Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

Date
2013
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Source Title
Thin Solid Films
Print ISSN
0040-6090
Electronic ISSN
Publisher
Elsevier
Volume
548
Issue
Pages
411 - 418
Language
English
Type
Article
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Abstract

Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.

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Keywords
AlInN/AlN/GaN single channel heterostructures, AlInN/AlN/GaN/AlN/GaN double channel heterostructures, Schottky contact, Tunneling current, Analytical expressions, Current-voltage data, Double channel, Forward bias voltage, Schottky contacts, Single channels, Temperature dependence, Tunneling current, Electron gas, Electron tunneling, Interfaces (materials), Schottky barrier diodes, Heterojunctions
Citation
Published Version (Please cite this version)