Browsing by Subject "Electron scattering"

Now showing 1 - 11 of 11

Open Access
Disorder and localization in the lowest Landau level in the presence of dilute point scatterers
(Pergamon Press, 1999) Gedik, Z.; Bayındır, Mehmet
We study the localization properties of a two-dimensional noninteracting electron gas in the presence of randomly distributed short-range scatterers in very high magnetic fields. We evaluate the participation number of the eigenstates obtained by exact diagonalization technique. At low impurity concentrations we obtain self-averaged values showing that all states, except those exactly at the Landau level, are localized with finite localization length. We conclude that in this dilute regime the localization length does not diverge. We also find that the maximum localization length increases exponentially with impurity concentration. Our calculations suggest that scaling behavior may be absent even for higher concentrations of scatterers.
Open Access
Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires
(Elsevier, 1996) Bennett, C. R.; Tanatar, Bilal; Constantinou, N. C.
We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. Interactions of the scattered electron with neutral plasma components and phonons are treated on an equal footing within the random-phase approximation. Coupled mode effects substantially change the transport properties of the system at low temperatures. Particularly, the "plasmon-like" and "LO-phonon-like" excitations yield comparable rates which, as a consequence of the singular nature of the ID density of states, can be large at the threshold. This is in contrast to room temperature results where only the LO-phonon mode contributes significantly to the rate. The density and temperature dependence of the power loss reveals that dynamical screening effects are important, and energy-momentum conservation cannot be satisfied above a certain density for a given initial energy.
Open Access
Exchange-correlation effects in the impurity-limited mobility of GaAs quantum wires
(Sci Tech Res Counc Turkey, Ankara, Turkey, 1999) Tanatar, Bilal
We study the many-body effects described by the local-field corrections on the mobility of quasi-one dimensional electron systems. The low temperature mobility due to remote-impurity doping and interface-roughness scattering is calculated within the relaxation time approximation. We find that correlation effects significantly reduce the mobility at low density.
Open Access
High-energy electron relaxation and full-band electron dynamics in aluminium nitride
(Elsevier, 2002) Bulutay, Ceyhun; Ridley, B. K.; Zakhleniuk, N. A.
Material properties of AlN, particularly its wide band gap around 6 eV, warrant its operation in the high-field transport regimes reaching MV/cm fields. In this theoretical work, we examine the full-band scattering of conduction band electrons in AlN due to polar optical phonon (POP) emission, which is the main scattering channel at high fields. First, we obtain the band structure for the wurtzite phase of AlN using the empirical pseudopotential method. Scattering rates along the full length of several high-symmetry directions are computed efficiently through the Lehmann-Taut Brillouin zone integration technique. In order to shed light on the behaviour of the velocity-field characteristics at extremely high electric fields, in the order of a few MV/cm, we resort to an Esaki-Tsu estimation. Comparison of these results for AlN is made with our similar work on GaN. With typically more than 50% higher POP scattering rate compared to GaN, AlN has poorer high-field prospects. Availability of these data for AlN and GaN paves the way for practical assessment of the high-energy electron dynamics for the ternary alloy, AlGaN.
Open Access
Hot electron effects in unipolar n-type submicron structures based on GaN, AlN and their ternary alloys
(The Institution of Engineering and Technology, 2003) Sevik, C.; Bulutay, C.
The authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts per centimetre (MV/cm). The proposed high field transport methodology is based on the ensemble Monte Carlo technique, with all major scattering mechanisms incorporated. As a test-bed for understanding II and hot electron effects, an n+-n-n+ channel device is employed having a 0.1 μm thick n-region. The time evolution of the electron density along the device is seen to display oscillations in the unintentionally doped n-region, until steady state is established. The fermionic degeneracy effects are observed to be operational especially at high fields within the anode n+-region. For AlxGa1-xN-based systems, it can be noted that due to alloy scattering, carriers cannot acquire the velocities attained by the GaN and AlN counterparts. Finally, at very high fields II is shown to introduce a substantial energy loss mechanism for the energetic carriers that have just traversed the unintentionally doped n-region.
Open Access
Magnetic-field dependence of low-temperature mobility in quasi-one-dimensional electron systems
(Institute of Physics Publishing Ltd., 1994) Tanatar, Bilal; Constantinou, N. C.
We study the mobility of a quasi-one-dimensional (Q1D) electron system in the presence of an axial magnetic field at low temperatures. We consider the mobility limits for remote-impurity scattering, homogeneous-background scattering, interface-roughness scattering, and alloy-disorder scattering mechanisms. For a system in which all carriers are in the lowest subband, the electron-impurity interaction is modelled for the above cases, and analytic expressions are derived. Calculations appropriate for a GaAs Q1D structure are presented for typical wire radius R, electron density N, impurity density Ni, and applied magnetic field B.
Open Access
Non-linear thermoelectricity and cooling effects in metallic constrictions
(Institute of Physics Publishing Ltd., 1994) Kulik, I. O.
Linear as well as non-linear contributions to the Zeebeck and Peltier coefficients of a metallic film in contact with the equilibrium metal are calculated within a simple model. The non-linear part of the thermoelectric response survives down to a very low temperature which in principle permits thermoelectric cooling at these conditions. Thermal equilibrium in a metallic constriction between dissimilar metals is evaluated in the non-linear current-carrying regime.
Open Access
Persistent currents in mesoscopic loops and networks
(TÜBİTAK, 2003) Kulik, Igor O.
The paper describes persistent (also termed "permanent", or "non-decaying") currents in mesoscopic metallic and macromolecular rings, cylinders and networks. The current arises as a response of system to Aharonov-Bohm flux threading the conducting loop and does not require external voltage to support the current. Magnitude of the current is periodic function of magnetic flux with a period of normal-metal flux quantum Φ 0 = hc/e. Spontaneous persistent currents arise in regular macromolecular structure without the Aharonov-Bohm flux provided the azimuthal periodicity of the ring is insured by strong coupling to periodic background (a "substrate"), otherwise the system will undergo the Peierls transition arrested at certain flux value smaller than Φ 0. Extremely small (nanoscopic, macromolecular) loop with three localization sites at flux Φ = Φ 0/2 develops a Λ-shaped energy configuration suitable to serve as a qubit, as well as at the same as a "qugate" (quantum logic gate) supporting full set of quantum transitions required for universal quantum computation. The difference of the Aharonov-Bohm qubit from another suggested condensed-matter quantum computational tools is in the radiation free couplings in a qubit supporting the scalable, long-lived quantum computation.
Open Access
The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects
(Royal Society of Chemistry, 2015) Cosentino, S.; Mio, A. M.; Barbagiovanni, E. G.; Raciti, R.; Bahariqushchi, R.; Miritello, M.; Nicotra, G.; Aydınlı, Atilla; Spinella, C.; Terrasi, A.; Mirabella, S.
Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects. © The Royal Society of Chemistry.
Open Access
Simulation of millimeter-wave gunn oscillations in gallium nitride
(2004) Sevik, C.; Bulutay, C.
High field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeterwave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. The main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted. Finally, the physical origin of these Gunn oscillations is sought exploring whether it is the intervalley scattering mechanism, the Γ valley nonparabolicity, or the effective mass discrepancy between the Γ and the lowest satellite valleys as the responsible mechanism.
Open Access
Theoretical assessment of electronic transport in InN
(Elsevier, 2004) Bulutay, C.; Ridley, B. K.
Among the group-III nitrides, InN displays markedly unusual electronic transport characteristics due to its smaller effective mass, high peak velocity and high background electron concentration. First, a non-local empirical pseudopotential band structure of InN is obtained in the light of recent experimental and first-principles results. This is utilized within an ensemble Monte Carlo framework to illuminate the interesting transport properties. It is observed that InN has a peak velocity which is about 75% higher than that of GaN while at higher fields its saturation velocity is lower than that of GaN. Because of the strongly degenerate regime brought about by the high background electron concentration, the electron-electron interaction is also investigated, but its effect on the steady-state and transient velocity-field characteristics is shown to be negligible. Finally, hot phonon generation due to excessive polar optical phonon production in the electron scattering and relaxation processes is accounted for. The main findings are the appreciable reduction in the saturation drift velocity and the slower recovery from the velocity overshoot regime. The time evolution of the hot phonon distribution is analysed in detail and it is observed to be extremely anisotropic, predominantly along the electric force direction.