Browsing by Subject "Magnetic field effects"

Now showing 1 - 20 of 21

Open Access
50 nm Hall Sensors for Room Temperature Scanning Hall Probe Microscopy
(Institute of Physics Publishing, 2004) Sandhu, A.; Kurosawa, K.; Dede, M.; Oral, A.
Bismuth nano-Hall sensors with dimensions ∼50nm × 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 × 10-4 Ω/G, 9.1kΩ and 0.8G/√Hz, respectively. A 50nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.
Open Access
Analysis of electrical characteristics and magnetic field dependences of YBCO step edge and bicrystal grain boundary junctions for rf-SQUID applications
(Institute of Physics, 2004) Fardmanesh, M.; Schubert, J.; Akram, R.; Bick, M.; Banzet, M.; Zander, W.; Zhang, Y.; Krause, H-J.
The dc characteristics and magnetic field dependences of Y-Ba-Cu-O bicrystal grain boundary junctions (BGBJs) and step edge junctions (SEJs) were investigated for fabrication of rf-SQUIDs. Test junctions with up to 8 μm widths as well as the junctions of the two types of junction-based rf-SQUID were studied. The SEJs typically showed lower Jc and higher ρN as compared to the BGBJs, resulting in close IcRN products. All the BGBJs showed classical field dependent Ic following their junction width, resembling Fraunhofer patterns. The field sensitivity of the BGBJs' Uc led to low yield submicron BGBJ rf-SQUIDs partially impaired by the Earth's magnetic field. Two major behaviours of low and high field dependences of Ic were observed for the SEJs. Only the low field-sensitive SEJs resulted in micron size junction rf-SQUIDs not impaired by the Earth's magnetic field. The low field-sensitive SEJs led to low I/f noise magnetically stable rf-SQUIDs appropriate for applications in unshielded environments at 77 K.
Open Access
Compressibility of a two-dimensional electron gas in a parallel magnetic field
(Elsevier B.V., 2007) Subaşi, A. L.; Tanatar, Bilal
The thermodynamic compressibility of a two-dimensional electron system in the presence of an in-plane magnetic field is calculated. We use accurate correlation energy results from quantum Monte Carlo simulations to construct the ground state energy and obtain the critical magnetic field Bc required to fully spin polarize the system. Inverse compressibility as a function of density shows a kink-like behavior in the presence of an applied magnetic field, which can be identified as Bc. Our calculations suggest an alternative approach to transport measurements of determining full spin polarization.
Open Access
Direct magnetic imaging of ferromagnetic domain structures by room temperature scanning hall probe microscopy using a bismuth micro-Hall probe
(Japan Society of Applied Physics, 2001) Sandhu, A.; Masuda, H.; Oral, A.; Bending, S. J.
A bismuth micro-Hall probe sensor with an integrated scanning tunnelling microscope tip was incorporated into a room temperature scanning Hall probe microscope system and successfully used for the direct magnetic imaging of microscopic domains of low coercivity perpendicular garnet thin films and demagnetized strontium ferrite permanent magnets. At a driving current of 800 μA, the Hall coefficient, magnetic field sensitivity and spatial resolution of the Bi probe were 3.3 × 10-4 Ω/G, 0.38 G/√Hz and ∼ 2.8 μm, respectively. The room temperature magnetic field sensitivity of the Bi probe was comparable to that of a semiconducting 1.2μm GaAs/AlGaAs heterostructure micro-Hall probe, which exhibited a value of 0.41 G/√Hz at a maximum driving current of 2μA.
Open Access
Disorder and localization in the lowest Landau level in the presence of dilute point scatterers
(Pergamon Press, 1999) Gedik, Z.; Bayındır, Mehmet
We study the localization properties of a two-dimensional noninteracting electron gas in the presence of randomly distributed short-range scatterers in very high magnetic fields. We evaluate the participation number of the eigenstates obtained by exact diagonalization technique. At low impurity concentrations we obtain self-averaged values showing that all states, except those exactly at the Landau level, are localized with finite localization length. We conclude that in this dilute regime the localization length does not diverge. We also find that the maximum localization length increases exponentially with impurity concentration. Our calculations suggest that scaling behavior may be absent even for higher concentrations of scatterers.
Open Access
Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009) Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S.
The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures. © 2009 Elsevier B.V. All rights reserved.
Open Access
Fractional quantum Hall states in the vicinity of Mott plateaus
(The American Physical Society, 2010) UmucalIlar, R. O.; Mueller, E. J.
We perform variational Monte Carlo calculations to show that bosons in a rotating optical lattice will form analogs of fractional quantum Hall states when the tunneling is sufficiently weak compared to the interactions, and the deviation of density from an integer is commensurate with the effective magnetic field. We compare the energies of superfluid and correlated states to one another and to the energies found in full configuration-interaction calculations on small systems. We look at overlaps between our variational states and the exact ground state, characterizing the ways in which fractional quantum Hall effect correlations manifest themselves near the Mott insulating state. We explore the experimental signatures of these states.
Open Access
Generation of long-living entanglement between two separate three-level atoms
(The American Physical Society, 2005) Çakir, Ö.; Dung, H. T.; Knöll, L.; Welsch, Dirk- Gunnar
A scheme for nonconditional generation of long-living maximally entangled states between two spatially well separated atoms is proposed. In the scheme, A-type atoms pass a resonatorlike equipment of dispersing and absorbing macroscopic bodies giving rise to body-assisted electromagnetic field resonances of well-defined heights and widths. Strong atom-field coupling is combined with weak atom-field coupling to realize entanglement transfer from the dipole-allowed transitions to the dipole-forbidden transitions, whereby the entanglement is preserved when the atoms depart from the bodies and from each other. The theory is applied to the case of atoms passing by a microsphere.
Open Access
Junction characteristics and magnetic field dependencies of low noise step edge junction Rf-SQUIDs for unshielded applications
(IEEE, 2003-06) Fardmanesh, Mehdi; Schubert, J.; Akram, Rizwan; Bozbey, Ali; Bick, M.; Banzet, M.; Lomparski, D.; Zander, W.; Zhang, Y.; Krause, H-J.
Step edge grain boundary (GB) junctions and rf-SQUIDs have been made using pulsed laser deposited Y-Ba-Cu-O films on crystalline LaAlO3 substrates. The steps were developed using various ion-beam etching processes resulting in sharp and ramp type step structures. Sharp step based GB junctions showed behavior of serial junctions with resistively shunted junction (RSJ)-like I-V characteristics. The ramped type step structures resulted in relatively high critical current, Ic, junctions and noisy SQUIDs. The sharp steps resulted in low noise rf-SQUIDs with a noise level below 140 fT/Hz12/ down to few Hz at 77 K while measured with conventional tank circuits. The Ic of the junctions and hence the operating temperature range of the SQUIDs made using sharp steps was controlled by both the step height and the junction widths. The junction properties of the SQUIDs were also characterized showing RSJ-like characteristics and magnetic field sensitivities correlated to that of the SQUIDs. Two major low and high background magnetic field sensitivities have been observed for our step edge junctions and the SQUIDs made on sharp steps. High quality step edge junctions with low magnetic field sensitivities made on clean sharp steps resulted in low 1/f noise rf-SQUIDs proper for applications in unshielded environment.
Open Access
Magnetic and electric Aharonov-Bohm effects in nanostructures
(Elsevier BV, 1996) Kulik, I. O.
The paper reviews and extends the magnetic Aharonov-Bohm effect (persistent current, resistance oscillation) in normal-metal rings including spin-independent and spin-dependent hopping, Zeeman splitting, magnetic textures and wheels, ring rotation and weak coupling, as well as the electric Aharonov-Bohm effect ("persistent charge") in small metallic contacts. We then discuss dynamical screening effects in a surface charge in a metal. Energy dissipation due to motion of the surface charge has a singularity at the velocity of motion equal to the phonon propagation velocity. Surface image of an external charge inside the metal is strongly distorted at the velocity of motion larger than the Fermi velocity.
Open Access
Magnetic field effects on an electron near an impenetrable dielectric surface
(1996) Saqqa, B.; Senger, R. T.; Erçelebi, A.
The interaction of an extrinsic electron with the surface optical modes of a semi-infinite medium is retrieved under the effect of a weak magnetic field. It is observed that for an electron in a bound state near the surface, the magnetic field enhances the effective phonon coupling rather prominently and thus leads to an increased degree of localisation of the electron towards the surface. This feature is seen to be more marked for larger coupling strengths. © Tübi̇tak.
Open Access
Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
(Institute of Physics Publishing Ltd., 1994) Tanatar, Bilal; Constantinou, N. C.
We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
Open Access
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
(IOP Publishing, 2010-03-16) Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, Ekmel
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm2 (V s)-1 with corresponding sheet carrier densities of 2.3-1.3 × 1013 cm-2. On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In 0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm2 (V s)-1 with corresponding sheet carrier densities of 1.3 and 1.1 × 1013 cm-2, respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.
Open Access
Non-Markovian decoherence: A critique of the two-level approximation
(Elsevier B.V., 2006) Hakioǧlu T.; Savran, K.; Sevinçli, H.; Meşe, E.
The environmental decoherence in multilevelled systems in the context of two-level approximation is examined. It is found that the environmental temperature plays a minor role in the magnitudes of the decoherence rates whereas, the system-environment coupling and the environmental energy spectrum are dominant. Particularly, the latter is important in zero temperature quantum fluctuations and/or the nonequilibrium noise sources due to the large range of energies present in the environmental modes. Decoherence is found to be dominated by the short time nonresonant processes and this observation severely questions the use of the two-levelled models on decoherence.
Open Access
Numerical analysis for remote identification of materials with magnetic characteristics
(2011) Ege, Y.; Şensoy, M.G.; Kalender O.; Nazlibilek, S.
There is a variety of methods used for remote sensing of objects such as acoustic, ground penetration radar detection, electromagnetic induction spectroscopy, infrared imaging, thermal neutron activation, core four-pole resonance, neutron backscattering, X-ray backscattering, and magnetic anomaly. The method that has to be used can be determined by the type of material, geographical location (underground or water), etc. Recent studies have been concentrated on the improvement of the criteria such as sensing distances, accuracy, and power consumption. In this paper, anomalies created by materials with magnetic characteristics at the perpendicular component of the Earth magnetic field have been detected by using a KMZ51 anisotropic magnetoresistive sensor with high sensitivity and low power consumption, and also, the effects of physical properties of materials on magnetic anomaly have been investigated. By analyzing the graphics obtained by 2-D motion of the sensor over the material, the most appropriate mathematical curves and formulas have been determined. Based on the physical properties of the magnetic material, the variations of the variables constituting the formulas of the curves have been analyzed. The contribution of this paper is the use of the results of these analyses for the purpose of identification of an unknown magnetic material. This is a new approach for the detection and determination of materials with magnetic characteristics by sensing the variation at the perpendicular component of the Earth magnetic field. The identification process has been explained in detail in this paper. © 2011 IEEE.
Open Access
Phase boundary of the boson Mott insulator in a rotating optical lattice
(The American Physical Society, 2007) Umucalilar, R. O.; Oktel, M. Ö.
We consider the Bose-Hubbard model in a two-dimensional rotating optical lattice and investigate the consequences of the effective magnetic field created by rotation. Using a Gutzwiller-type variational wave function, we find an analytical expression for the Mott insulator (MI)-superfluid (SF) transition boundary in terms of the maximum eigenvalue of the Hofstadter butterfly. The dependence of phase boundary on the effective magnetic field is complex, reflecting the self-similar properties of the single particle energy spectrum. Finally, we argue that fractional quantum Hall phases exist close to the MI-SF transition boundaries, including MI states with particle densities greater than one.
Open Access
Plasmons and the drag effect in a strong magnetic field
(Elsevier B.V., 2002) Manolescu, A.; Tanatar, Bilal
We study the effect of magnetoplasmons on the drag resistance in a strong magnetic field, at finite temperatures. The typical magnetic field is about 1 T, and the temperature is up to 10 K. The Landau levels are broadened by disorder, but well separated in energy. We discuss intra-Landau level magnetoplasmons, with low frequencies, below ωc, and inter-Landau level magnetoplasmons (also called Bernstein modes), with high frequencies, close to multiples of ωc. We compare the temperature dependence of the minima and maxima of the Shubnikov-de Haas oscillations of the transresistance.
Open Access
Room temperature sub-micron magnetic imaging by scanning hall probe microscopy
(Japan Society of Applied Physics, 2001) Sandhu, A.; Masuda, H.; Oral, A.; Bending, S. J.
An ultra-high sensitive room temperature scanning Hall probe microscope (RT-SHPM) system incorporating a GaAs/A1GaAs micro-Hall probe was used for the direct magnetic imaging of localized magnetic field fluctuations in very close proximity to the surface of ferromagnetic materials. The active area, Hall coefficient and field sensitivity of the Hall probe were 0.8 μm×0.8 μm, 0.3 Ω/G and 0.04 G/√Hz, respectively. The use of a semiconducting Hall probe sensor enabled measurements in the presence of externally applied magnetic fields. Samples studied included magnetic recording media, demagnetized strontium ferrite permanent magnets, and low coercivity perpendicular garnet thin films. The RT-SHPM offers a simple means for quantitatively monitoring sub-micron magnetic domain structures at room temperature.
Open Access
The self-consistent calculation of the edge states at quantum Hall effect (QHE) based Mach-Zehnder interferometers (MZI)
(Elsevier B.V., 2008) Siddiki, A.; Kavruk, A. E.; Öztürk, T.; Atav, U.; Şahin, M.; Hakioǧlu T.
The spatial distribution of the incompressible edge states (IES) is obtained for a geometry which is topologically equivalent to an electronic Mach-Zehnder interferometer, taking into account the electron-electron interactions within a Hartree type self-consistent model. The magnetic field dependence of these IES is investigated and it is found that an interference pattern may be observed if two IES merge or come very close, near the quantum point contacts. Our calculations demonstrate that, being in a quantized Hall plateau does not guarantee observing the interference behavior.
Open Access
Temperature and magnetic field dependence of superconductivity in nanoscopic metallic grains
(Elsevier Science, 2001) Bozat Ö.; Gedik, Z.
We study pairing correlations in ultrasmall superconductor in the nanoscopic limit by means of a toy model where electrons are confined in a single, multiply degenerate energy level. We solve the model exactly to investigate the temperature and magnetic field dependence of number parity effect (dependence of ground state energy on evenness or oddness of the number of electrons). We find a different parity effect parameter to critical temperature ratio (≃4 rather than 3.5) which turns out to be consistent with exact solution of the BCS gap equation for our model. This suggests the equivalence between the parity effect parameter and the superconducting gap. We also find that magnetic field is suppressed as temperature increases. © 2001 Elsevier Science Ltd. All rights reserved.