Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films

Date
2007
Advisor
Instructor
Source Title
Thin Solid Films
Print ISSN
0040-6090
Electronic ISSN
Publisher
Elsevier B.V.
Volume
515
Issue
16
Pages
6381 - 6384
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. Transmission electron microscopy investigations show precipitation of particles in the layers of highest Ge concentration. Furthermore there is evidence of diffusion between the layers. This paper focuses mainly on observed growth of Ge particles close to the interface, caused by Ge diffusion from the Ge:SiO2 layer closest to the interface through a pure SiO2 layer and to the interface. The particles grow as spheres in a direction away from the interface. Particles observed after 15 min anneal time are 4 nm in size and are amorphous, while after 45 min anneal time they are 7 nm in size and have a crystalline diamond type Ge structure.

Course
Other identifiers
Book Title
Keywords
Diffusion, Ge, Interfaces, Nanoparticle, Diffusion, Germanium, Interfaces (materials), Plasma enhanced chemical vapor deposition, Silica, Thin films, Transmission electron microscopy, Crystalline diamonds, Ge concentration, Multilayer germanosilicate, Nanoparticles
Citation
Published Version (Please cite this version)