Browsing by Author "Tan, S. T."

Now showing 1 - 12 of 12

Open Access
Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes
(Elsevier B. V., 2018-04) Zhu, B.; Zhang, Z.; Tan, S. T.; Lu, S.; Zhang, Y.; Kang, X.; Wang, N.; Hasanov, N.; Demir, Hilmi Volkan
In this work, we report how the Mg doping in the barriers affects the electrical performance of InGaN/GaN-based light-emitting diodes. When compared with the reference device that does not have Mg doped quantum barriers, the turn-on voltage for the proposed device is reduced and the electrical thermal stability is improved. The superior electrical performance is analyzed through the temperature dependent current-voltage and capacitance-voltage characteristics. Meanwhile a reduced depletion length and increased acceptor concentration are achieved in the control devices which is consistent with the simulated results.
Open Access
High-performance triangular miniaturized-LEDs for high current and power density applications
(American Chemical Society, 2021-08-18) Lu, S.; Zhang, Y.; Zhang, Zi-H.; Zhu, B.; Zheng, H.; Tan, S. T.; Demir, Hilmi Volkan
This work proposes an effective electrode length model and reveals for the first time the relationship between this model and the mesa shape effect. On the basis of this model, we demonstrate high-performance triangular miniaturized-LEDs (mini-LEDs) and benchmark to the conventional square, and circular shapes of the same mesa area. Here, we systematically study the impact of shaping in mini-LEDs both theoretically and experimentally, which is fundamentally different than that of the conventional regular-sized LEDs. We find that, at the current level of 200 mA, the triangular mini-LEDs deliver an enhancement of 36.4% in the optical output power and a decrease of 9.6% for the forward voltage compared to the commonly used square ones, and also an enhancement of 24.6% in the optical output power and a decrease of 14.3% for the forward voltage compared to the circular ones. The superior optical performance is proved to result from longer effective n-electrode length in the case of the triangular mini-LEDs, which suppresses the self-heating effect and thus well preserves the internal quantum efficiency, whereas the light extraction efficiency and the heat dissipation for the triangular shape are not significantly increased for such small mesa sizes, unlike conventional broad-area LEDs. Meanwhile, the reduced voltage is revealed to stem from the decreased n-GaN resistance. Different than conventional LEDs, these findings therefore indicate that the effective n-electrode length matters substantially for the miniaturized-LEDs.
Open Access
High-quality energy-saving leds for lighting and displays
(2012) Tan, S. T.; Demir, Hilmi Volkan
Open Access
High-quality InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes
(IEEE, 2012) Yang, X.; Tan, S. T.; Demir, Hilmi Volkan; Sun, X. W.
Full visible range covering InP/ZnS core-shell nanocrystals with high photometric performance have been prepared. Making use of these nanocrystals, we demonstrate a white quantum dot LED with a high color rendering index of 91. © 2012 IEEE.
Open Access
A hole accelerator for InGaN/GaN light-emitting diodes
(AIP Publishing, 2014) Zhang, Z. H.; Liu, W.; Tan, S. T.; Ji, Y.; Wang, L.; Zhu, B.; Zhang, Y.; Lu, S.; Zhang, X.; Hasanov, N.; Sun, X. W.; Demir, Hilmi Volkan
The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. (C) 2014 AIP Publishing LLC.
Open Access
Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
(AIP Publishing, 2013) Ju, Z. G.; Liu, W.; Zhang, Z. H.; Tan, S. T.; Ji, Y.; Kyaw, Z. B.; Zhang, X. L.; Lu, S. P.; Zhang, Y. P.; Zhu, B.; Hasanov, N.; Sun, X. W.; Demir, Hilmi Volkan
InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm2, which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm2. © 2013 AIP Publishing LLC.
Open Access
Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
(IEEE, 2014) Yang, X.; Dev, K.; Wang, J.; Mutlugün, E.; Dang, C.; Zhao, Y.; Tan, S. T.; Sun, X. W.; Demir, Hilmi Volkan
We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs with a similar device structure.
Open Access
Nanocrystal optoelectronics for quality lighting and displays
(Optical Society of America, 2013) Tan, S. T.; Demir, Hilmi Volkan
We review the recent advances in color-conversion LEDs integrating nanophosphors of semiconductor quantum dots for quality lighting and displays in our group. © OSA 2013.
Open Access
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
(Optical Society of America, 2014-01-07) Kyaw, Z.; Zhang, Z. H.; Liu, W.; Tan, S. T.; Ju, Z. G.; Zhang, X. L.; Ji, Y.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, Hilmi Volkan
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n-GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device. (C) 2014 Optical Society of America
Open Access
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
(Optical Society of America, 2014) Zhang, Z. H.; W. L.; Tan, S. T.; Ju, Z.; Ji, Y.; Kyaw, Z.; Zhang, X.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, Hilmi Volkan
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs. (C) 2014 Optical Society of America
Open Access
On-chip mercury-free deep-uv light-emitting sources with ultrahigh germicidal efficiency
(Wiley-VCH Verlag GmbH & Co. KGaA, 2021-08-04) Sharma, Vijay Kumar; Tan, S. T.; Haiyang, Z.; Shendre, S.; Baum, A.; Chalvet, F.; Tirén, J.; Demir, Hilmi Volkan
In the current COVID-19 scenario, there is an urgent need for developing efficient and mercury-free deep-ultraviolet (deep-UV) light sources for disinfection applications. AlGaN-based light-emitting diodes (LEDs) may be considered as an alternative, but due to their inherent low efficiencies in the deep-UV spectral region, significant developments are required to address efficiency issues. Here, a mercury-free chip-size deep-UV light source is shown which is enabled by high-vacuum chip-scale cavity sealing overcoming the limitations of both mercury lamps and deep-UV LEDs. These deep-UV chips are cathodoluminescence based, in which a cavity is created with high vacuum integrity for efficient field-emission. These chips demonstrate optical output power ≥20 mW (efficiency ≈4%) and, owing to the spectral overlap of phosphor cathodoluminescence spectra and germicidal effectiveness curve, resulted in log 6 (99.9999%) germicidal efficiency. Additionally, these chips offer high reliability, “instant” ON/OFF capability, high operational lifetimes, and low-temperature dependence with complete design freedom.
Open Access
Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes
(Wiley-VCH Verlag, 2014) Yang, X.; Mutlugun, E.; Zhao, Y.; Gao, Y.; Leck, K. S.; Ma, Y.; Ke, L.; Tan, S. T.; Demir, Hilmi Volkan; Sun, X. W.
A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.