Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires

Date
1996
Advisor
Instructor
Source Title
Solid State Communications
Print ISSN
0038-1098
Electronic ISSN
Publisher
Elsevier
Volume
99
Issue
7
Pages
509 - 512
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. Interactions of the scattered electron with neutral plasma components and phonons are treated on an equal footing within the random-phase approximation. Coupled mode effects substantially change the transport properties of the system at low temperatures. Particularly, the "plasmon-like" and "LO-phonon-like" excitations yield comparable rates which, as a consequence of the singular nature of the ID density of states, can be large at the threshold. This is in contrast to room temperature results where only the LO-phonon mode contributes significantly to the rate. The density and temperature dependence of the power loss reveals that dynamical screening effects are important, and energy-momentum conservation cannot be satisfied above a certain density for a given initial energy.

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Keywords
Approximation theory, Electron energy levels, Electron scattering, Electron transport properties, Electronic density of states, Energy conservation, Hot carriers, Phonons, Random processes, Relaxation processes, Semiconductor device structures, Dynamical screening effects, Electron hole plasma, Energy momentum conservation, Hot electron momentum relaxation, Hot electron scattering, Neutral plasma components, Photoexcited quasi one dimensional structure, Plasmon phonon coupling, Power loss, Random phase approximation, Semiconductor quantum wires
Citation
Published Version (Please cite this version)