High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

Date
1998-05-25
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
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Publisher
A I P Publishing LLC
Volume
72
Issue
21
Pages
2727 - 2729
Language
English
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Abstract

High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.

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Published Version (Please cite this version)