Browsing by Subject "Interfaces (materials)"

Now showing 1 - 12 of 12

Open Access
Analytic modeling of patterned high-Tc superconductive bolometers: film and substrate interface effects
(SPIE, 1998) Fardmanesh, Mehdi; Rothwarf, A.
Superconducting film and substrate interface effects on the response of superconductive edge-transition bolometers are modeled with a one dimensional thermal model in closed form, for samples with large area patterns compared to the substrate thickness. The results from the model agree with experimental results on samples made of meander line patterned granular YBCO films on crystalline substrates, in both the magnitude and phase of the response versus modulation frequency up to about 100 KHz, the limit of the characterization setup. Using the fit of the calculated frequency response curves obtained from the model to the measured ones, values of the film-substrate and substrate-holder thermal boundary resistance, heat capacity of the superconducting film, and the thermal parameters of the substrate materials could be investigated. While the calculated magnitude and phase of the response of the SrTiO3 substrate samples obtained from the model is in a very good agreement with the measured values, the calculated response of the LaAlO3 and MgO substrate samples deviate slightly from the measured values at very low frequencies, increasing with an increase in the thermal conductivity of the substrate material. Using the fit of the calculated response to the measured values, film-substrate thermal boundary resistances in the range of 4.4* 10-3 to 4.4* 10-2 K-cm2-w-1 are obtained for different substrate materials. The effect of substrate optical absorption in the response of the samples is also investigated.
Open Access
Analytic thermal modeling for dc-to-midrange modulation frequency responses of thin-film high-Tc superconductive edge-transition bolometers
(Optical Society of America, 2001) Fardmanesh, M.
Thin-film superconductive edge-transition bolometers are modeled with a one-dimensional analytic thermal model with joule heating, film and substrate materials, and the physical interface effects taken into consideration. The results from the model agree well with the experimental results of samples made of large-meander-line Yba2Cu3O7-x films on crystalline SrTiO3, LaAlO3, and MgO substrates up to 100 kHz, the limits of the experimental setup. Compared with the results of the SrTiO3 substrate samples, the results from the model of the LaAlO3 and the MgO substrate samples deviate slightly from the measured values at very low modulation frequencies (below ∼10 Hz). The deviation increases for higher thermal-conductive substrate materials. When the model was used, the substrate absorption and the thermal parameters of the devices could also be investigated. © 2001 Optical Society of America.
Open Access
Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
(Elsevier, 2013) Arslan, E.; Turan, S.; Gökden, S.; Teke, A.; Özbay, Ekmel
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.
Open Access
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014) Altuntas, H.; Donmez, I.; Ozgit Akgun, C.; Bıyıklı, Necmi
In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed under N2 ambient at 600, 700, and 800 C to obtain β-phase. The structure and microstructure of the β-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of β-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/β-Ga2O3/p-Si metal-oxide- semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the β-Ga2O3 thin films were annealed at 800 C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (RS), ideality factor (n), zero-bias barrier height (Bo), and interface states (NSS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (ESS-EV) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (e), and RS into account. Also using the Norde function and C-V technique, e values were calculated and cross-checked. Results show that β-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and β-Ga2O3 oxide layer.
Open Access
Electron beam lithography designed silver nano-disks used as label free nano-biosensors based on localized surface plasmon resonance
(Optical Society of America, 2012-01-20) Cinel, N. A.; Butun, S.; Özbay, Ekmel
We present a label-free, optical nano-biosensor based on the Localized Surface Plasmon Resonance (LSPR) that is observed at the metaldielectric interface of silver nano-disk arrays located periodically on a sapphire substrate by Electron-Beam Lithography (EBL). The nano-disk array was designed by finite-difference and time-domain (FDTD) algorithm-based simulations. Refractive index sensitivity was calculated experimentally as 221-354 nm/RIU for different sized arrays. The sensing mechanism was first tested with a biotin-avidin pair, and then a preliminary trial for sensing heat-killed Escherichia coli (E. coli) O157:H7 bacteria was done. Although the study is at an early stage, the results indicate that such a plasmonic structure can be applied to bio-sensing applications and then extended to the detection of specific bacteria species as a fast and low cost alternative. © 2012 Optical Society of America.
Open Access
Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films
(Elsevier B.V., 2007) Foss, S.; Finstad, T. G.; Dana, A.; Aydınlı, Atilla
Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO2 layer closest to the interface through a pure SiO2 layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure.
Open Access
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
(IOP Publishing, 2010-03-16) Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, Ekmel
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected that InGaN will lead to relatively higher electron mobilities than GaN, Hall mobilities were measured to be much lower for samples with InGaN channels as compared to GaN. To investigate these observations the major scattering processes including acoustic and optical phonons, ionized impurity, interface roughness, dislocation and alloy disorder were applied to the temperature-dependent mobility data. It was found that scattering due mainly to interface roughness limits the electron mobility at low and intermediate temperatures for samples having InGaN channels. The room temperature electron mobilities which were determined by a combination of both optical phonon and interface roughness scattering were measured between 630 and 910 cm2 (V s)-1 with corresponding sheet carrier densities of 2.3-1.3 × 1013 cm-2. On the other hand, electron mobilities were mainly limited by intrinsic scattering processes such as acoustic and optical phonons over the whole temperature range for Al0.82In 0.18N/AlN/GaN and Al0.3Ga0.7N/AlN/GaN heterostructures where the room temperature electron mobilities were found to be 1630 and 1573 cm2 (V s)-1 with corresponding sheet carrier densities of 1.3 and 1.1 × 1013 cm-2, respectively. By these analyses, it could be concluded that the interfaces of HEMT structures with the InGaN channel layer are not as good as that of a conventional GaN channel where either AlGaN or AlInN barriers are used. It could also be pointed out that as the In content in the AlInN barrier layer increases the interface becomes smoother resulted in higher electron mobility.
Open Access
Perfectly absorbing ultra thin interference coatings for hydrogen sensing
(OSA - The Optical Society, 2016) Serhatlioglu, M.; Ayas S.; Bıyıklı, Necmi; Dana, A.; Solmaz, M. E.
Here we numerically demonstrate a straightforward method for optical detection of hydrogen gas by means of absorption reduction and colorimetric indication. A perfectly absorbing metal-insulator-metal (MIM) thin film interference structure is constructed using a silver metal back reflector, silicon dioxide insulator, and palladium as the upper metal layer and hydrogen catalyst. The thickness of silicon dioxide allows the maximizing of the electric field intensity at the Air/SiO2 interface at the quarter wavelengths and enabling perfect absorption with the help of highly absorptive palladium thin film (∼7 nm). While the exposure of the MIM structure to H2 moderately increases reflection, the relative intensity contrast due to formation of metal hydride is extensive. By modifying the insulator film thickness and hence the spectral absorption, the color is tuned and eye-visible results are obtained.
Open Access
Protein-releasing conductive anodized alumina membranes for nerve-interface materials
(Elsevier Ltd, 2016) Altuntas, S.; Buyukserin, F.; Haider, A.; Altinok, B.; Bıyıklı, Necmi; Aslim, B.
Nanoporous anodized alumina membranes (AAMs) have numerous biomedical applications spanning from biosensors to controlled drug delivery and implant coatings. Although the use of AAM as an alternative bone implant surface has been successful, its potential as a neural implant coating remains unclear. Here, we introduce conductive and nerve growth factor-releasing AAM substrates that not only provide the native nanoporous morphology for cell adhesion, but also induce neural differentiation. We recently reported the fabrication of such conductive membranes by coating AAMs with a thin C layer. In this study, we investigated the influence of electrical stimulus, surface topography, and chemistry on cell adhesion, neurite extension, and density by using PC 12 pheochromocytoma cells in a custom-made glass microwell setup. The conductive AAMs showed enhanced neurite extension and generation with the electrical stimulus, but cell adhesion on these substrates was poorer compared to the naked AAMs. The latter nanoporous material presents chemical and topographical features for superior neuronal cell adhesion, but, more importantly, when loaded with nerve growth factor, it can provide neurite extension similar to an electrically stimulated CAAM counterpart.
Open Access
Singlet and Triplet Exciton Harvesting in the Thin Films of Colloidal Quantum Dots Interfacing Phosphorescent Small Organic Molecules
(American Chemical Society, 2014) Guzelturk, B.; Hernandez Martinez P.L.; Zhao, D.; Sun X.W.; Demir, Hilmi Volkan
Efficient nonradiative energy transfer is reported in an inorganic/organic thin film that consists of a CdSe/ZnS core/shell colloidal quantum dot (QD) layer interfaced with a phosphorescent small organic molecule (FIrpic) codoped fluorescent host (TCTA) layer. The nonradiative energy transfer in these thin films is revealed to have a cascaded energy transfer nature: first from the fluorescent host TCTA to phosphorescent FIrpic and then to QDs. The nonradiative energy transfer in these films enables very efficient singlet and triplet state harvesting by the QDs with a concomitant fluorescence enhancement factor up to 2.5-fold, while overall nonradiative energy transfer efficiency is as high as 95%. The experimental results are successfully supported by the theoretical energy transfer model developed here, which considers exciton diffusion assisted Förster-type near-field dipole-dipole coupling within the hybrid films. © 2014 American Chemical Society.
Open Access
Subsurface-scattering calculations via the 3D FDTD method employing PML ABC for layered media
(IEEE, 1997) Oğuz, Uğur; Gürel, Levent
A three-dimensional finite-difference time-domain method that employs pure scattered-field formulation and perfectly matched layers (PML) as the absorbing boundary condition is developed for solving subsurface-scattering. A subsurface radar is modeled and the fields scattered from various buried objects with different parameters such as the size, depth, and number are observed and distinguished. The `derivative' signal, which can easily be obtained in practical systems, is useful in identifying the buried objects.
Open Access
XPS studies of SiO2/Si system under external bias
(American Chemical Society, 2003) Ulgut, B.; Süzer, Şefik
Thermally grown SiO2 layers on Si (100) substrate have been subjected to different external voltage bias during XPS analysis to induce changes in the measured binding energy difference between Si4+ and Si0 in Si2p and SiKLL regions. The Si2pp binding energy difference increases from 3.2 to 4.8 for samples containing 1-7 nm oxide thickness, and furthermore, this difference can be influenced by application of an external bias to the sample. Application of negative d.c. bias increases the binding energy difference, whereas positive bias decreases it. The voltage dependence of the binding energy difference exhibits a sigmoid character with an abrupt change near 0 V. Both the binding energy difference and differential change between the positive and negative bias have similar functional dependence on the thickness. This is attributed to differential charging between the silicon oxide layer and silicon substrate, which is decreased when a positive bias is applied to the sample (and therefore attracting a larger proportion of the stray electrons from the vacuum chamber to partially neutralize the oxide). Similarly, when negative bias is applied, the stray electrons are repelled from the sample resulting in less neutralization and an increased differential charging. Through external biasing, it is determined that charging in the SiO2/Si system persists all of the way down to 1 nm. Application of a.c. (square-wave) bias is equivalent to simultaneous application of negative and positive bias together. However, the differential change in the binding energy difference in the positive and negative cycle is frequency dependent and approaches to the d.c. results at lower frequencies.