Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes
Date
2014
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Small
Print ISSN
1613-6810
Electronic ISSN
Publisher
Wiley-VCH Verlag
Volume
10
Issue
2
Pages
246 - 246
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.