Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

Date

2014

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Source Title

Small

Print ISSN

1613-6810

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Publisher

Wiley-VCH Verlag

Volume

10

Issue

2

Pages

246 - 246

Language

English

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Abstract

A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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