High-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communications

Date
2001
Advisor
Supervisor
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Co-Supervisor
Instructor
Source Title
IEEE Photonics Technology Letters
Print ISSN
1041-1135
Electronic ISSN
Publisher
IEEE
Volume
13
Issue
12
Pages
1349 - 1351
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
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Abstract

In this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.

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Keywords
High-speed optoelectronics, Photodetectors, Photodiodes, Pin diodes
Citation
Published Version (Please cite this version)