu; Özbay, Ekmel
We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Open Access
Blue organic light-emitting diodes based on pyrazoline phenyl derivative
(Elsevier, 2012-01-21) Stakhira, P.; Khomyak, S.; Cherpak, V.; Volyniuk, D.; Simokaitiene, J.; Tomkeviciene, A.; Kukhta, N.A.; Grazulevicius, J.V.; Kukhta, A.V.; Sun, X.W.; Demir, Hilmi Volkan; Hotra, Z.; Voznyak, L.
The results of an experimental study of the electroluminescent device made of ITO/CuI/2,6-di-tert.-butyl-4-(2,5-diphenyl-3,4-dihydro-2H-pyrazol-3-yl)- phenol (HPhP)/3,6-Di(9-carbazolyl)-9-(2-ethylhexyl) carbazole (TCz1)/Ca:Al with efficacy up to 10.63 cd/A are presented. HPhP provides blue emission with a peak wavelength at 445 nm. The layer of TCz1 acts as an electron-transporting layer. In the framework of density functional theory (DFT) approach the geometry configuration and energy levels of HPhP are found being in a good agreement with spectral and cyclic voltammogram data.
Open Access
CDs have fingerprints too
(Springer, Berlin, Heidelberg, 2009) Hammouri G.; Dana, Aykutlu; Sunar, B.
We introduce a new technique for extracting unique fingerprints from identical CDs. The proposed technique takes advantage of manufacturing variability found in the length of the CD lands and pits. Although the variability measured is on the order of 20 nm, the technique does not require the use of microscopes or any advanced equipment. Instead, we show that the electrical signal produced by the photodetector inside the CD reader is sufficient to measure the desired variability. We investigate the new technique by analyzing data collected from 100 identical CDs and show how to extract a unique fingerprint for each CD. Furthermore, we introduce a technique for utilizing fuzzy extractors over the Lee metric without much change to the standard code offset construction. Finally, we identify specific parameters and a code construction to realize the proposed fuzzy extractor and convert the derived fingerprints into 128-bit cryptographic keys. © 2009 Springer.
Open Access
Colloidal nanoplatelet/conducting polymer hybrids: excitonic and material properties
(American Chemical Society, 2016) Guzelturk, B.; Menk, F.; Philipps, K.; Kelestemur Y.; Olutas M.; Zentel, R.; Demir, Hilmi Volkan
Here we present the first account of conductive polymer/colloidal nanoplatelet hybrids. For this, we developed DEH-PPV-based polymers with two different anchor groups (sulfide and amine) acting as surfactants for CdSe nanoplatelets, which are atomically flat semiconductor nanocrystals. Hybridization of the polymers with the nanoplatelets in the solution phase was observed to cause strong photoluminescence quenching in both materials. Through steady-state photoluminescence and excitation spectrum measurements, photoluminescence quenching was shown to result from dominant exciton dissociation through charge transfer at the polymer/nanoplatelet interfaces that possess a staggered (i.e., type II) band alignment. Importantly, we found out that sulfide-based anchors enable a stronger emission quenching than amine-based ones, suggesting that the sulfide anchors exhibit more efficient binding to the nanoplatelet surfaces. Also, shorter surfactants were found to be more effective for exciton dissociation as compared to the longer ones. In addition, we show that nanoplatelets are homogeneously distributed in the hybrid films owing to the functional polymers. These nanocomposites can be used as building blocks for hybrid optoelectronic devices, such as solar cells.
Open Access
Colloidal quantum dot light-emitting diodes employing phosphorescent small organic molecules as efficient exciton harvesters
(American Chemical Society, 2014) Mutlugun, E.; Guzelturk, B.; Abiyasa, A. P.; Gao, Y.; Sun X. W.; Demir, Hilmi Volkan
Nonradiative energy transfer (NRET) is an alternative excitation mechanism in colloidal quantum dot (QD) based electroluminescent devices (QLEDs). Here, we develop hybrid highly spectrally pure QLEDs that facilitate energy transfer pumping via NRET from a phosphorescent small organic molecule-codoped charge transport layer to the adjacent QDs. A partially codoped exciton funnelling electron transport layer is proposed and optimized for enhanced QLED performance while exhibiting very high color purity of 99%. These energy transfer pumped hybrid QLEDs demonstrate a 6-fold enhancement factor in the external quantum efficiency over the conventional QLED structure, in which energy transfer pumping is intrinsically weak.
Open Access
Compressive sensing imaging with a graphene modulator at THz frequency in transmission mode
(IEEE, 2016) Özkan, V. A.; Takan, T.; Kakenov, Nurbek; Kocabaş, Coşkun; Altan, H.
In this study we demonstrate compressive sensing imaging with a unique graphene based optoelectronic device which allows us to modulate the THz field through an array of columns or rows distributed throughout its face.
Open Access
Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
(IEEE, 2010) Sarı, Emre; Akyuz, Özgün; Choi, E. -G.; Lee I.-H.; Baek J.H.; Demir, Hilmi Volkan
Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.
Open Access
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
(IEEE, 2009-10) Bütün, Serkan; Gökkavas, Mutlu; Yu, HongBo; Strupinski, Vlodek; Özbay, Ekmel
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.
Open Access
Design of dynamically adjustable anamorphic fractional Fourier transformer
(Elsevier BV * North-Holland, 1997-03-01) Erden, M. F.; Özaktaş, Haldun M.; Sahin, A.; Mendlovic, D.
We form optical systems by using only free space portions and cylindrical lenses, and consider these systems as anamorphic fractional Fourier transformers. We dynamically adjust the transform order, scale factor and field curvature of both orthogonal dimensions of anamorphic fractional Fourier transformation by just changing the focal lengths of cylindrical lenses used in the proposed setups. Here, we also consider two approaches for implementing cylindrical lenses with dynamically adjustable focal lengths. There may also be some other methods to obtain cylindrical lenses having adjustable focal lengths which can successfully be used in these proposed setups.
Open Access
Electrically-reconfigurable integrated photonic switches
(IEEE, 2004) Fidaner, O.; Demir, Hilmi Volkan; Sabnis V.A.; Harris Jr. J.S.; Miller, D.A.B.; Zheng J.-F.
We report remotely electrically reconfigurable photonic switches that intimately integrate waveguide electroabsorption modulators with surface-normal photodiodes, avoiding conventional electronics. These switches exhibit full C-band wavelength conversion at 5 Gb/s and are remotely reconfigurable within tens of nanoseconds.
Open Access
Enhanced tunability of V-shaped plasmonic structures using ionic liquid gating and graphene
(Elsevier Ltd, 2016) Ozdemir, O.; Aygar, A. M.; Balci, O.; Kocabas, C.; Caglayan, H.; Özbay, Ekmel
Graphene is a strong candidate for active optoelectronic devices because of its electrostatically tunable optical response. Current substrate back-gating methods are unable to sustain high fields through graphene unless a high gate voltage is applied. In order to solve this problem, ionic liquid gating is used which allows substrate front side gating, thus eliminating the major loss factors such as a dielectric layer and a thick substrate layer. On the other hand, due to its two dimensional nature, graphene interacts weakly with light and this interaction limits its efficiency in optoelectronic devices. However, V-shaped plasmonic antennas can be used to enhance the incident electric field intensity and confine the electric field near graphene thus allowing further interaction with graphene. Combining V-shaped nanoantennas with the tunable response of graphene, the operation wavelength of the devices that utilize V-shaped antennas can be tuned in situ. In the present paper, we demonstrate a graphene-based device with ionic liquid gating and V- shaped plasmonic antennas to both enhance and more effectively tune the total optical response. We are able to tune the transmission response of the device for up to 389 nm by changing the gate voltage by 3.8 V in the mid-infrared regime.
Open Access
Exact calculation of blocking probabilities for bufferless optical burst switched links with partial wavelength conversion
(IEEE, 2004-10) Akar, Nail; Karasan, Ezhan
In this paper, we study the blocking probabilities in a wavelength division multiplexing-based asynchronous bufferless optical burst switch equipped with a bank of tuneable wavelength converters that is shared per output link. The size of this bank is generally chosen to be less than the number of wavelengths on the link because of the relatively high cost of wavelength converters using current technologies; this case is referred to as partial wavelength conversion in the literature. We present a probabilistic framework for exactly calculating the blocking probabilities. Burst durations are assumed to be exponentially distributed. Burst arrivals are first assumed to be Poisson and later generalized to the more general phase-type distribution. Unlike existing literature based on approximations and/or simulations, we formulate the problem as one of finding the steadystate solution of a continuous-time Markov chain with a block tridiagonal infinitesimal generator. We propose a numerically efficient and stable solution technique based on block tridiagonal LU factorizations. We show that blocking probabilities can exactly and efficiently be found even for very large systems and rare blocking probabilities. Based on the results of this solution technique, we also show how this analysis can be used for provisioning wavelength channels and converters. © 2004 IEEE.
Open Access
Experimental investigation of layer-by-layer metallic photonic crystals
(Institution of Electrical Engineers, 1998-12) Temelkuran, B.; Altug, H.; Özbay, Ekmel
The authors have investigated the transmission properties and defect characteristics of layer-by-layer metallic photonic crystals. They have demonstrated experimentally that the metallicity gap of these crystals extends to an upper band-edge frequency, and no lower edge was detected down to 2 GHz. The defect structures built around these crystals exhibited high transmission peak amplitudes (100%) and high Q factors (2250). The crystals with low filling ratios (around 1-2%) were tested and were still found to possess metallic photonic crystal properties. These crystals exhibited high reflection rates within the metallicity gap and reasonable defect mode characteristics. A power enhancement factor of 190 was measured for the electromagnetic (EM) wave within planar cavity structures, by placing a monopole antenna inside the defect volume. These measurements show that detectors embedded inside a metallic photonic crystal can be used as frequency selective resonant cavity enhanced (RCE) detectors with increased sensitivity and efficiency when compared to conventional detectors.
Open Access
Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution
(Springer Verlag, 2017-03) Kurşungöz, C.; U. Şimşek, E.; Tuzaklı, R.; Ortaç, B.
Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension.
Open Access
Graphene-based optical modulators
(World Scientific Publishing Co. Pte. Ltd., 2017) Balci S.; Kocabas, C.
In this chapter, we summarize the recent progress on graphene based optical modulators. Ability to control density of high mobility electrons on large area graphene surface enables realization of new type of electrooptical modulators in optoelectronics. Due to the low electronic density of states, accumulation of charges on graphene significantly shifts the Fermi energy up to 1 eV giving rise to profound optical effects in the infrared and visible spectra. On the other hand, graphene operates as a tunable Drude metal in long wavelengths such as THz and microwave. This unique broadband activity of graphene has stimulated a great deal of interest in graphene community due to its potential use in new optoelectronic devices. After discussing the electrically tunable optical properties of graphene, we highlight the key achievements in the field.
Open Access
Graphene-enabled optoelectronics on paper
(American Chemical Society, 2016-06) Polat, E. O.; Uzlu, H. B.; Balci, O.; Kakenov, N.; Kovalska, E.; Kocabas, C.
The realization of optoelectronic devices on paper has been an outstanding challenge due to the large surface roughness and incompatible nature of paper with optical materials. Here, we demonstrate a new class of optoelectronic devices on a piece of printing paper using graphene as an electrically reconfigurable optical medium. Our approach relies on electro-modulation of optical properties of multilayer graphene on paper via blocking the interband electronic transitions. The paper based devices yield high optical contrast in the visible spectrum with a fast response. Pattering graphene into multiple pixels, folding paper into three-dimensional shapes or printing colored ink on paper substrates enable us to demonstrate novel optoelectronic devices which cannot be realized with wafer-based techniques.
Open Access
Growth of ∼3-nm ZnO nano-islands using Atomic layer deposition
(IEEE, 2016) El-Atab, N.; Chowdhury, F. I.; Ulusoy, Türkan Gamze; Ghobadi, Amir; Nazirzadeh, Amin; Okyay, Ali Kemal; Nayfeh, A.
In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.