High-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communications
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2001
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Abstract
In this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.
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IEEE Photonics Technology Letters
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IEEE
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High-speed optoelectronics, Photodetectors, Photodiodes, Pin diodes
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English