Browsing by Author "Christensen, D. H."
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Item Open Access High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation(A I P Publishing LLC, 1998-05-25) Ünlü, M. S.; Gökkavas, M.; Onat, B. M.; Ata, E.; Özbay, Ekmel; Mirin, R. P.; Knopp, K. J.; Bertness, K. A.; Christensen, D. H.High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.Item Open Access High-speed >90% quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 nm range(A I P Publishing LLC, 1999-02-22) Özbay, Ekmel; Kimukin, İ.; Bıyıklı, Necmi; Aytür, O.; Gökkavas, M.; Ulu, G.; Ünlü, M. S.; Mirin, R. P.; Bertness, K. A.; Christensen, D. H.We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from 835 to 795 nm while keeping the peak efficiencies above 90%. The maximum quantum efficiency was 92% at a resonance wavelength of 823 nm. The photodiode had an experimental setup-limited temporal response of 12 ps. When the system response is deconvolved, the 3 dB bandwidth corresponds to 50 GHz, which is in good agreement with our theoretical calculations.Item Open Access High-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communications(IEEE, 2001) Gökkavas, M.; Dosunmu, O.; Ünlü, M. S.; Ulu, G.; Mirin, R. P.; Christensen, D. H.; Özbay, EkmelIn this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.Item Open Access High-speed high-efficiency resonant cavity enhanced photodiodes(Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States, 1999) Özbay, Ekmel; Kimukin, I.; Bıyıklı, N.; Aytür, O.; Gökkavas, M.; Ulu, G.; Ünlü, M. S.; Mirin, R. P.; Bertness, K. A.; Christensen, D. H.; Towe, E.; Tuttle, G.In this paper, we review our research efforts on RCE high-speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature.Item Open Access High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes(IEEE, 1998) Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, EkmelWidely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.