Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
Date
2009-10
Advisor
Instructor
Source Title
2009 IEEE LEOS Annual Meeting Conference Proceedings
Print ISSN
1092-8081
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
236 - 237
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.
Course
Other identifiers
Book Title
Keywords
GaN template, Metal semiconductor metal photodetector, Semi-insulating GaN, Wide-band-gap semiconductor, Gallium alloys, Gallium nitride, Heterojunctions, Optoelectronic devices, Semiconducting gallium, Semiconducting gallium compounds, Silicon carbide, Photodetectors